FIH3604 Silicon Carbide Electronics 7.5 credits

• Material Properties
• Crystal structure and Polytypes
• Mechanical properties
• Electrical properties
• Defects
• Process Technology
• Bulk material growth
• Epitaxial growth
• Ion implantation
• Silicon carbide etching
• Dielectrics
• Metals
• Device Design
• Two terminal devices (Schottky and pin diodes, LEDs, Sensors, resistors, capacitors)
• Three terminal devices (BJT, JFET, MOSFET, IGBT, GTO)
• Circuit Design
• High voltage design
• High temperature design
• Applications

The student should be able to write the introductory chapter on silicon carbide for the licentiate or doctoral thesis.

Semiconductor Devices

If the course is discontinued, students may request to be examined during the following two academic years.

• EXA1 - Examination, 7.5 credits, grading scale: P, F

Based on recommendation from KTH’s coordinator for disabilities, the examiner will decide how to adapt an examination for students with documented disability.

The examiner may apply another examination format when re-examining individual students.

Grading scale: Pass/Fail

Finished introductory chapter on silicon carbide electronics for Licentiate/Doctoral thesis

Seminar attendence

Carl-Mikael Zetterling

• All members of a group are responsible for the group's work.
• In any assessment, every student shall honestly disclose any help received and sources used.
• In an oral assessment, every student shall be able to present and answer questions about the entire assignment and solution.