Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
596 | 3 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 14780 |
1398 | 2 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 8299 |
103 | 1 | RESISTIVE SWITCHING//RRAM//RESISTIVE RANDOM ACCESS MEMORY RRAM | 4457 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | authKW | 3947902 | 16% | 79% | 707 |
2 | RRAM | authKW | 1742723 | 7% | 84% | 295 |
3 | RESISTIVE RANDOM ACCESS MEMORY RRAM | authKW | 1058689 | 4% | 90% | 166 |
4 | RERAM | authKW | 934959 | 4% | 85% | 156 |
5 | RESISTANCE SWITCHING | authKW | 587942 | 3% | 72% | 115 |
6 | RESISTIVE RANDOM ACCESS MEMORY | authKW | 488212 | 2% | 85% | 81 |
7 | CONDUCTIVE FILAMENT | authKW | 421828 | 1% | 90% | 66 |
8 | RESISTIVE MEMORY | authKW | 403277 | 2% | 70% | 81 |
9 | RESISTIVE SWITCHING MEMORY | authKW | 269401 | 1% | 78% | 49 |
10 | CBRAM | authKW | 243046 | 1% | 90% | 38 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Physics, Applied | 50384 | 67% | 0% | 2988 |
2 | Nanoscience & Nanotechnology | 19041 | 23% | 0% | 1024 |
3 | Materials Science, Multidisciplinary | 10884 | 36% | 0% | 1609 |
4 | Engineering, Electrical & Electronic | 6091 | 23% | 0% | 1045 |
5 | Physics, Condensed Matter | 4403 | 18% | 0% | 804 |
6 | Materials Science, Coatings & Films | 1123 | 4% | 0% | 181 |
7 | Chemistry, Multidisciplinary | 581 | 10% | 0% | 463 |
8 | Chemistry, Physical | 518 | 10% | 0% | 463 |
9 | Physics, Multidisciplinary | 128 | 4% | 0% | 190 |
10 | Optics | 41 | 3% | 0% | 126 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | ELECT OPTOELECT | 146672 | 1% | 51% | 41 |
2 | WERKSTOFFE ELEKTROTECH 2 | 135739 | 1% | 41% | 47 |
3 | NANOFABRICAT NOVEL DEVICES INTEGRATED TECHN | 128491 | 1% | 45% | 40 |
4 | NANOFABRICAT NOVEL DEVICE INTEGRAT | 103867 | 1% | 57% | 26 |
5 | PETER GRUNBERG 7 | 101056 | 1% | 62% | 23 |
6 | MAT ELECT ENGN INFORMAT TECHNOL 2 | 96029 | 1% | 54% | 25 |
7 | ICEAM | 85118 | 0% | 71% | 17 |
8 | THIN FILM NANO TECH | 83710 | 0% | 79% | 15 |
9 | ITALIAN UNIV NANOELECT TEAM | 72899 | 0% | 54% | 19 |
10 | PL NANOION | 64266 | 0% | 91% | 10 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | IEEE ELECTRON DEVICE LETTERS | 73336 | 7% | 3% | 311 |
2 | APPLIED PHYSICS LETTERS | 28288 | 15% | 1% | 674 |
3 | ECS SOLID STATE LETTERS | 12261 | 1% | 7% | 25 |
4 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 11136 | 4% | 1% | 159 |
5 | JAPANESE JOURNAL OF APPLIED PHYSICS | 9434 | 3% | 1% | 150 |
6 | MICROELECTRONIC ENGINEERING | 9162 | 3% | 1% | 117 |
7 | NANOSCALE RESEARCH LETTERS | 7165 | 2% | 1% | 70 |
8 | NANOTECHNOLOGY | 7053 | 3% | 1% | 120 |
9 | ADVANCED ELECTRONIC MATERIALS | 6898 | 0% | 4% | 22 |
10 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 6545 | 0% | 6% | 15 |
Author Key Words |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass | LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | 3947902 | 16% | 79% | 707 | Search RESISTIVE+SWITCHING | Search RESISTIVE+SWITCHING |
2 | RRAM | 1742723 | 7% | 84% | 295 | Search RRAM | Search RRAM |
3 | RESISTIVE RANDOM ACCESS MEMORY RRAM | 1058689 | 4% | 90% | 166 | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM |
4 | RERAM | 934959 | 4% | 85% | 156 | Search RERAM | Search RERAM |
5 | RESISTANCE SWITCHING | 587942 | 3% | 72% | 115 | Search RESISTANCE+SWITCHING | Search RESISTANCE+SWITCHING |
6 | RESISTIVE RANDOM ACCESS MEMORY | 488212 | 2% | 85% | 81 | Search RESISTIVE+RANDOM+ACCESS+MEMORY | Search RESISTIVE+RANDOM+ACCESS+MEMORY |
7 | CONDUCTIVE FILAMENT | 421828 | 1% | 90% | 66 | Search CONDUCTIVE+FILAMENT | Search CONDUCTIVE+FILAMENT |
8 | RESISTIVE MEMORY | 403277 | 2% | 70% | 81 | Search RESISTIVE+MEMORY | Search RESISTIVE+MEMORY |
9 | RESISTIVE SWITCHING MEMORY | 269401 | 1% | 78% | 49 | Search RESISTIVE+SWITCHING+MEMORY | Search RESISTIVE+SWITCHING+MEMORY |
10 | CBRAM | 243046 | 1% | 90% | 38 | Search CBRAM | Search CBRAM |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |