Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
1116 | 2 | SILICON OXYNITRIDE//BORON PENETRATION//SILICON NITRIDE | 10021 |
9128 | 1 | SIEMENS PROCESS//INORGAN CHEM GRP//EPITAXIAL REACTOR | 1215 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | SIEMENS PROCESS | authKW | 129691 | 0% | 100% | 5 |
2 | INORGAN CHEM GRP | address | 82854 | 2% | 15% | 21 |
3 | EPITAXIAL REACTOR | authKW | 77814 | 0% | 100% | 3 |
4 | MOCVD REACTOR | authKW | 77814 | 0% | 100% | 3 |
5 | PLANETARY REACTOR | authKW | 69166 | 0% | 67% | 4 |
6 | JOURNAL OF CRYSTAL GROWTH | journal | 67139 | 23% | 1% | 285 |
7 | CVD REACTOR | authKW | 66691 | 0% | 43% | 6 |
8 | PARASITIC DEPOSITION | authKW | 58359 | 0% | 75% | 3 |
9 | EPITAXIAL SILICON TECHNOL | address | 51876 | 0% | 100% | 2 |
10 | INORGANIC RINGS AND CLUSTERS | authKW | 51876 | 0% | 100% | 2 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Crystallography | 12004 | 27% | 0% | 326 |
2 | Physics, Applied | 5492 | 44% | 0% | 531 |
3 | Materials Science, Coatings & Films | 4784 | 15% | 0% | 177 |
4 | Materials Science, Multidisciplinary | 3207 | 37% | 0% | 454 |
5 | Electrochemistry | 1536 | 10% | 0% | 123 |
6 | Engineering, Chemical | 798 | 12% | 0% | 145 |
7 | Physics, Condensed Matter | 272 | 10% | 0% | 120 |
8 | Thermodynamics | 254 | 4% | 0% | 52 |
9 | Engineering, Mechanical | 145 | 4% | 0% | 54 |
10 | Physics, Multidisciplinary | 138 | 7% | 0% | 80 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | INORGAN CHEM GRP | 82854 | 2% | 15% | 21 |
2 | EPITAXIAL SILICON TECHNOL | 51876 | 0% | 100% | 2 |
3 | TOURISM DESIGN | 51876 | 0% | 100% | 2 |
4 | FUNDAMENTAL SCI DEF WIDE BAND G SE | 34583 | 0% | 67% | 2 |
5 | DIPARTIMENTO CHIM FIS PLICATA | 31233 | 1% | 12% | 10 |
6 | NANOELE SYST INFORMAT TECHNOL | 29177 | 0% | 38% | 3 |
7 | AUTOMOBILE HI TECH | 25938 | 0% | 100% | 1 |
8 | CANMET MET TECHNOL S | 25938 | 0% | 100% | 1 |
9 | CHEM OPTOELECT MAT CHEM | 25938 | 0% | 100% | 1 |
10 | CNRS URA 1109 LMGP | 25938 | 0% | 100% | 1 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 67139 | 23% | 1% | 285 |
2 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 9920 | 9% | 0% | 109 |
3 | JOURNAL DE PHYSIQUE IV | 5978 | 4% | 0% | 49 |
4 | CRYSTAL RESEARCH AND TECHNOLOGY | 2626 | 2% | 0% | 26 |
5 | CHEMICAL VAPOR DEPOSITION | 2590 | 1% | 1% | 10 |
6 | KAGAKU KOGAKU RONBUNSHU | 2517 | 2% | 0% | 21 |
7 | REVUE INTERNATIONALE DES HAUTES TEMPERATURES ET DES REFRACTAIRES | 1997 | 0% | 2% | 4 |
8 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 1741 | 1% | 1% | 10 |
9 | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1603 | 1% | 1% | 10 |
10 | PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1436 | 0% | 1% | 6 |
Author Key Words |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass | LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SIEMENS PROCESS | 129691 | 0% | 100% | 5 | Search SIEMENS+PROCESS | Search SIEMENS+PROCESS |
2 | EPITAXIAL REACTOR | 77814 | 0% | 100% | 3 | Search EPITAXIAL+REACTOR | Search EPITAXIAL+REACTOR |
3 | MOCVD REACTOR | 77814 | 0% | 100% | 3 | Search MOCVD+REACTOR | Search MOCVD+REACTOR |
4 | PLANETARY REACTOR | 69166 | 0% | 67% | 4 | Search PLANETARY+REACTOR | Search PLANETARY+REACTOR |
5 | CVD REACTOR | 66691 | 0% | 43% | 6 | Search CVD+REACTOR | Search CVD+REACTOR |
6 | PARASITIC DEPOSITION | 58359 | 0% | 75% | 3 | Search PARASITIC+DEPOSITION | Search PARASITIC+DEPOSITION |
7 | INORGANIC RINGS AND CLUSTERS | 51876 | 0% | 100% | 2 | Search INORGANIC+RINGS+AND+CLUSTERS | Search INORGANIC+RINGS+AND+CLUSTERS |
8 | LPCVD FURNACE | 51876 | 0% | 100% | 2 | Search LPCVD+FURNACE | Search LPCVD+FURNACE |
9 | MULTIWAFER REACTOR | 51876 | 0% | 100% | 2 | Search MULTIWAFER+REACTOR | Search MULTIWAFER+REACTOR |
10 | RING AND CLUSTER COMPOUNDS | 51876 | 0% | 100% | 2 | Search RING+AND+CLUSTER+COMPOUNDS | Search RING+AND+CLUSTER+COMPOUNDS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |