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Course presentation
This course introduces the most important semiconductor devices that are utilized in modern electronics. We focus on the MOS-transistor, pn- and Schottky diodes and various types of memory cells. We also cover solar cells, photodiodes and light emitting diodes. In the course we discuss power and gate delay in CMOS-based circuits. An overview of the evolution of advanced technology nodes for CMOS according to Moore's law is provided.
You will become familiar with the process and manufacturing flow that is used for moden microelectronics. A special focus is placed on sustainability aspects, including energy usage and limited resource supply.
Headings denoted with an asterisk ( * ) is retrieved from the course syllabus version Spring 2022
Content and learning outcomes
Course contents
This course introduces the most important semiconductor components that are used in the modern electronics. We focus on the MOS-transistor, pn and schottkydiodes and different types of memory cells. Furthermore, solar cells, photodiodes and light-emitting diodes are included. In the course, power consumption and gate delay in CMOS-based circuits are discussed. An overview is given of the development of so-called technology nodes for advanced CMOS according to Moore's law. You should be familiar with the process flow that is used to produce modern microelectronics. Strong emphasis is placed on sustainability aspects such as energy consumption and finite resources.
Intended learning outcomes
After passing the course, the student shall be able to
describe the electronic band structure for insulators, semiconductors and metals qualitatively
use the concepts electron- and hole-concentration, bandgap and mobility for calculations of current-voltage relations in semiconductor components
analyse and calculate the internal electrostatics (charges, electric field and potential) in semiconductor components based on pn- and MOS-structures
describe the function and the application areas for the pn-diode, the MOS-transistor and common types of memory cells and some kind of semiconductor sensor
describe the basic properties for CMOS-inverters and how these are used to implement integrated circuits.
give an account of the most important sustainability aspects in production of modern microelectronics.
Learning activities
12 scheduled lectures (recommend attendance), in HYBRID lecture room
6 student recitations (mandatory attendance) in regular lecture room or Zoom
1 laboratory session at Kista Campus with 2 seminars, main campus (mandatory attendance)
Detailed plan
Activity
Date
Time
Place
Content
Reading Instruction
L1
Jan 18
13-15
D34=hybrid
Course intro
Bond model, Energy Band model, Fermi-Dirac distribution function
This document and Canvas pages
Ch. 1.1-1.9, 1.11, 2.1-2.2
L2
Jan 19
13-15
D34=hybrid
Energy Band model, no and po, Drift Current
Ch. 1.1-1.9, 1.11, 2.1-2.2
L3
Jan 24
10-12
D34=hybrid
Diffusion currents Generation/Recombination
Ch. 2.3-2.9
S1
Jan 25
10-12
E35=hybrid
Student recitation 1
Online S1
Sem 1 Labintro
Jan 27
15-16 (note 1 hour only)
E35=hybrid
Extraction of properties from measurement data. What is a good written report?
Will be summarized and posted online
L4
Jan 31
10-12
E35=hybrid
PN-diode: Electrostatics
Ch. 4.1-4.5
L5
Feb 1
10-12
E35=hybrid
PN-diode: Drift and Diffusion currents
Ch. 4.6-4.9
S2
Feb 2
10-12
E35=hybrid
Student recitation S2
Online S2
L6
Feb 7
13-15
D34=hybrid
PN: Solar cells, LEDs and Diode Lasers
Ch. 4.12-4.15
Lab Weeks
Feb 8 – Feb 17
Sign-up for one 2h slot
Kista Campus or online
All course content until this week
Instructions in Canvas and notes from first Seminar
L7
Feb 9
10-12
Zoom
Schottky diodes and Ohmic contacts
Ch. 4.16, 18-19, 21
L8
Feb 11
13-15
D34=hybrid
MOS Capacitor. Electrostatics
Ch. 5.1-5.6
S3
Feb 11
15-17
D41=regular
Student recitation S3
Online S3
L9
Feb 14
13-15
D34=regular
MOSFET: Electrostatics and drain current
Ch. 6.1-6.2, 6.4-6.6
L10
Feb 16
10-12
D34=hybrid
MOSFET: Mobility and CMOS inverter
Ch. 6.3 (Figure 6-9) and 6.7
S4
Feb 18
13-15
D41=regular
Student recitation S4
Online S4
L11
Feb 22
10-12
D34=hybrid
MOSFET OFF-state and scaling
Chap. 7 based on Figs. 7-2, 7-5 & 6, 7-9, 7-13 & 7-14, 7-18 & 7-19
L12
Feb 23
10-12
V01=regular
MOS-based memory devices and image sensors
Ch. 6.16, Ch. 5.10 plus additional PDFs
S5
Feb 25
10-12
V21=regular
Student recitation S5
Online S5
Deadline
Feb 23
23.59
First version of lab report submitted under ASSIGNMENTS menu
Sem 2 Peer Feedback
Feb 25
13-15
V21=regular
Peer-review seminar on Laboratory report. Post feedback in Canvas before seminar
S6
March 2
10-12
V21=regular
Student recitation S6
Online S6
Deadline
March 17 23.59
Final version of lab report submitted under ASSIGNMENTS menu
Exam
March 18
8-13
V021, V12
Written Exam Online signup is mandatory!
All
Preparations before course start
Recommended prerequisites
Analogue and digital circuits, modern physics and basic electromagnetics.
Literature
No information inserted
Support for students with disabilities
Students at KTH with a permanent disability can get support during studies from Funka:
LABA - Laboration, 1.5 credits, Grading scale: P, F
SEMA - Seminar, 1.5 credits, Grading scale: P, F
TENA - Written Final Exam, 4.5 credits, Grading scale: A, B, C, D, E, FX, F
Based on recommendation from KTH’s coordinator for disabilities, the examiner will decide how to adapt an examination for students with documented disability.
The examiner may apply another examination format when re-examining individual students.
The section below is not retrieved from the course syllabus:
Laboration ( LABA )
Seminar ( SEMA )
Written Final Exam ( TENA )
Ethical approach
All members of a group are responsible for the group's work.
In any assessment, every student shall honestly disclose any help received and sources used.
In an oral assessment, every student shall be able to present and answer questions about the entire assignment and solution.
