Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
| 1116 | 2 | SILICON OXYNITRIDE//BORON PENETRATION//SILICON NITRIDE | 10021 |
| 18908 | 1 | CHEMICAL AFFINITY TENSOR//GUIDED MODES OF ELECTRON WAVE//FILM EDGE | 554 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | CHEMICAL AFFINITY TENSOR | authKW | 170665 | 1% | 100% | 3 |
| 2 | GUIDED MODES OF ELECTRON WAVE | authKW | 113777 | 0% | 100% | 2 |
| 3 | FILM EDGE | authKW | 75850 | 0% | 67% | 2 |
| 4 | THERMAL OXIDATION OF SILICON | authKW | 75850 | 0% | 67% | 2 |
| 5 | 007 MICROMETER TECHNOLOGIES | authKW | 56888 | 0% | 100% | 1 |
| 6 | 05 MICROMETER TECHNOLOGIES | authKW | 56888 | 0% | 100% | 1 |
| 7 | 111 INTERFACE | authKW | 56888 | 0% | 100% | 1 |
| 8 | 186031Z | address | 56888 | 0% | 100% | 1 |
| 9 | 2 D OXIDATION | authKW | 56888 | 0% | 100% | 1 |
| 10 | 5 LAYERS OF METAL | authKW | 56888 | 0% | 100% | 1 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 3404 | 50% | 0% | 279 |
| 2 | Engineering, Electrical & Electronic | 3249 | 45% | 0% | 251 |
| 3 | Materials Science, Coatings & Films | 1721 | 13% | 0% | 72 |
| 4 | Electrochemistry | 1024 | 12% | 0% | 67 |
| 5 | Computer Science, Hardware & Architecture | 463 | 5% | 0% | 30 |
| 6 | Physics, Condensed Matter | 314 | 14% | 0% | 79 |
| 7 | Nanoscience & Nanotechnology | 296 | 9% | 0% | 49 |
| 8 | Computer Science, Interdisciplinary Applications | 247 | 6% | 0% | 35 |
| 9 | Materials Science, Multidisciplinary | 112 | 13% | 0% | 74 |
| 10 | Microscopy | 30 | 1% | 0% | 5 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | 186031Z | 56888 | 0% | 100% | 1 |
| 2 | ABT HALBLEITER | 56888 | 0% | 100% | 1 |
| 3 | CM PA | 56888 | 0% | 100% | 1 |
| 4 | CORP FRONTEND | 56888 | 0% | 100% | 1 |
| 5 | EFCIS | 56888 | 0% | 100% | 1 |
| 6 | FUTURE PV INNOVAT PROJECT | 56888 | 0% | 100% | 1 |
| 7 | INTEGRAT MICRO MECH SYST | 56888 | 0% | 100% | 1 |
| 8 | IST IMM SEZ BOLOGNA | 56888 | 0% | 100% | 1 |
| 9 | NANOFABRICATION IL | 56888 | 0% | 100% | 1 |
| 10 | SOLID STATE PHYS NM STRUCT CONSORTIUM | 56888 | 0% | 100% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 17717 | 13% | 0% | 70 |
| 2 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 7776 | 12% | 0% | 65 |
| 3 | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 6568 | 4% | 0% | 24 |
| 4 | SOLID STATE TECHNOLOGY | 3681 | 2% | 1% | 11 |
| 5 | SOLID-STATE ELECTRONICS | 2251 | 4% | 0% | 20 |
| 6 | IEEE ELECTRON DEVICE LETTERS | 1957 | 3% | 0% | 18 |
| 7 | SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS | 1849 | 1% | 1% | 3 |
| 8 | COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING | 1763 | 2% | 0% | 9 |
| 9 | SOVIET MICROELECTRONICS | 1706 | 1% | 1% | 3 |
| 10 | ELECTRON DEVICE LETTERS | 1695 | 1% | 1% | 3 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |