Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
| 1185 | 2 | OXYGEN PRECIPITATION//CZOCHRALSKI SILICON//THERMAL DONORS | 9644 |
| 23836 | 1 | PN JUNCTION LEAKAGE//IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE | 356 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | PN JUNCTION LEAKAGE | authKW | 199190 | 1% | 75% | 3 |
| 2 | IRRADIATED P N JUNCTION LEAKAGE | authKW | 177059 | 1% | 100% | 2 |
| 3 | JUNCTION SHAPE | authKW | 177059 | 1% | 100% | 2 |
| 4 | PHOTOELECTRIC MOSFET | authKW | 177059 | 1% | 100% | 2 |
| 5 | SI JUNCTION DIODES | authKW | 177059 | 1% | 100% | 2 |
| 6 | SILICON SUBSTRATE HARDENING | authKW | 177059 | 1% | 100% | 2 |
| 7 | SURFACE GENERATION VELOCITY | authKW | 177055 | 1% | 50% | 4 |
| 8 | 4H SIC DIODE | authKW | 88530 | 0% | 100% | 1 |
| 9 | ADJUSTMENT TECHNIQUE OF SPECTRUM BAND | authKW | 88530 | 0% | 100% | 1 |
| 10 | ALPHA AND BETA PARTICLES | authKW | 88530 | 0% | 100% | 1 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 2915 | 58% | 0% | 205 |
| 2 | Engineering, Electrical & Electronic | 2249 | 47% | 0% | 167 |
| 3 | Physics, Condensed Matter | 1653 | 36% | 0% | 129 |
| 4 | Materials Science, Coatings & Films | 414 | 8% | 0% | 29 |
| 5 | Electrochemistry | 221 | 7% | 0% | 26 |
| 6 | Instruments & Instrumentation | 104 | 6% | 0% | 22 |
| 7 | Materials Science, Multidisciplinary | 88 | 14% | 0% | 51 |
| 8 | Nuclear Science & Technology | 69 | 5% | 0% | 17 |
| 9 | Physics, Multidisciplinary | 18 | 5% | 0% | 18 |
| 10 | Physics, Nuclear | 13 | 3% | 0% | 9 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | ELECT ENGN EDINBURGH MICROFABRICAT IL | 88530 | 0% | 100% | 1 |
| 2 | ELECT ENGN ESAT INTEGRATED SYST | 88530 | 0% | 100% | 1 |
| 3 | ELECT ENGN ESAT S | 88530 | 0% | 100% | 1 |
| 4 | ENGN SOLID STATE ELECT | 88530 | 0% | 100% | 1 |
| 5 | RASTR OAO | 88530 | 0% | 100% | 1 |
| 6 | SEMICOND DEV S PROD DEV | 88530 | 0% | 100% | 1 |
| 7 | SHANGHAI MARINE ELECT EQUIPMENT | 88530 | 0% | 100% | 1 |
| 8 | SIMON FAIRCHILD | 88530 | 0% | 100% | 1 |
| 9 | STATE ENTERPRISE MICRODEVICES | 88530 | 0% | 100% | 1 |
| 10 | MAT PL SCI | 51393 | 2% | 10% | 6 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | SOLID-STATE ELECTRONICS | 31966 | 17% | 1% | 60 |
| 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 5743 | 9% | 0% | 32 |
| 3 | SOVIET MICROELECTRONICS | 4729 | 1% | 1% | 4 |
| 4 | SOLID STATE TECHNOLOGY | 2320 | 2% | 0% | 7 |
| 5 | REVISTA MEXICANA DE FISICA | 2204 | 3% | 0% | 9 |
| 6 | JOURNAL DE PHYSIQUE III | 2066 | 1% | 0% | 5 |
| 7 | MICROWAVES | 2057 | 0% | 2% | 1 |
| 8 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1630 | 7% | 0% | 24 |
| 9 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 1572 | 3% | 0% | 10 |
| 10 | IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1183 | 1% | 0% | 3 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |