IH1611 Semiconductor Devices 7.5 credits

Halvledarkomponenter

The overall goal of the course is that you should be able to describe the function of the pn-diode, the bipolar and the MOS transistor and how these three devices are used in applications. You should be able to derive and calculate the currents inside these devices and be able to analyse the internal state of the charge distribution, the electric field and the current density.

  • Education cycle

    First cycle
  • Main field of study

    Electrical Engineering
    Technology
  • Grading scale

    A, B, C, D, E, FX, F

Course offerings

Spring 19 for programme students

Spring 19 Doktorand for single courses students

  • Periods

    Spring 19 P3 (7.5 credits)

  • Application code

    20123

  • Start date

    15/01/2019

  • End date

    15/03/2019

  • Language of instruction

    English

  • Campus

    KTH Campus

  • Tutoring time

    Daytime

  • Form of study

    Normal

  • Number of places *

    Max. 1

    *) If there are more applicants than number of places selection will be made.

  • Course responsible

    Gunnar Malm <gunta@kth.se>

  • Target group

    For Phd-students at KTH

Spring 20 for programme students

Intended learning outcomes

In detail, after a successful completion of the course you will be able to:

  1. Qualitatively describe the electronic energy band structure of insulators, semiconductors and metals.
  2. Calculate the electron and hole concentration in the conduction and valence band using Fermi-Dirac statistics and the energy band model.
  3. Describe the constituents of the current density in semiconductors and derive analytical expressions for the current density in the case of low-level injection, electron-hole recombination, externally applied voltage and external generation by light, using the drift-diffusion model.
  4. Describe the function of the pn-diode, the bipolar and the long channel MOS transistor.
  5. Analyse and calculate the internal electrostatics (electric charge, electric field and potential) of the pn-diode, the bipolar and the long channel MOS transistor.
  6. Derive and calculate the current density in the pn-diode, the bipolar and the long channel MOS transistor using the drift-diffusion model.
  7. Describe major process technologies, used to fabricate semiconductor devices and relate these to schematic cross-section drawings of devices.
  8. Extract device properties from electrical measurements of devices.
  9. Perform oral and written presentation of the subject Semiconductor Components.

Course main content

The overall goal of the course is that you should be able to describe the function of devices, based on the pn-junctions and MOS-structures. These devices includes the bipolar and MOS transistors, and memory cells. You should be able to describe how these devices are used in applications. You should be able to derive and calculate the currents inside these devices and be able to analyse the internal state of the charge distribution, the electric field and the current density for given terminal bias voltages. You should be familiar with the process flow, used in the fabrication of modern microelectronics.

Eligibility

Analog electronics, electrostatics and modern physics

Recommended prerequisites

Analogue and digital circuits, modern physics and basic electromagnetics.

Literature

Modern Semiconductor Devices for Integrated Circuits, Chenming Calvin Hu, Förlag Pearson, År 2010, ISBN-13: 978-0-13-700668-7
ISBN-10:0-13-700668-3

Examination

  • LABA - Laboration, 1.5, grading scale: P, F
  • SEMA - Seminar, 1.5, grading scale: P, F
  • TENA - Written Final Exam, 4.5, grading scale: A, B, C, D, E, FX, F

Offered by

EECS/Electronics and Embedded Systems

Contact

Gunnar Malm

Examiner

Gunnar Malm <gunta@kth.se>

Supplementary information

There is some overlap between the courses IH1611 and IH2651. These courses can therefore not be included together in a degree.

Version

Course syllabus valid from: Spring 2019.
Examination information valid from: Spring 2019.