Methods for design and analysis of packages for power semiconductor devices:
Design of discrete power devices packages, industrial power modules, and press-packs
Bonding, soldering, and molding
Thermal and mechanical design of packages
Electromigration
Parasitic inductances of packages
Power Cycling and Thermal cycling
Measurements of electrical and thermal quantities
Electrical isolation
Copper stud bumping design
Advanced modeling methods
After completion of the course the student shall be able to
• explain how material choices of the package influence the thermal properties
• explain how material choices of the package influence the reliability
• explain why different designs may have different values of parasitic inductances
• explain the concepts of power cycling and thermal cycling
• explain how thermal cycling and power cycling affect the expected lifetime of a package
• explain the concepts of FIT rate and MTTF
• calculate approximate values of thermal resistances and capacitances
• calculate approximate values of parasitic inductances
• calculate the junction temperature in steady state
• calculate transient junction temperatures
• calculate temperature variations due to power cycling
• describe the main design features of a discrete power device package, an industrial power module, and a press-pack device
• describe the different production steps of a discrete power device package, an industrial power module, and a press-pack device
• describe how different parasitic elements influence the properties of the package
• describe failure modes of different packages
• describe how the thermal resistance and capacitance can be determined for a given package
• describe methods for minimizing the effects of mismatch in thermal expansion coefficients
• describe the concept of electromigration