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Headings denoted with an asterisk ( * ) is retrieved from the course syllabus version Autumn 2024
Content and learning outcomes
Course contents
The course covers modelling of semiconductors and nanostructures with numerical methods such as the finite difference method (FDM) and the finite element method (FEM) and industry standard simulation programs for circuit design. The focus is on modern CMOS technology nodes including FinFET, SOI and future generations of 3D devices. Power consumption, energy efficiency and sustainable energy production are recurring themes.
The following areas are covered:
Description of comparative analysis of application and basic principles of physical device simulation (TCAD) and compact models for circuit simulation.
Compact models for modern semiconductor technologies and their implementation by means of hardware descriptive languages in design software, including corner modelling and other statistical methods.
General introduction to the combination of process simulation and device simulation for optimisation of future generations of semiconductor devices.
Hierarchies for device, circuit and mixed device and circuit simulations and multi-physics simulations in the semiconductor and nanostructure areas.
Thermal modelling, power consumption, variability and concepts such as ”dark silicon” in integrated circuits with 100-million transistors.
Parallel programming and hardware support for demanding semiconductor simulations.
Intended learning outcomes
After passing the course, the student shall be able to
choose appropriate transport models and material parameters for physical simulation (TCAD) of advanced semiconductor devices such as FinFET and SOI
use compact models for circuit simulation based on modern CMOS technology nodes and knowledge of power consumption, parameter extraction, fitting to measurement data and statistical methods such as corner simulations
use mixed circuit and device simulations for example in the power electronics area with a focus on energy efficiency and sustainable energy production
model discrete devices such as solar cells, light-emitting diodes and semiconductor-based sensors with a focus on energy efficiency and sustainable energy production
use computer programs for multi-physics simulations for e.g. thermal effects in devices and circuits.
Detailed plan
Contents and Reading
Lecture/Tutorial
Day
Time
Place
Content
Reading
1
Mon 28 Oct
13-15
Q22
Course information; Introduction to Physical Device Simulations
Saha Ch. 1 Saha Ch. 2.2.7 (IL2240 Hu, Ch. 7)
2
Tue 31 Oct
10-12
V35
Compact models for circuit simulations part I
Detailed reading list in Module, chapters 1, 4 ,5, 9, 12 in Saha
Tutorial 1
Will be rescheduled at end of course
3
Mon 4 Nov
10-12
V01
Compact models for circuit simulations part II
Detailed reading list in Module, chapters 1, 4 ,5, 9, 12 in Saha
TEN1 - Written exam, 7.5 credits, Grading scale: A, B, C, D, E, FX, F
Based on recommendation from KTH’s coordinator for disabilities, the examiner will decide how to adapt an examination for students with documented disability.
The examiner may apply another examination format when re-examining individual students.
Ethical approach
All members of a group are responsible for the group's work.
In any assessment, every student shall honestly disclose any help received and sources used.
In an oral assessment, every student shall be able to present and answer questions about the entire assignment and solution.
