Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
| 1185 | 2 | OXYGEN PRECIPITATION//CZOCHRALSKI SILICON//THERMAL DONORS | 9644 |
| 25292 | 1 | AG NANOCRYSTALLITES//ANALOG PROC TECHNOL GRP//CURRENT INDUCED DEFECT GENERATION | 309 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | AG NANOCRYSTALLITES | authKW | 101996 | 0% | 100% | 1 |
| 2 | ANALOG PROC TECHNOL GRP | address | 101996 | 0% | 100% | 1 |
| 3 | CURRENT INDUCED DEFECT GENERATION | authKW | 101996 | 0% | 100% | 1 |
| 4 | DISPLACIVE HYDROGEN ATOM MOTION | authKW | 101996 | 0% | 100% | 1 |
| 5 | ELE ON ELE OTECH | address | 101996 | 0% | 100% | 1 |
| 6 | ISOTHERMAL TRANSIENT IONIC CURRENT | authKW | 101996 | 0% | 100% | 1 |
| 7 | MOS ADMITTANCE | authKW | 101996 | 0% | 100% | 1 |
| 8 | PHOTO INDUCED DEFECT GENERATION | authKW | 101996 | 0% | 100% | 1 |
| 9 | PHYS SOLIDES GRP CNRS UNITE RECH 17 | address | 101996 | 0% | 100% | 1 |
| 10 | SILICIUM DIOXYDE | authKW | 101996 | 0% | 100% | 1 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Physics, Condensed Matter | 2939 | 51% | 0% | 157 |
| 2 | Physics, Applied | 471 | 27% | 0% | 83 |
| 3 | Engineering, Electrical & Electronic | 328 | 21% | 0% | 65 |
| 4 | Materials Science, Coatings & Films | 325 | 8% | 0% | 24 |
| 5 | Electrochemistry | 200 | 7% | 0% | 23 |
| 6 | Telecommunications | 89 | 5% | 0% | 16 |
| 7 | Physics, Multidisciplinary | 33 | 6% | 0% | 20 |
| 8 | Materials Science, Ceramics | 20 | 2% | 0% | 6 |
| 9 | Materials Science, Multidisciplinary | 15 | 9% | 0% | 27 |
| 10 | Engineering, General | 10 | 2% | 0% | 6 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | ANALOG PROC TECHNOL GRP | 101996 | 0% | 100% | 1 |
| 2 | ELE ON ELE OTECH | 101996 | 0% | 100% | 1 |
| 3 | PHYS SOLIDES GRP CNRS UNITE RECH 17 | 101996 | 0% | 100% | 1 |
| 4 | FRYAZINO BRANCH | 61390 | 6% | 3% | 18 |
| 5 | ELE ODYNAM PL PROBLEM | 50997 | 0% | 50% | 1 |
| 6 | HITACHI ADM | 50997 | 0% | 50% | 1 |
| 7 | ELECT ENGN SOLID STATE DEVICE | 33997 | 0% | 33% | 1 |
| 8 | RADIO ENGN ELECT | 24813 | 7% | 1% | 22 |
| 9 | SPINTRON NANOELECT | 20398 | 0% | 20% | 1 |
| 10 | RADIOTECH ELECT | 7844 | 0% | 8% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 65910 | 19% | 1% | 60 |
| 2 | SEMICONDUCTORS | 36738 | 16% | 1% | 50 |
| 3 | SOVIET MICROELECTRONICS | 8518 | 2% | 2% | 5 |
| 4 | JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 4518 | 4% | 0% | 12 |
| 5 | SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY | 2890 | 1% | 1% | 3 |
| 6 | SOLID-STATE ELECTRONICS | 2597 | 5% | 0% | 16 |
| 7 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1051 | 6% | 0% | 18 |
| 8 | INTERNATIONAL JOURNAL OF ELECTRONICS | 1005 | 2% | 0% | 7 |
| 9 | TECHNICAL PHYSICS LETTERS | 739 | 2% | 0% | 7 |
| 10 | REVUE DE PHYSIQUE APPLIQUEE | 692 | 1% | 0% | 3 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |