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FIH3607 Epitaxy of Semiconductor Materials 10.5 credits

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Application

For course offering

Autumn 2023 Start 30 Oct 2023 programme students

Application code

51662

Headings with content from the Course syllabus FIH3607 (Spring 2019–) are denoted with an asterisk ( )

Content and learning outcomes

Course contents

The course provides an introduction to crystal growth technology with several examples of technical implementations as well as specific materials systems. The fundamentals of the crystal growth process are reviewed as based on gas kinetics, deposition theory and thermodynamics, and a number of thin-film epitaxial processes are described in detail.

Intended learning outcomes

This course will give an advanced level treatment of crystal growth basics, methods of instrumentation for thin-film epitaxial growth, as well as an orientation of specific materials systems of interest for a range of micro- and optoelectronics applications.

After a successful completion of the course, students should be able to:

. Describe fundamental processes of crystal growth taking account of both thermodynamic and kinetic aspects

. Describe the liquid-phase epitaxy (LPE) process

. Describe the hydride vapor-phase epitaxy (HVPE) process

. Describe the metal-organic vapor-phase epitaxy (MOVPE) process

. Describe the moelcular-beam epitaxy (MBE) process

. Describe the process and applications of selective area growth (SAG)

. Understand the basic fundaments for the numerical modeling of the epitaxial process

. Describe the properties and applications for a range of compound semiconductor materials, including those based on the GsAs, InP, SIC, SiGe, GaN systems, as well as nanostructured materials.

Literature and preparations

Specific prerequisites

Basic physics and chemistry courses

Recommended prerequisites

Basic physics and chemistry courses

Equipment

No information inserted

Literature

No information inserted

Examination and completion

If the course is discontinued, students may request to be examined during the following two academic years.

Grading scale

P, F

Examination

  • EXA1 - Examination, 10.5 credits, grading scale: P, F

Based on recommendation from KTH’s coordinator for disabilities, the examiner will decide how to adapt an examination for students with documented disability.

The examiner may apply another examination format when re-examining individual students.

Participation in lectures and seminars, own topical seminar, home assignments

Opportunity to complete the requirements via supplementary examination

No information inserted

Opportunity to raise an approved grade via renewed examination

No information inserted

Examiner

Ethical approach

  • All members of a group are responsible for the group's work.
  • In any assessment, every student shall honestly disclose any help received and sources used.
  • In an oral assessment, every student shall be able to present and answer questions about the entire assignment and solution.

Further information

Course room in Canvas

Registered students find further information about the implementation of the course in the course room in Canvas. A link to the course room can be found under the tab Studies in the Personal menu at the start of the course.

Offered by

Main field of study

This course does not belong to any Main field of study.

Education cycle

Third cycle

Add-on studies

No information inserted

Contact

Mattias Hammar (hammar@kth.se)

Postgraduate course

Postgraduate courses at EECS/Electronics and Embedded Systems