Other SiC projects at KTH Integrated Devices and Circuits
Working on Venus
High Voltage Device Design in SiC
Project Leader: Prof. Mikael Östling
Recent publications
Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors
Hossein Elahipanah
KTH Doctoral Thesis, September 2017. (Fulltext downloadable on link)
Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes
Arash Salemi
KTH Doctoral Thesis, January 2017. (Fulltext downloadable on link)
500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits
Elahipanah, H., Kargarrazi, S., Salemi, A., Östling, M., and Zetterling, C.-M., IEEE Electron Device Letters, vol. 38, 2017.
A Comprehensive Study on the Geometrical Effects in High-Power 4H–SiC BJTs
Salemi, A., Elahipanah, H., Zetterling, C.-M., and Östling, M., IEEE Trans. Electron Devices, vol. 64, p. 882, 2017.
Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High-Voltage SiC BJTs and Darlington Transistors
Elahipanah, H., Salemi, A., Zetterling, C.-M., and Östling, M., IEEE Trans. Electron Devices, vol. 63, p. 4366, 2016.
Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs
Salemi, A., Elahipanah, H., Zetterling, C.-M., and Östling, M., IEEE Electron Device Letters, vol. 36, p. 1069, 2015.
Area- and Efficiency-Optimized Junction Termination for a 5.6 kV SiC BJT Process with Low On-Resistance
Salemi, A., Elahipanah, H., Malm, G., Zetterling, C.-M., and Östling, M., ISPSD 2015.
Conductivity Modulated On-Axis 4H-SiC 10+ kV Pin Diodes
Salemi, A., Elahipanah, H., Hallén, A., Malm, G., Zetterling, C.-M., and Östling, M., ISPSD 2015.
5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension
Elahipanah, H., Salemi, A., Zetterling, C.-M., and Östling, M.
IEEE Electron Device Letters, vol 36(2), pp. 168 – 170, 2015.
Implantation-Free 4H-SiC Bipolar Junction Transistor with Trenched Junction Termination Extension
Elahipanah, H., Salemi, A., Zetterling, C.-M., and Östling, M.
Materials Science Forum, vol 821-823, pp. 838 – 841, 2015.
Simulation study of the breakdown voltage in high voltage 4H-SiC BJT with respect to oxide and interface charges
Salemi, A., Elahipanah, H., Zetterling, C.-M., and Östling, M.
Materials Science Forum, vol 821-823, pp. 834 – 837, 2015.
Fabrication of 10 kV PiN Diodes Using On-Axis 4H-SiC
Salemi, A., Buono, B., Hallén, A., Hassan, J., Bergman, J.P., Zetterling, C.-M., and Östling, M.
Materials Science Forum, vol 778-780, pp. 836 – 839, 2014.
Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT
Salemi, A., Elahipanah, H., Buono, B., Zetterling, C.-M., Östling, M., Materials Science Forum, 740-742, p. 974, 2013.
Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Benedetto Buono
KTH Ph.D. Thesis, June 2012. (Fulltext downloadable on link)
Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors
Reza Ghandi
KTH Ph.D. Thesis, March 2011. (Fulltext downloadable on link)
Radiation hardness of SiC Devices
Project Leader: Prof. Anders Hallén
Recent publications
The Effect of Neutron Radiation on the Electrical Characteristics of 4H-SiC DMOSFETs
Kim, S.-S., Kang, M.-S., Hallen, A., Zetterling, C.-M., Jung, E.-S., Yang, C.-H., Choo, K.-N., Cho, M.-S., Koo, S.-M.
ECSCRM 2014
Radiation-Hard Dielectrics for 4H–SiC: A Comparison Between SiO2 and Al2O3
Usman, M. and Hallen, A.
IEEE Electron Device Letters, Vol. 32(12), pp. 1653 – 1655, 2011.
Impact of Ionizing Radiation on 4H-SiC Devices
Muhammad Usman
KTH Ph.D. Thesis, February 2012. (Fulltext downloadable on link)