Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
| 1116 | 2 | SILICON OXYNITRIDE//BORON PENETRATION//SILICON NITRIDE | 10021 |
| 26607 | 1 | LOW TEMPERATURE SILICON OXIDATION//ANODIC PLASMA OXIDATION//DIRECTIONAL OXIDATION | 270 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | LOW TEMPERATURE SILICON OXIDATION | authKW | 350186 | 1% | 100% | 3 |
| 2 | ANODIC PLASMA OXIDATION | authKW | 233457 | 1% | 100% | 2 |
| 3 | DIRECTIONAL OXIDATION | authKW | 233457 | 1% | 100% | 2 |
| 4 | HIGH RATE SILICON OXIDATION | authKW | 233457 | 1% | 100% | 2 |
| 5 | JORGENSEN MOTT MODEL | authKW | 233457 | 1% | 100% | 2 |
| 6 | OXYGEN NEGATIVE ION | authKW | 175090 | 1% | 50% | 3 |
| 7 | AL2O3 CENTER DOT SIO2 COMPOSITE THIN FILM | authKW | 116729 | 0% | 100% | 1 |
| 8 | BEREICH SONDERFOR FESTKORPERELEKTR 56 | address | 116729 | 0% | 100% | 1 |
| 9 | COPLANAR DBD | authKW | 116729 | 0% | 100% | 1 |
| 10 | DIRECTIONAL SILICON OXIDATION | authKW | 116729 | 0% | 100% | 1 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Materials Science, Coatings & Films | 3890 | 27% | 0% | 74 |
| 2 | Physics, Applied | 3016 | 67% | 0% | 180 |
| 3 | Physics, Condensed Matter | 789 | 29% | 0% | 79 |
| 4 | Engineering, Electrical & Electronic | 202 | 18% | 0% | 49 |
| 5 | Materials Science, Multidisciplinary | 155 | 20% | 0% | 53 |
| 6 | Electrochemistry | 120 | 6% | 0% | 17 |
| 7 | COMPUTER APPLICATIONS & CYBERNETICS | 43 | 0% | 0% | 1 |
| 8 | Nanoscience & Nanotechnology | 33 | 5% | 0% | 13 |
| 9 | Materials Science, Ceramics | 15 | 2% | 0% | 5 |
| 10 | Chemistry, Physical | 11 | 8% | 0% | 21 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | BEREICH SONDERFOR FESTKORPERELEKTR 56 | 116729 | 0% | 100% | 1 |
| 2 | MAT SCI MINERAL ENGN XRAY OPT | 116729 | 0% | 100% | 1 |
| 3 | SOALR TERR ENVIRONM | 116729 | 0% | 100% | 1 |
| 4 | ADV MARKING S | 38908 | 0% | 33% | 1 |
| 5 | OPTOMECHATORON | 29181 | 0% | 25% | 1 |
| 6 | YAMANASHI | 29181 | 0% | 25% | 1 |
| 7 | ADV SCI TECHNOL COOPERAT | 25147 | 2% | 4% | 5 |
| 8 | UMR CNRS 6610 | 23344 | 0% | 20% | 1 |
| 9 | PROCUREMENT | 20297 | 1% | 9% | 2 |
| 10 | INFORMAT TELECOMMUN ELECT | 8977 | 0% | 8% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | APPLICATIONS OF SURFACE SCIENCE | 4830 | 2% | 1% | 5 |
| 2 | THIN SOLID FILMS | 2299 | 10% | 0% | 27 |
| 3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1573 | 1% | 0% | 4 |
| 4 | JOURNAL OF APPLIED PHYSICS | 1226 | 13% | 0% | 34 |
| 5 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 951 | 6% | 0% | 16 |
| 6 | SOLID-STATE ELECTRONICS | 934 | 3% | 0% | 9 |
| 7 | APPLIED SURFACE SCIENCE | 699 | 6% | 0% | 15 |
| 8 | JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS | 661 | 0% | 1% | 1 |
| 9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 649 | 3% | 0% | 9 |
| 10 | OPEN CHEMISTRY | 579 | 0% | 0% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |