Recent publications
500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits
Elahipanah, H., Kargarrazi, S., Salemi, A., Östling, M., and Zetterling, C.-M., IEEE Electron Device Letters, vol. 38, 2017.
SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K
Tian, Y., Hedayati, R., and Zetterling, C.-M., IEEE Trans. Electron Devices, vol. 64, p. 3588, 2017.
A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C
Tian, Y. and Zetterling, C.-M., IEEE Trans. Electron Devices, vol. 64, p. 2782, 2017.
High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology
Hedayati, R., Lanni, L., Shakir, M., Salemi, A., and Zetterling, C.-M., Materials Science Forum, 897, p. 681, 2017.
Total Dose Effects on 4H-SiC Bipolar Junction Transistors
Suvanam, S.S., Lanni, L., Malm, B.G., Zetterling, C.-M., and Hallén, A., Materials Science Forum, 897, p. 579, 2017.
High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits
Suvanam, S.S., Kuroki, S.I., Lanni, L., Hedayati, R., Ohshima, T., Makino, T., Hallén, A., and Zetterling, C.-M., IEEE Transactions on Nuclear Science, vol. 64, p. 852, 2017
Bipolar integrated circuits in SiC for extreme environment operation
Zetterling, C.-M., Hallen, A., Hedayati, R., Kargarrazi, S., Lanni, L., Malm, B.G., Mardani, S., Norstrom, H., Rusu, A., Suvanam, S.S., Tian, Y., and Östling, M., Semiconductor Science and Technology, vol. 32, p. 034002, 2017.
Material Aspects of Wide Temperature Range Amplifier Design in SiC Bipolar Technologies
Hedayati, R. and Zetterling, C.-M., Journal of Materials Research, vol. 31, p. 2928, 2016.
A 500 °C 8-b Digital-to-Analog Converter in Silicon Carbide Bipolar Technology
Hedayati, R., Lanni, L., Malm, B.G., Rusu, A., and Zetterling, C.-M., IEEE Trans. Electron Devices, vol. 63, p. 3445, 2016.
Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C
Tian, Y., Lanni, L., Rusu, A., and Zetterling, C.-M.
IEEE Transactions on Electron Devices, vol 63(6), pp. 2242 – 2247, 2016.
Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC
Hedayati, R., Lanni, L., Rusu, A., and Zetterling, C.-M.
IEEE Electron Device Letters, vol. 37, p. 146, 2016.
A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier
Kargarrazi, S., Lanni, L., and Zetterling, C.-M.
Solid-State Electronics, vol. 116, p. 33, 2016.
500 °C Bipolar SiC Linear Voltage Regulator
Kargarrazi, S., Lanni, L., Saggini, S., Rusu, A., and Zetterling, C.-M.
IEEE Transactions on Electron Devices, vol 62(6), pp. 1953 – 1957, 2015.
Integrated circuits in silicon carbide for high-temperature applications
Zetterling, C.-M.
MRS Bulletin, vol 40(5), pp. 431 – 438, 2015.
Influence of Passivation Oxide Thickness and Device Layout on the Current Gain of SiC BJTs
Lanni, L., Malm, B. G., Östling, M., and Zetterling, C.-M.
IEEE Electron Device Letters, vol 36(1), pp. 11 – 13, 2015.
Turning to history for high-temperature integrated circuits (87 MB, entire issue)
Zetterling, C.-M. and Lanni, L.
Compound Semiconductor, vol 21(1), pp. 50-54, 2015.
Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates
Suvanam, S.S., Lanni, L., Malm, B.G., Zetterling, C.-M., and Hallen, A.
IEEE Transactions on Nuclear Science, vol. 61, p. 1772, 2014.
A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology
Hedayati, R., Lanni, L., Rodriguez, S., Malm, B.G., Rusu, A., Zetterling, C.-M.
IEEE Electron Device Letters, vol 35(7), pp. 693 – 695, 2014.
Lateral p-n-p Transistors and Complementary SiC Bipolar Technology
Lanni, L., Malm, B.G., Östling, M., Zetterling, C.-M.
IEEE Electron Device Letters, vol 35(4), pp. 428 – 430, 2014.
A 4H-SiC Bipolar Technology for High-temperature Integrated Circuits
Lanni, L., Malm, B. G., Zetterling, C.-M., and Östling, M.
J. Microelectronics and Electronic Packaging, vol. 10(4), pp. 155 – 162, 2013.
500 °C Bipolar Integrated OR/NOR Gate in 4H-SiC
Lanni, L., Malm, B.G., Östling, M., Zetterling, C.-M.
IEEE Electron Device Letters, vol 34(9), pp. 1091 – 1093, 2013.
Silicon Carbide High Temperature Electronics – Is This Rocket Science?
Zetterling, C.-M.
Future Trends in Microelectronics: Frontiers and Innovations, ch. 7, p. 102
Edited by Luiryi, S., Xu, J. and Zaslavsky, A., John Wiley & Sons, 2013.
Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
Lanni, L., Ghandi, R., Malm, B.G., Zetterling, C.-M., Östling, M.
IEEE Transactions on Electron Devices, vol 59(4), pp. 1076 – 1083, 2012.
Future high temperature applications for SiC integrated circuits
Zetterling, C.-M., Lanni, L., Ghandi, R., Malm, B. G., and Östling, M.
Phys. Status Solidi C, vol. 9, pp. 1647 – 1650, 2012.
PhD and Licentiate theses
SiC Readout IC for High Temperature Seismic Sensor System
Ye Tian
KTH Doctoral Thesis, October 2017. (Fulltext downloadable on link)
High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology
Raheleh Hedayati
KTH Doctoral Thesis, September 2017. (Fulltext downloadable on link)
High Temperature Bipolar SiC Power Integrated Circuits
Saleh Kargarrazi
KTH Doctoral Thesis, March 2017. (Fulltext downloadable on link)
Radiation Hardness of 4H-SiC Devices and Circuits
Sethu Saveda Suvanam
KTH Doctoral Thesis, February 2017. (Fulltext downloadable on link)
Bipolar Silicon Carbide Integrated Circuits for High Temperature Power Applications
Saleh Kargarrazi
KTH Licentiate Thesis, December 2015. (Fulltext downloadable on link)
Silicon Carbide Bipolar Technology for High Temperature Integrated Circuits
Luigia Lanni
KTH Doctoral Thesis, June 2014. (Fulltext downloadable on link)
Silicon Carbide Sigma-Delta Modulator for High Temperature Applications
Ye Tian
KTH Licentiate Thesis, June 2014. (Fulltext downloadable on link)
Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications
Luigia Lanni
KTH Licentiate Thesis, February 2012. (Fulltext downloadable on link)