Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
| 389 | 2 | MICROCRYSTALLINE SILICON//JOURNAL OF NON-CRYSTALLINE SOLIDS//AMORPHOUS SILICON | 17376 |
| 16142 | 1 | SILANE PLASMA//SIH2//HYDROGENATED AMORPHOUS SILICON FILM | 697 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | SILANE PLASMA | authKW | 146490 | 1% | 36% | 9 |
| 2 | SIH2 | authKW | 123081 | 1% | 39% | 7 |
| 3 | HYDROGENATED AMORPHOUS SILICON FILM | authKW | 67822 | 0% | 50% | 3 |
| 4 | SIH3 | authKW | 67822 | 0% | 50% | 3 |
| 5 | RF PLASMA CHEMICAL VAPOR DEPOSITION | authKW | 60287 | 0% | 67% | 2 |
| 6 | VIRTUAL REACTOR | authKW | 60287 | 0% | 67% | 2 |
| 7 | HYDROGENATED AMORPHOUS SILICON | authKW | 54015 | 3% | 6% | 19 |
| 8 | PRIAM | address | 48225 | 1% | 27% | 4 |
| 9 | A SI H DEPOSITION PARAMETERS | authKW | 45216 | 0% | 100% | 1 |
| 10 | ABSOLUTE CH RADICAL DENSITY | authKW | 45216 | 0% | 100% | 1 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 3947 | 48% | 0% | 338 |
| 2 | Materials Science, Ceramics | 1799 | 10% | 0% | 72 |
| 3 | Materials Science, Coatings & Films | 1340 | 10% | 0% | 72 |
| 4 | Materials Science, Multidisciplinary | 536 | 22% | 0% | 154 |
| 5 | Physics, Atomic, Molecular & Chemical | 516 | 12% | 0% | 82 |
| 6 | Physics, Condensed Matter | 336 | 13% | 0% | 93 |
| 7 | Chemistry, Physical | 320 | 17% | 0% | 118 |
| 8 | Physics, Fluids & Plasmas | 179 | 4% | 0% | 31 |
| 9 | COMPUTER APPLICATIONS & CYBERNETICS | 65 | 0% | 0% | 2 |
| 10 | Physics, Multidisciplinary | 23 | 4% | 0% | 31 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | PRIAM | 48225 | 1% | 27% | 4 |
| 2 | CENT S SORA KU | 45216 | 0% | 100% | 1 |
| 3 | COUCHE MINCE INTER ES | 45216 | 0% | 100% | 1 |
| 4 | EDIFICI CAMPUS PATERNA | 45216 | 0% | 100% | 1 |
| 5 | ENGN ELECT ENGN SUMIYOSHI KU | 45216 | 0% | 100% | 1 |
| 6 | ENGN MAT SCI ENGN HIGASHI KU | 45216 | 0% | 100% | 1 |
| 7 | ESTIJOINT | 45216 | 0% | 100% | 1 |
| 8 | HIGH PERFORMANCE COMPUTAT DATABASES | 45216 | 0% | 100% | 1 |
| 9 | OFF MED DEVICES | 45216 | 0% | 100% | 1 |
| 10 | SID PHYS | 45216 | 0% | 100% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | JOURNAL OF NON-CRYSTALLINE SOLIDS | 9545 | 10% | 0% | 70 |
| 2 | JOURNAL OF APPLIED PHYSICS | 2891 | 12% | 0% | 84 |
| 3 | HIGH TEMPERATURE MATERIAL PROCESSES | 2605 | 1% | 1% | 6 |
| 4 | PLASMA CHEMISTRY AND PLASMA PROCESSING | 2440 | 1% | 1% | 9 |
| 5 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2048 | 5% | 0% | 38 |
| 6 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1615 | 3% | 0% | 21 |
| 7 | THIN SOLID FILMS | 1462 | 5% | 0% | 35 |
| 8 | SEMICONDUCTORS AND SEMIMETALS | 1362 | 1% | 1% | 4 |
| 9 | PLASMA SOURCES SCIENCE & TECHNOLOGY | 1265 | 1% | 0% | 9 |
| 10 | JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS | 1024 | 0% | 1% | 2 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |