Intended learning outcomes *
This course will give an advanced level treatment of crystal growth basics, methods of instrumentation for thin-film epitaxial growth, as well as an orientation of specific materials systems of interest for a range of micro- and optoelectronics applications.
After a successful completion of the course, students should be able to:
. Describe fundamental processes of crystal growth taking account of both thermodynamic and kinetic aspects
. Describe the liquid-phase epitaxy (LPE) process
. Describe the hydride vapor-phase epitaxy (HVPE) process
. Describe the metal-organic vapor-phase epitaxy (MOVPE) process
. Describe the moelcular-beam epitaxy (MBE) process
. Describe the process and applications of selective area growth (SAG)
. Understand the basic fundaments for the numerical modeling of the epitaxial process
. Describe the properties and applications for a range of compound semiconductor materials, including those based on the GsAs, InP, SIC, SiGe, GaN systems, as well as nanostructured materials.