Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
521 | 3 | SILICON CARBIDE//4H SIC//SIC | 21253 |
695 | 2 | SILICON CARBIDE//4H SIC//SIC | 13432 |
22373 | 1 | MESFET//4H SIC MESFET//SIC MESFET | 407 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | MESFET | authKW | 2092133 | 27% | 24% | 111 |
2 | 4H SIC MESFET | authKW | 1243276 | 4% | 94% | 17 |
3 | SIC MESFET | authKW | 493136 | 3% | 58% | 11 |
4 | METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR | authKW | 395960 | 4% | 34% | 15 |
5 | SOI MESFET | authKW | 387180 | 1% | 100% | 5 |
6 | MAXIMUM OUTPUT POWER DENSITY | authKW | 322648 | 1% | 83% | 5 |
7 | DC TRANSCONDUCTANCE | authKW | 247794 | 1% | 80% | 4 |
8 | DRAIN SATURATION CURRENT | authKW | 247794 | 1% | 80% | 4 |
9 | L GATE | authKW | 232308 | 1% | 100% | 3 |
10 | DRAIN INDUCED BARRIER LOWERING EFFECT | authKW | 174230 | 1% | 75% | 3 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 4787 | 63% | 0% | 256 |
2 | Physics, Applied | 2004 | 45% | 0% | 185 |
3 | Physics, Condensed Matter | 1276 | 30% | 0% | 123 |
4 | Materials Science, Multidisciplinary | 377 | 24% | 0% | 97 |
5 | Materials Science, Characterization, Testing | 371 | 4% | 0% | 16 |
6 | Materials Science, Coatings & Films | 176 | 5% | 0% | 21 |
7 | Nanoscience & Nanotechnology | 166 | 8% | 0% | 32 |
8 | Physics, Multidisciplinary | 109 | 9% | 0% | 37 |
9 | Optics | 20 | 4% | 0% | 18 |
10 | Telecommunications | 18 | 2% | 0% | 10 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | EDUC MINIST WIDE BAND G SEMICOND MAT | 154872 | 0% | 100% | 2 |
2 | ENGN TECHNOL EAST GUILAN | 77436 | 0% | 100% | 1 |
3 | MOTILIAL NEHRU | 77436 | 0% | 100% | 1 |
4 | MSN 1G5 | 77436 | 0% | 100% | 1 |
5 | PHYS COMOPOSANTS SEMICOND | 77436 | 0% | 100% | 1 |
6 | PROC METROL | 77436 | 0% | 100% | 1 |
7 | PROGRAM MICROSCI TECHNOL | 77436 | 0% | 100% | 1 |
8 | RADIO CIME | 77436 | 0% | 100% | 1 |
9 | UNIV SCI ELECT SCI | 77436 | 0% | 100% | 1 |
10 | URA 837 | 77436 | 0% | 100% | 1 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | SOLID-STATE ELECTRONICS | 25215 | 14% | 1% | 57 |
2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 9955 | 11% | 0% | 45 |
3 | MATERIALS SCIENCE FORUM | 9001 | 11% | 0% | 45 |
4 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 3690 | 3% | 0% | 13 |
5 | SUPERLATTICES AND MICROSTRUCTURES | 3365 | 4% | 0% | 17 |
6 | JOURNAL OF COMPUTATIONAL ELECTRONICS | 3294 | 2% | 1% | 7 |
7 | IEEE ELECTRON DEVICE LETTERS | 2386 | 4% | 0% | 17 |
8 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 934 | 2% | 0% | 10 |
9 | CHINESE PHYSICS B | 879 | 3% | 0% | 11 |
10 | RECHERCHE AEROSPATIALE | 796 | 0% | 1% | 2 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |