Publications by Carl-Mikael Zetterling
Refereegranskade
Artiklar
[1]
A. Metreveli et al., "In Situ Gamma Irradiation Effects on 4H-SiC Bipolar Junction Transistors," IEEE Transactions on Nuclear Science, vol. 70, no. 12, pp. 2597-2604, 2023.
[2]
M. Ekström and C.-M. Zetterling, "Self-aligned contacts to ion implanted S/D regions in 4H-SiC," Materials Science in Semiconductor Processing, vol. 168, 2023.
[3]
S. Hou et al., "A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 degrees C," IEEE Journal of the Electron Devices Society, vol. 8, no. 1, pp. 116-121, 2020.
[4]
D. Mukherjee et al., "Deposition of diamond films on single crystalline silicon carbide substrates," Diamond and related materials, vol. 101, 2020.
[5]
S. Kargarrazi et al., "500 degrees C SiC PWM Integrated Circuit," IEEE transactions on power electronics, vol. 34, no. 3, pp. 1997-2001, 2019.
[6]
M. Shakir et al., "555-Timer and Comparators Operational at 500 degrees C," IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3734-3739, 2019.
[7]
S. Hou et al., "A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode," IEEE Electron Device Letters, vol. 40, no. 1, pp. 51-54, 2019.
[8]
M. Ekström, B. G. Malm and C.-M. Zetterling, "High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators," IEEE Electron Device Letters, vol. 40, no. 5, pp. 670-673, 2019.
[9]
M. Ekström, A. Ferrario and C.-M. Zetterling, "Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide," Journal of Electronic Materials, vol. 48, no. 4, pp. 2509-2516, 2019.
[10]
S. Roy et al., "Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning," IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3764-3770, 2019.
[11]
M. Shakir et al., "Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications," Electronics, vol. 8, no. 5, 2019.
[12]
A. Salemi et al., "15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain," IEEE Electron Device Letters, vol. 39, no. 1, pp. 63-66, 2018.
[13]
S. Kargarrazi et al., "500 °c, High Current Linear Voltage Regulator in 4H-SiC BJT Technology," IEEE Electron Device Letters, vol. 39, no. 4, pp. 548-551, 2018.
[14]
M. Shakir et al., "A 600 degrees C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology," IEEE Electron Device Letters, vol. 39, no. 10, pp. 1540-1543, 2018.
[15]
T. Kurose et al., "Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics," Materials Science Forum, vol. 924, pp. 971-974, 2018.
[16]
S. Hou et al., "Scaling and modeling of high temperature 4H-SiC p-i-n photodiodes," IEEE Journal of the Electron Devices Society, vol. 6, no. 1, pp. 139-145, 2018.
[17]
H. Elahipanah et al., "500 degrees C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits," IEEE Electron Device Letters, vol. 38, no. 10, pp. 1429-1432, 2017.
[18]
Y. Tian and C.-M. Zetterling, "A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C," IEEE Transactions on Electron Devices, vol. 64, no. 7, pp. 2782-2788, 2017.
[19]
H. Elahipanah et al., "A Wafer-Scale Self-Aligned Ni-Silicide (SALICIDE) Low-Ohmic Contact Technology on n-type 4H-SiC," ECS Journal of Solid State Science and Technology, vol. 6, no. 4, pp. 197-200, 2017.
[20]
H. Elahipanah et al., "A wafer-scale Ni-salicide contact technology on n-type 4H-SiC," ECS Journal of Solid State Science and Technology, vol. 6, no. 4, pp. P197-P200, 2017.
[21]
C.-M. Zetterling et al., "Bipolar integrated circuits in SiC for extreme environment operation," Semiconductor Science and Technology, vol. 32, no. 3, 2017.
[22]
A. Nathan, P. Pavan and C.-M. Zetterling, "Editorial EIC," IEEE Journal of the Electron Devices Society, vol. 5, no. 3, pp. 147-148, 2017.
[23]
R. Hedayati et al., "High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology," Materials Science Forum, vol. 897, pp. 681-684, 2017.
[24]
Y. Tian and C.-M. Zetterling, "High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology," Solid-State Electronics, vol. 135, pp. 65-70, 2017.
[25]
M. Ekström et al., "Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide," Journal of Electronic Materials, vol. 46, no. 7, pp. 4478-4484, 2017.
[26]
Y. Tian, R. Hedayati and C.-M. Zetterling, "SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K," IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3588-3594, 2017.
[27]
S. Hou et al., "550 degrees C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization," IEEE Electron Device Letters, vol. 37, no. 12, pp. 1594-1596, 2016.
[28]
R. Hedayati et al., "A 500 degrees C 8-b Digital-to-Analog Converter in Silicon Carbide Bipolar Technology," IEEE Transactions on Electron Devices, vol. 63, no. 9, pp. 3445-3450, 2016.
[29]
Y. Tian et al., "A 500 °C monolithic SiC BJT latched comparator," Materials Science Forum, vol. 858, pp. 921-924, 2016.
[30]
A. Salemi et al., "A Comprehensive Study on the Geometrical Effects in High Power 4H-SiC BJTs," IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 882-887, 2016.
[31]
S. Kargarrazi, L. Lanni and C.-M. Zetterling, "A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier," Solid-State Electronics, vol. 116, pp. 33-37, 2016.
[32]
S. S. Suvanam et al., "High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits," IEEE Transactions on Nuclear Science, 2016.
[33]
H. Elahipanah et al., "Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High Voltage SiC BJTs and Darlington Transistors," IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4366-4372, 2016.
[34]
R. Hedayati and C.-M. Zetterling, "Material aspects of wide temperature range amplifier design in SiC bipolar technologies," Journal of Materials Research, vol. 31, no. 19, pp. 2928-2935, 2016.
[35]
Y. Tian et al., "Silicon Carbide fully differential amplifier characterized up to 500 °C," IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2242-2247, 2016.
[36]
R. Hedayati et al., "Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC," IEEE Electron Device Letters, vol. 37, no. 2, pp. 146-149, 2016.
[37]
H. Elahipanah et al., "4.5-kV 20-mΩ. cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension," Materials Science Forum, vol. 821, pp. 838-841, 2015.
[38]
H. Elahipanah et al., "5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension," IEEE Electron Device Letters, vol. 36, no. 2, pp. 168-170, 2015.
[39]
S. Kargarrazi et al., "500 degrees C Bipolar SiC Linear Voltage Regulator," IEEE Transactions on Electron Devices, vol. 62, no. 6, pp. 1953-1957, 2015.
[40]
S. Kargarrazi, L. Lanni and C.-M. Zetterling, "Design and characterization of 500°c schmitt trigger in 4H-SiC," Materials Science Forum, vol. 821-823, pp. 897-901, 2015.
[41]
L. Lanni et al., "ECL-based SiC logic circuits for extreme temperatures," Materials Science Forum, vol. 821-823, pp. 910-913, 2015.
[42]
L. Lanni et al., "Influence of Passivation Oxide Thickness and Device Layout on the Current Gain of SiC BJTs," IEEE Electron Device Letters, vol. 36, no. 1, pp. 11-13, 2015.
[43]
C.-M. Zetterling, "Integrated circuits in silicon carbide for high-temperature applications," MRS bulletin, vol. 40, no. 5, pp. 431-438, 2015.
[44]
A. Salemi et al., "Investigation of the breakdown voltage in high voltage 4H-SiC BJT with respect to oxide and interface charges," Materials Science Forum, vol. 821-823, pp. 834-837, 2015.
[45]
A. Salemi et al., "Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs," IEEE Electron Device Letters, vol. 36, no. 10, pp. 1069-1072, 2015.
[46]
H. Fashandi et al., "Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti," Scripta Materialia, vol. 99, pp. 53-56, 2015.
[47]
K. Smedfors, C.-M. Zetterling and M. Östling, "Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC," Materials Science Forum, vol. 821-823, pp. 440-443, 2015.
[48]
S. S. Suvanam et al., "Tailoring the interface between dielectric and 4H-SiC by ion implantation," Materials Science Forum, vol. 821-823, pp. 488-491, 2015.
[49]
R. Hedayati et al., "A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology," IEEE Electron Device Letters, vol. 35, no. 7, pp. 693-695, 2014.
[50]
J. Xia et al., "Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor," Materials Science Forum, vol. 778-780, pp. 549-552, 2014.
[51]
K. Smedfors et al., "Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from-40 degrees C to 500 degrees C," Materials Science Forum, vol. 778-780, pp. 681-684, 2014.
[52]
S. S. Suvanam et al., "Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates," IEEE Transactions on Nuclear Science, vol. 61, no. 4, pp. 1772-1776, 2014.
[53]
A. Salemi et al., "Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC," Materials Science Forum, vol. 778-780, pp. 836-840, 2014.
[54]
L. Lanni et al., "Lateral p-n-p Transistors and Complementary SiC Bipolar Technology," IEEE Electron Device Letters, vol. 35, no. 4, pp. 428-430, 2014.
[55]
L. Lanni et al., "SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs," Materials Science Forum, vol. 778-780, pp. 1005-1008, 2014.
[56]
L. Lanni et al., "500 degrees C Bipolar Integrated OR/NOR Gate in 4H-SiC," IEEE Electron Device Letters, vol. 34, no. 9, pp. 1091-1093, 2013.
[57]
L. Lanni et al., "A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits," Journal of Microelectronics and Electronic Packaging, vol. 10, no. 4, pp. 155-162, 2013.
[58]
A. Salemi et al., "Area-optimized JTE simulations for 4.5 kV non ion-implanted sic BJT," Materials Science Forum, vol. 740-742, pp. 974-977, 2013.
[59]
L. Lanni et al., "High-temperature characterization of 4H-SiC darlington transistors for low voltage applications," Materials Science Forum, vol. 740-742, pp. 966-969, 2013.
[60]
H. Elahipanah et al., "Process variation tolerant 4H-SiC power devices utilizing trench structures," Materials Science Forum, vol. 740-742, pp. 809-812, 2013.
[61]
L. Lanni et al., "Bipolar integrated OR-NOR gate in 4H-SiC," Materials Science Forum, vol. 717-720, pp. 1257-1260, 2012.
[62]
L. Lanni et al., "Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC," IEEE Transactions on Electron Devices, vol. 59, no. 4, pp. 1076-1083, 2012.
[63]
C.-M. Zetterling et al., "Future high temperature applications for SiC integrated circuits," Physica Status Solidi. C, Current topics in solid state physics, vol. 9, no. 7, pp. 1647-1650, 2012.
[64]
K. Buchholt et al., "Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)," Journal of Crystal Growth, vol. 343, no. 1, pp. 133-137, 2012.
[65]
B. Buono et al., "Investigation of Current Gain Degradation in 4H-SiC Power BJTs," Materials Science Forum, vol. 717-720, pp. 1131-1134, 2012.
[66]
J. -. Lee et al., "Local anodic oxidation of phosphorus-implanted 4H-SiC by atomic force microscopy," Materials Science Forum, vol. 717-720, pp. 905-908, 2012.
[67]
M. -. Kang et al., "Metal work-function and doping-concentration dependent barrier height of Ni-contacts to 4H-SiC with metal-embedded nano-particles," Materials Science Forum, vol. 717-720, pp. 857-860, 2012.
[68]
B. Buono et al., "Current Gain Degradation in 4H-SiC Power BJTs," Materials Science Forum, vol. 679-680, pp. 702-705, 2011.
[69]
R. Ghandi et al., "High Voltage (2.8 kV) Implantation-free 4H-SiC BJTs with Long-TermStability of the Current Gain," IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2665-2669, 2011.
[70]
R. Ghandi et al., "High Voltage, Low On-resistance 4H-SiC BJTs with Improved Junction Termination Extension," Materials Science Forum, vol. 679-680, pp. 706-709, 2011.
[71]
L. Lanni et al., "Measurements and simulations of lateral PNP transistors in a SiC NPN BJT technology for high temperature integrated circuits," Materials Science Forum, vol. 679-680, pp. 758-761, 2011.
[72]
B. Buono et al., "Modeling and Characterization of the ON-Resistance in 4H-SiC Power BJTs," IEEE Transactions on Electron Devices, vol. 58, no. 7, pp. 2081-2087, 2011.
[73]
K. Buchholt et al., "Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide," Applied Physics Letters, vol. 98, no. 4, pp. 042108, 2011.
[74]
R. Ghandi et al., "Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation," IEEE Electron Device Letters, vol. 32, no. 5, pp. 596-598, 2011.
[75]
R. Ghandi et al., "Surface-passivation effects on the performance of 4H-SiC BJTs," IEEE Transactions on Electron Devices, vol. 58, pp. 259-265, 2011.
[76]
R. Esteve et al., "Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures," Journal of the Electrochemical Society, vol. 5, no. 158, pp. 496-501, 2011.
[77]
R. Esteve et al., "Comparative study of thermal oxides and post-oxidized depositedoxides on n-type free standing 3C-SiC," Materials Science Forum, vol. 645-648, pp. 829-832, 2010.
[78]
R. Ghandi et al., "Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs," Materials Science Forum, vol. 645-648, no. Part 1-2, pp. 661-664, 2010.
[79]
B. Buono et al., "Influence of Emitter Width and Emitter-Base Distance on the Current Gain in 4H-SiC Power BJTs," IEEE Transactions on Electron Devices, vol. 57, no. 10, pp. 2664-2670, 2010.
[80]
B. Buono et al., "Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs," IEEE Transactions on Electron Devices, vol. 57, no. 3, pp. 704-711, 2010.
[81]
B. Buono et al., "Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs," Materials Science Forum, vol. 645-648, pp. 1061-1064, 2010.
[82]
H.-S. Lee et al., "1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance," Materials Science Forum, vol. 600-603, pp. 1151-1154, 2009.
[83]
K. G. P. Eriksson et al., "A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors," Materials Science Forum, vol. 600-603, pp. 1171-1174, 2009.
[84]
R. Esteve et al., "Advanced oxidation process combining oxide deposition and short postoxidation step for N-type 3C- and 4H-SiC," Journal of Applied Physics, vol. 106, no. 4, 2009.
[85]
R. Ghandi et al., "Backside Nickel Based Ohmic Contacts to n-type Silicon Carbide," Materials Science Forum, vol. 600-603, pp. 635-638, 2009.
[86]
R. Esteve et al., "Comparative study of thermally grown oxides on n-type free standing 3C-SiC (001)," Journal of Applied Physics, vol. 106, no. 4, 2009.
[87]
R. Ghandi et al., "High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension," IEEE Electron Device Letters, vol. 30, no. 11, pp. 1170-1172, 2009.
[88]
R. Ghandi et al., "Implantation-Free Low on-resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability," Materials Science Forum, vol. 615-617, pp. 833-836, 2009.
[89]
B. Buono et al., "Simulations of Open Emitter Breakdown Voltage in SiC BJTs with non Implanted JTE," Materials Science Forum, vol. 615-617, pp. 841-844, 2009.
[90]
R. Ghandi et al., "Fabrication of 2700-v 12-m Omega center dot cm(2) non ion-implanted 4H-SiC BJTs with common-emitter current gain of 50," IEEE Electron Device Letters, vol. 29, no. 10, pp. 1135-1137, 2008.
[91]
H.-S. Lee et al., "High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE," IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1894-1898, 2008.
[92]
H.-S. Lee et al., "Low-forward-voltage-drop 4H-SiC BJTs without base contact implantation," IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1907-1911, 2008.
[93]
H.-S. Lee et al., "Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors," Applied Physics Letters, vol. 92, no. 8, pp. 082113-1-082113-3, 2008.
[94]
H.-S. Lee et al., "1200-V 5.2-m Omega center dot cm(2) 4H-SiC BJTs with a high common-emitter current gain," IEEE Electron Device Letters, vol. 28, no. 11, pp. 1007-1009, 2007.
[95]
H.-S. Lee et al., "4H-SiC power BJTs with high current gain and low on-resistance," Materials Science Forum, vol. 556-557, pp. 767-770, 2007.
[96]
H.-S. Lee et al., "A comparative study of surface passivation on SiC BJTs with high current gain," Materials Science Forum, vol. 556-557, pp. 631-634, 2007.
[97]
M. Domeij et al., "Current gain dependence on emitter width in 4H-SiC BJTs," Materials Science Forum, vol. 527-529, pp. 1425-1428, 2006.
[98]
H.-S. Lee et al., "Investigation of TiW contacts to 4H-SiC bipolar junction devices," Materials Science Forum, vol. 527-529, pp. 887-890, 2006.
[99]
E. Danielsson et al., "A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer," Materials Science Forum, vol. 483-485, pp. 905-908, 2005.
[100]
M. Domeij et al., "Current gain of 4H-SiC bipolar transistors including the effect of interface states," Materials Science Forum, vol. 483, pp. 889-892, 2005.
[101]
H.-S. Lee et al., "Electrical characteristics of 4H-SiC BJTs at elevated temperatures," Materials Science Forum, vol. 483-485, pp. 897-900, 2005.
[102]
M. Domeij et al., "Geometrical effects in high current gain 1100-V 4H-SiC BJTs," IEEE Electron Device Letters, vol. 26, no. 10, pp. 743-745, 2005.
[103]
E. Danielsson et al., "Extrinsic base design of SiC bipolar transistors," Materials Science Forum, vol. 457-460, no. II, pp. 1117-1120, 2004.
[104]
M. Östling et al., "Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices," Thin Solid Films, vol. 469-70, pp. 444-449, 2004.
[105]
W. Liu et al., "High frequency measurements and simulations of SiC MESFETs up to 250 degrees C," Materials Science Forum, vol. 457-460, pp. 1209-1212, 2004.
[106]
S.-M. Koo et al., "SiC JMOSFETs for high-temperature stable circuit operation," Materials Science Forum, vol. 457-460, pp. 1445-1448, 2004.
[107]
H.-S. Lee et al., "Simulation study of 4H-SiC junction-gated MOSFETs from 300 K to 773 K," Materials Science Forum, vol. 457-460, pp. 1437-1440, 2004.
[108]
M. Östling et al., "Thin films in silicon carbide semiconductor devices," Proceedings of SPIE, the International Society for Optical Engineering, vol. 5774, pp. 5-10, 2004.
[109]
S. M. Koo et al., "Combination of JFET and MOSFET devices in 4H-SiC for high-temperature stable circuit operation," Electronics Letters, vol. 39, no. 12, pp. 933-935, 2003.
[110]
W. Liu et al., "Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors," Materials Science Forum, vol. 433-436, pp. 781-784, 2003.
[111]
S. M. Koo et al., "Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor," Applied Physics Letters, vol. 83, no. 19, pp. 3975-3977, 2003.
[112]
E. Danielson et al., "Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors," Solid-State Electronics, vol. 47, no. 4, pp. 639-644, 2003.
[113]
S. M. Koo et al., "Processing and properties of ferroelectric Pb(Zr,Ti)O-3/silicon carbide field-effect transistor," Integrated Ferroelectrics, vol. 57, pp. 1221-1231, 2003.
[114]
S. -. Koo et al., "Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs," Materials Science Forum, vol. 433-436, pp. 773-776, 2003.
[115]
E. Danielsson et al., "Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H-SiC," Journal of Applied Physics, vol. 91, no. 4, pp. 2372-2379, 2002.
[116]
S. M. Koo et al., "Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide," Solid-State Electronics, vol. 46, no. 9, pp. 1375-1380, 2002.
[117]
S. K. Lee et al., "Electrical characterization of titanium-based ohmic contacts to 4H-Silicon carbide for high-power and high-temperature operation," Journal of the Korean Physical Society, vol. 40, no. 4, pp. 572-576, 2002.
[118]
S. M. Koo et al., "Ferroelectric Pb(Zr,Ti)O-3/Al2O3/4H-SiC diode structures," Applied Physics Letters, vol. 81, no. 5, pp. 895-897, 2002.
[119]
S. -. Koo et al., "Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors," Materials Science Forum, vol. 389-393, no. 2, pp. 1235-1238, 2002.
[120]
E. Danielsson et al., "Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors," Materials Science Forum, vol. 389-393, no. 2, pp. 1337-1340, 2002.
[121]
S. K. Lee et al., "Low resistivity ohmic contacts on 4H-silicon carbide for high power and high temperature device applications," Microelectronic Engineering, vol. 60, no. 02-jan, pp. 261-268, 2002.
[122]
S. K. Lee, C.-M. Zetterling and M. Östling, "Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications," Journal of Applied Physics, vol. 92, no. 1, pp. 253-260, 2002.
[123]
S. K. Lee et al., "Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide," Journal of Electronic Materials, vol. 31, no. 5, pp. 340-345, 2002.
[124]
S. K. Lee et al., "Reduction of the Schottky barrier height on silicon carbide using Au nano-particles," Solid-State Electronics, vol. 46, no. 9, pp. 1433-1440, 2002.
[125]
S. -. Lee et al., "Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide," Materials Science Forum, vol. 389-393, no. 2, pp. 937-940, 2002.
[126]
E. Danielsson et al., "The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions," Solid-State Electronics, vol. 46, no. 6, pp. 827-835, 2002.
[127]
E. Danielsson et al., "Fabrication and characterization of heterojunction diodes with HVPE-Grown GaN on 4H-SiC," IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 444-449, 2001.
[128]
H. Cho et al., "High density plasma via hole etching in SiC," Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, vol. 19, no. 4, pp. 1878-1881, 2001.
[129]
E. Danielsson et al., "Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization," Journal of Electronic Materials, vol. 30, no. 3, pp. 247-252, 2001.
[130]
S. K. Lee, C.-M. Zetterling and M. Östling, "Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide," Journal of Electronic Materials, vol. 30, no. 3, pp. 242-246, 2001.
[131]
F. Dahlquist et al., "2.8 kV, forward drop JBS diode with low leakage," Materials Science Forum, vol. 338-342, pp. 1179-1182, 2000.
[132]
N. Lundberg et al., "CVD-based tungsten carbide Schottky contacts to 6H-SiC for very high-temperature operation," Journal of Electronic Materials, vol. 29, no. 3, pp. 372-375, 2000.
[133]
E. Danielsson et al., "Dry etching and metallization schemes in a GaN/SiC heterojunction device process," Materials Science Forum, vol. 338-342, pp. 1049-1052, 2000.
[134]
P. Leerungnawarat et al., "Effect of UV light irradiation on SiC dry etch rates," Journal of Electronic Materials, vol. 29, no. 3, pp. 342-346, 2000.
[135]
S. K. Lee et al., "Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H-silicon carbide," Applied Physics Letters, vol. 77, no. 10, pp. 1478-1480, 2000.
[136]
L. W. Wang et al., "Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen," Journal of Physics D : Applied Physics, vol. 33, no. 12, pp. 1551-1555, 2000.
[137]
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Icke refereegranskade
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C.-M. Zetterling, Process technology for silicon carbide devices. 1st ed. London : Institution of Electrical Engineers (IEE), 2002.
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Övriga
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