Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 64 | 3 | SEMICONDUCTOR LASERS//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 89567 |
| 26 | 2 | SUPERLATTICES AND MICROSTRUCTURES//QUANTUM WELLS//PHYSICS, CONDENSED MATTER | 34827 |
| 20744 | 1 | CAPACITANCE VOLTAGE C V PROFILING//ELECTRICITY PROPERTIES//ELECTROCHEMICAL C V PROFILING | 471 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | CAPACITANCE VOLTAGE C V PROFILING | authKW | 133827 | 0% | 100% | 2 |
| 2 | ELECTRICITY PROPERTIES | authKW | 133827 | 0% | 100% | 2 |
| 3 | ELECTROCHEMICAL C V PROFILING | authKW | 133827 | 0% | 100% | 2 |
| 4 | IRON IN GAAS | authKW | 133827 | 0% | 100% | 2 |
| 5 | ALAS GAAS VALENCE BAND OFFSET | authKW | 66914 | 0% | 100% | 1 |
| 6 | AUTOMATED EXPERIMENTAL EQUIPMENT | authKW | 66914 | 0% | 100% | 1 |
| 7 | BARE SI SYSTEM | authKW | 66914 | 0% | 100% | 1 |
| 8 | C V BANDGAP | authKW | 66914 | 0% | 100% | 1 |
| 9 | C V CHARGE PROFILING METHOD | authKW | 66914 | 0% | 100% | 1 |
| 10 | C V INTERCEPT | authKW | 66914 | 0% | 100% | 1 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 3789 | 57% | 0% | 269 |
| 2 | Physics, Condensed Matter | 1852 | 34% | 0% | 158 |
| 3 | Engineering, Electrical & Electronic | 1136 | 30% | 0% | 142 |
| 4 | Materials Science, Multidisciplinary | 198 | 17% | 0% | 82 |
| 5 | Materials Science, Coatings & Films | 131 | 4% | 0% | 20 |
| 6 | Nanoscience & Nanotechnology | 107 | 6% | 0% | 29 |
| 7 | Physics, Multidisciplinary | 40 | 6% | 0% | 28 |
| 8 | Instruments & Instrumentation | 30 | 3% | 0% | 16 |
| 9 | Metallurgy & Metallurgical Engineering | 16 | 3% | 0% | 14 |
| 10 | Electrochemistry | 10 | 2% | 0% | 9 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | ELE OPHYS MAT SCI | 66914 | 0% | 100% | 1 |
| 2 | ELECT COMP ENGN BONNER HALL | 66914 | 0% | 100% | 1 |
| 3 | FIS GLEB WATAGHING | 66914 | 0% | 100% | 1 |
| 4 | INTEGRATED LANDSC E ANAL MODELLING GRP | 66914 | 0% | 100% | 1 |
| 5 | INTEGRATED OPTOELECT SEMICOND REG | 66914 | 0% | 100% | 1 |
| 6 | PROC METROL MAT ENERGIA ENVIRONM LP2M2E | 66914 | 0% | 100% | 1 |
| 7 | SCI MATERIAUX ELECT | 66914 | 0% | 100% | 1 |
| 8 | LEIMN | 38234 | 0% | 29% | 2 |
| 9 | PHYS SPECT | 22303 | 0% | 33% | 1 |
| 10 | SOLID STATE ELE DIRECTORATE | 22303 | 0% | 33% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | SOLID-STATE ELECTRONICS | 5608 | 6% | 0% | 29 |
| 2 | SEMICONDUCTORS | 5520 | 5% | 0% | 24 |
| 3 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2634 | 4% | 0% | 18 |
| 4 | JOURNAL OF APPLIED PHYSICS | 2342 | 13% | 0% | 62 |
| 5 | APPLIED PHYSICS LETTERS | 2103 | 13% | 0% | 60 |
| 6 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 1675 | 4% | 0% | 20 |
| 7 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 1323 | 3% | 0% | 14 |
| 8 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1264 | 4% | 0% | 18 |
| 9 | IEEE ELECTRON DEVICE LETTERS | 1197 | 3% | 0% | 13 |
| 10 | RARE METAL MATERIALS AND ENGINEERING | 873 | 3% | 0% | 13 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |