Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
521 | 3 | SILICON CARBIDE//4H SIC//SIC | 21253 |
695 | 2 | SILICON CARBIDE//4H SIC//SIC | 13432 |
3228 | 1 | 4H SIC//CHANNEL MOBILITY//SILICON CARBIDE SIC | 2066 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | 4H SIC | authKW | 1109737 | 10% | 35% | 210 |
2 | CHANNEL MOBILITY | authKW | 410867 | 2% | 57% | 47 |
3 | SILICON CARBIDE SIC | authKW | 397799 | 5% | 26% | 101 |
4 | SIO2 SIC INTERFACE | authKW | 368252 | 1% | 93% | 26 |
5 | EDGE TERMINATION | authKW | 360084 | 2% | 54% | 44 |
6 | BIPOLAR JUNCTION TRANSISTORS BJTS | authKW | 280273 | 1% | 88% | 21 |
7 | JUNCTION TERMINATION EXTENSION JTE | authKW | 228798 | 1% | 100% | 15 |
8 | SILICON CARBIDE | authKW | 200016 | 12% | 5% | 250 |
9 | NO ANNEALING | authKW | 168957 | 1% | 92% | 12 |
10 | JUNCTION BARRIER SCHOTTKY JBS | authKW | 141969 | 1% | 85% | 11 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Physics, Applied | 12603 | 50% | 0% | 1037 |
2 | Engineering, Electrical & Electronic | 9498 | 40% | 0% | 836 |
3 | Materials Science, Characterization, Testing | 3337 | 5% | 0% | 107 |
4 | Materials Science, Multidisciplinary | 3061 | 29% | 0% | 600 |
5 | Materials Science, Coatings & Films | 2547 | 8% | 0% | 173 |
6 | Physics, Condensed Matter | 2032 | 18% | 0% | 372 |
7 | Nanoscience & Nanotechnology | 432 | 6% | 0% | 123 |
8 | Physics, Multidisciplinary | 216 | 6% | 0% | 132 |
9 | Optics | 68 | 4% | 0% | 81 |
10 | Electrochemistry | 4 | 1% | 0% | 22 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | NEW BRUNSWICK TECHNOL | 141969 | 1% | 85% | 11 |
2 | SIC | 132324 | 2% | 17% | 50 |
3 | POWER SEMICOND | 119609 | 1% | 39% | 20 |
4 | ULTRA LOW LOSS POWER DEVICE TECHNOL BODY | 109814 | 1% | 60% | 12 |
5 | NEW MAT DEVICES RD | 106773 | 0% | 100% | 7 |
6 | PGMICRO | 80125 | 1% | 31% | 17 |
7 | NEW BRUNSWICK TECH | 76266 | 0% | 100% | 5 |
8 | ADV MAT DEVICES NANOTECHNOL | 71563 | 1% | 18% | 26 |
9 | RD ASSOC | 61013 | 0% | 100% | 4 |
10 | SEMICOND POWER GRP | 61013 | 0% | 100% | 4 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | MATERIALS SCIENCE FORUM | 104578 | 17% | 2% | 345 |
2 | IEEE ELECTRON DEVICE LETTERS | 47333 | 8% | 2% | 170 |
3 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 36015 | 9% | 1% | 193 |
4 | SOLID-STATE ELECTRONICS | 15465 | 5% | 1% | 101 |
5 | APPLIED PHYSICS LETTERS | 4809 | 9% | 0% | 192 |
6 | JAPANESE JOURNAL OF APPLIED PHYSICS | 3813 | 3% | 0% | 65 |
7 | MICROELECTRONICS RELIABILITY | 3084 | 2% | 1% | 39 |
8 | MICROELECTRONIC ENGINEERING | 2652 | 2% | 0% | 43 |
9 | CHINESE PHYSICS B | 2268 | 2% | 0% | 40 |
10 | JOURNAL OF ELECTRONIC MATERIALS | 2192 | 2% | 0% | 39 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |