Funded by:
Swedish Foundation for Strategic Research
24.2 MSEK for 5 years (2011-2016)
Principal Investigators:
Carl-Mikael Zetterling1, Anders Hallén1, Hans Norström2 and Mikael Östling1
1. KTH School for Information and Communication Technology
2. Uppsala University, Ångström Laboratory
“to boldly go where no electronics has gone before”
Main points:
- Demonstrating electronic systems at 600 °C using Silicon Carbide integrated circuits, with radiation hardness.
- A golden opportunity for electronics at much higher temperatures in entirely new system applications.
- KTH experience since 1992 in the field of SiC devices.
- Two demonstrators to be built.
The silicon carbide group is part of the department Integrated Devices and Circuits at the ICT-school. We conduct experimental research in the Electrum Laboratory in Kista. We are running this project in integrated electronics in SiC for high temperatures and radiation hard environments together with Uppsala University. The main goal of this project is to demonstrate power and sensor electronic systems up to 600 °C using silicon carbide (SiC) integrated circuits, also demonstrating radiation hardness. Applications can be found in oil and gas drilling, motor drives, automotive, aviation, space exploration, and nuclear energy.