Course development and history
- Material Properties
- Crystal structure and Polytypes
- Mechanical properties
- Electrical properties
- Process Technology
- Bulk material growth
- Epitaxial growth
- Ion implantation
- Silicon carbide etching
- Device Design
- Two terminal devices (Schottky and pin diodes, LEDs, Sensors, resistors, capacitors)
- Three terminal devices (BJT, JFET, MOSFET, IGBT, GTO)
- Circuit Design
- High voltage design
- High temperature design
The student should be able to write the introductory chapter on silicon carbide for the licentiate or doctoral thesis.
No information inserted
Zetterling, C.-M., Editor, Process Technology for Silicon Carbide Devices, IEE EMIS Processing Series 2, ISBN 0-85296-998-8, 2002.
Saddow, S.E. and Agarwal, A., Editors, Advances in Silicon Carbide Processing and Applications, Artech House, ISBN I-58053-740-5, 2004.
Based on recommendation from KTH’s coordinator for disabilities, the examiner will decide how to adapt an examination for students with documented disability. The examiner may apply another examination format when re-examining individual students.
Grading scale: Pass/Fail
Finished introductory chapter on silicon carbide electronics for Licentiate/Doctoral thesis
Further information about the course can be found on the Course web at the link below. Information on the Course web will later be moved to this site.
EECS/Electronics and Embedded Systems