Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
| 389 | 2 | MICROCRYSTALLINE SILICON//JOURNAL OF NON-CRYSTALLINE SOLIDS//AMORPHOUS SILICON | 17376 |
| 17530 | 1 | HOT WIRE CVD//HOT WIRE CHEMICAL VAPOR DEPOSITION//CAT CVD | 622 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | HOT WIRE CVD | authKW | 1208797 | 9% | 41% | 58 |
| 2 | HOT WIRE CHEMICAL VAPOR DEPOSITION | authKW | 1120638 | 9% | 42% | 53 |
| 3 | CAT CVD | authKW | 1067132 | 6% | 57% | 37 |
| 4 | CATALYTIC CHEMICAL VAPOR DEPOSITION | authKW | 680008 | 6% | 36% | 37 |
| 5 | SID PHYS DEVICES | address | 545972 | 4% | 43% | 25 |
| 6 | CATALYTIC CVD | authKW | 540441 | 4% | 44% | 24 |
| 7 | CHARGED NANOPARTICLES | address | 425362 | 3% | 44% | 19 |
| 8 | OPT TECHNOL LASER CONTROLLED PROC | address | 324278 | 1% | 80% | 8 |
| 9 | HWCVD | authKW | 278646 | 4% | 25% | 22 |
| 10 | FILAMENT DEGRADATION | authKW | 253344 | 1% | 100% | 5 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Materials Science, Coatings & Films | 16907 | 37% | 0% | 233 |
| 2 | Physics, Applied | 8256 | 72% | 0% | 450 |
| 3 | Materials Science, Multidisciplinary | 5217 | 63% | 0% | 394 |
| 4 | Physics, Condensed Matter | 3604 | 40% | 0% | 250 |
| 5 | Materials Science, Ceramics | 726 | 7% | 0% | 44 |
| 6 | Crystallography | 219 | 6% | 0% | 35 |
| 7 | Energy & Fuels | 97 | 5% | 0% | 31 |
| 8 | Nanoscience & Nanotechnology | 28 | 3% | 0% | 21 |
| 9 | Chemistry, Physical | 22 | 7% | 0% | 46 |
| 10 | Physics, Atomic, Molecular & Chemical | 14 | 3% | 0% | 20 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | SID PHYS DEVICES | 545972 | 4% | 43% | 25 |
| 2 | CHARGED NANOPARTICLES | 425362 | 3% | 44% | 19 |
| 3 | OPT TECHNOL LASER CONTROLLED PROC | 324278 | 1% | 80% | 8 |
| 4 | SUPER MAT | 121598 | 1% | 40% | 6 |
| 5 | MICROSTRUCT SCI MAT | 105318 | 3% | 12% | 17 |
| 6 | LCD YIELD ENHANCEMENT TEAM | 101338 | 0% | 100% | 2 |
| 7 | PHOTOVOLTAIK IEF 5 | 101338 | 0% | 100% | 2 |
| 8 | SUNGKYUN ADV NANO SCI TECHNOL SAINT | 101338 | 0% | 100% | 2 |
| 9 | ANAL PHYS AVANCEE NANOSTRUCT | 50669 | 0% | 100% | 1 |
| 10 | ATOM INTER E PHYS DEVICES | 50669 | 0% | 100% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | THIN SOLID FILMS | 60199 | 33% | 1% | 208 |
| 2 | SOLAR ENERGY MATERIALS AND SOLAR CELLS | 4613 | 4% | 0% | 27 |
| 3 | JOURNAL OF NON-CRYSTALLINE SOLIDS | 4200 | 7% | 0% | 44 |
| 4 | JOURNAL OF CRYSTAL GROWTH | 1708 | 5% | 0% | 33 |
| 5 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 980 | 4% | 0% | 25 |
| 6 | JAPANESE JOURNAL OF APPLIED PHYSICS | 762 | 3% | 0% | 16 |
| 7 | SOLID STATE PHENOMENA | 566 | 1% | 0% | 5 |
| 8 | JOURNAL OF APPLIED PHYSICS | 495 | 5% | 0% | 34 |
| 9 | KOREAN JOURNAL OF METALS AND MATERIALS | 451 | 0% | 0% | 3 |
| 10 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 401 | 2% | 0% | 10 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |