Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
| 1594 | 2 | POLYCRYSTALLINE SILICON//POLY SI//THIN FILM TRANSISTORS | 7411 |
| 35344 | 1 | FLASH LAMP ANNEALING//DEV ELECT EQUIPMENT//PULSED LIGHT SINTERING | 113 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | FLASH LAMP ANNEALING | authKW | 5826814 | 27% | 67% | 31 |
| 2 | DEV ELECT EQUIPMENT | address | 557824 | 2% | 100% | 2 |
| 3 | PULSED LIGHT SINTERING | authKW | 557824 | 2% | 100% | 2 |
| 4 | XEON FLASH LAMP | authKW | 557824 | 2% | 100% | 2 |
| 5 | FLASH LAMP ANNEALING FLA | authKW | 495839 | 4% | 44% | 4 |
| 6 | 3C SIC SI INTERFACE | authKW | 278912 | 1% | 100% | 1 |
| 7 | AUTOMATED COMMAND CONTROL | address | 278912 | 1% | 100% | 1 |
| 8 | DISCHARGE LOOP PARAMETERS | authKW | 278912 | 1% | 100% | 1 |
| 9 | DRTLETI | address | 278912 | 1% | 100% | 1 |
| 10 | ELECT MICROELECT NANOTECHNOL TECHNOL | address | 278912 | 1% | 100% | 1 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 1359 | 69% | 0% | 78 |
| 2 | Materials Science, Coatings & Films | 476 | 15% | 0% | 17 |
| 3 | Materials Science, Multidisciplinary | 344 | 40% | 0% | 45 |
| 4 | Physics, Condensed Matter | 194 | 23% | 0% | 26 |
| 5 | Materials Science, Characterization, Testing | 83 | 4% | 0% | 4 |
| 6 | Crystallography | 35 | 5% | 0% | 6 |
| 7 | Engineering, Electrical & Electronic | 17 | 10% | 0% | 11 |
| 8 | Engineering, Manufacturing | 8 | 2% | 0% | 2 |
| 9 | Instruments & Instrumentation | 8 | 4% | 0% | 4 |
| 10 | Mining & Mineral Processing | 6 | 1% | 0% | 1 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | DEV ELECT EQUIPMENT | 557824 | 2% | 100% | 2 |
| 2 | AUTOMATED COMMAND CONTROL | 278912 | 1% | 100% | 1 |
| 3 | DRTLETI | 278912 | 1% | 100% | 1 |
| 4 | ELECT MICROELECT NANOTECHNOL TECHNOL | 278912 | 1% | 100% | 1 |
| 5 | FEOL PROC DEV GRP 1ADV ULSI PROC ENGN 6 | 278912 | 1% | 100% | 1 |
| 6 | LASER PROD MKT | 278912 | 1% | 100% | 1 |
| 7 | LMPGINPG | 278912 | 1% | 100% | 1 |
| 8 | SAVOIE TECNOL | 278912 | 1% | 100% | 1 |
| 9 | SEMICONDUCT CO | 278912 | 1% | 100% | 1 |
| 10 | VARIED INNOVAT TECHNOL | 278912 | 1% | 100% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 1698 | 3% | 0% | 3 |
| 2 | THIN SOLID FILMS | 1087 | 11% | 0% | 12 |
| 3 | JAPANESE JOURNAL OF APPLIED PHYSICS | 822 | 6% | 0% | 7 |
| 4 | MATERIALS SCIENCE FORUM | 778 | 6% | 0% | 7 |
| 5 | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 694 | 2% | 0% | 2 |
| 6 | CURRENT APPLIED PHYSICS | 561 | 3% | 0% | 3 |
| 7 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 315 | 5% | 0% | 6 |
| 8 | JOURNAL OF CRYSTAL GROWTH | 311 | 5% | 0% | 6 |
| 9 | JOURNAL OF APPLIED PHYSICS | 248 | 9% | 0% | 10 |
| 10 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 203 | 3% | 0% | 3 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |