- Material Properties
- Crystal structure and Polytypes
- Mechanical properties
- Electrical properties
- Defects
- Process Technology
- Bulk material growth
- Epitaxial growth
- Ion implantation
- Silicon carbide etching
- Dielectrics
- Metals
- Device Design
- Two terminal devices (Schottky and pin diodes, LEDs, Sensors, resistors, capacitors)
- Three terminal devices (BJT, JFET, MOSFET, IGBT, GTO)
- Circuit Design
- High voltage design
- High temperature design
- Applications
FIH3604 Silicon Carbide Electronics 7.5 credits

Information per course offering
Course offerings are missing for current or upcoming semesters.
Course syllabus as PDF
Please note: all information from the Course syllabus is available on this page in an accessible format.
Course syllabus FIH3604 (Spring 2021–)Content and learning outcomes
Course contents
Intended learning outcomes
The student should be able to write the introductory chapter on silicon carbide for the licentiate or doctoral thesis.
Literature and preparations
Specific prerequisites
Semiconductor Devices
Literature
Examination and completion
If the course is discontinued, students may request to be examined during the following two academic years.
Grading scale
Examination
- EXA1 - Examination, 7.5 credits, grading scale: P, F
Based on recommendation from KTH’s coordinator for disabilities, the examiner will decide how to adapt an examination for students with documented disability.
The examiner may apply another examination format when re-examining individual students.
Grading scale: Pass/Fail
Other requirements for final grade
Finished introductory chapter on silicon carbide electronics for Licentiate/Doctoral thesis
Seminar attendence
Examiner
Ethical approach
- All members of a group are responsible for the group's work.
- In any assessment, every student shall honestly disclose any help received and sources used.
- In an oral assessment, every student shall be able to present and answer questions about the entire assignment and solution.