Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
519 | 3 | TERAHERTZ//TERAHERTZ TIME DOMAIN SPECTROSCOPY//TERAHERTZ SPECTROSCOPY | 21306 |
1536 | 2 | PHOTODIODE//PHOTODETECTORS//ENGINEERING, ELECTRICAL & ELECTRONIC | 7706 |
21684 | 1 | ATSUGI ELECT COMMUN S FUNCT DEVICE DEV//02 MU M GATE FABRICATION TECHNIQUE//BILAYER PHOTORESIST | 433 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | ATSUGI ELECT COMMUN S FUNCT DEVICE DEV | address | 163767 | 1% | 75% | 3 |
2 | 02 MU M GATE FABRICATION TECHNIQUE | authKW | 72786 | 0% | 100% | 1 |
3 | BILAYER PHOTORESIST | authKW | 72786 | 0% | 100% | 1 |
4 | CAPACITANCE NONLINEARITY | authKW | 72786 | 0% | 100% | 1 |
5 | COMPOSITE TRIPLE BEAT CTB | authKW | 72786 | 0% | 100% | 1 |
6 | COMPUTATIONAL PRIMITIVES | authKW | 72786 | 0% | 100% | 1 |
7 | CURRENT MIRROR TECHNIQUES | authKW | 72786 | 0% | 100% | 1 |
8 | DIGITAL ARITHMETIC CIRCUITS | authKW | 72786 | 0% | 100% | 1 |
9 | DIRECT COUPLED FIELD EFFECT TRANSISTOR LOGIC DCFL | authKW | 72786 | 0% | 100% | 1 |
10 | ENHANCEMENT DEPLETION E D MESFETS | authKW | 72786 | 0% | 100% | 1 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 7756 | 77% | 0% | 333 |
2 | Physics, Applied | 629 | 26% | 0% | 114 |
3 | Telecommunications | 207 | 6% | 0% | 28 |
4 | Computer Science, Hardware & Architecture | 205 | 4% | 0% | 18 |
5 | Physics, Multidisciplinary | 17 | 5% | 0% | 20 |
6 | Computer Science, Software Engineering | 15 | 2% | 0% | 8 |
7 | Instruments & Instrumentation | 12 | 3% | 0% | 11 |
8 | Engineering, Manufacturing | 11 | 1% | 0% | 5 |
9 | Physics, Condensed Matter | 10 | 5% | 0% | 21 |
10 | Materials Science, Coatings & Films | 4 | 1% | 0% | 5 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | ATSUGI ELECT COMMUN S FUNCT DEVICE DEV | 163767 | 1% | 75% | 3 |
2 | GALLIUM ARSENIDE VLSI TECHNOL CHIPTEC | 72786 | 0% | 100% | 1 |
3 | LSI S PICAT SPECIF DESIGN TECHNOL | 72786 | 0% | 100% | 1 |
4 | RADIO COMMUN SYST S | 26464 | 0% | 18% | 2 |
5 | ATSUGI ELECT COMMUN | 6615 | 0% | 9% | 1 |
6 | YOKOSUKA ELECT COMMUN S | 4475 | 0% | 3% | 2 |
7 | PL MICROELECT | 3231 | 0% | 2% | 2 |
8 | ATSUGI | 2798 | 0% | 4% | 1 |
9 | AUTOMAT ANAL SYST | 2598 | 0% | 4% | 1 |
10 | MUSASHINO ELECT COMMUN PL ELE S | 2424 | 0% | 3% | 1 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | IEEE JOURNAL OF SOLID-STATE CIRCUITS | 37596 | 15% | 1% | 66 |
2 | ELECTRONICSWEEK | 22583 | 1% | 10% | 3 |
3 | IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCE | 17321 | 1% | 5% | 5 |
4 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 16113 | 14% | 0% | 59 |
5 | ELECTRON DEVICE LETTERS | 15461 | 2% | 3% | 8 |
6 | ISSCC DIGEST OF TECHNICAL PAPERS | 6613 | 0% | 5% | 2 |
7 | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 6090 | 8% | 0% | 33 |
8 | ELECTRONICS LETTERS | 5311 | 12% | 0% | 54 |
9 | REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES | 5170 | 2% | 1% | 7 |
10 | JOURNAL OF THE INSTITUTION OF ELECTRONIC AND RADIO ENGINEERS | 3964 | 1% | 2% | 3 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |