Intended learning outcomes *
During the course, the students will learn the basics of semiconductor optics. The studied topics include properties of electronic and phonon optical transitions in bulk materials and nanostructures, and as well as electric field and nonlinear effects. In addition, the students will examine some topics that are at the frontiers of contemporary nanooptics. The students will thoroughly analyse the near field radiation and its applications in microscopy and nanophotonics and familiarise themselves with optical properties of metals (plasmonics).
After the completed course, the students should be able to:
• Have basic knowledge about band structure of semiconductor materials, free and bound carriers, excitons, plasmons and phonons, and their influence on optical spectra.
• Define distinctions between direct and indirect, radiative and nonradiative, and allowed and forbidden transitions in semiconductors and their nanostructures.
• Calculate exciton transition energies and energy levels in quantum wells.
• Define distinctions and common features between far and near field light, nano- and conventional optics.
• Characterise near field optical microscopy conditions needed to evaluate such optical properties as luminescence, transmission and refraction. This includes identifying advantages and drawbacks of the technique and making optimal tradeoffs for specific tasks.
• Describe basics and identify important issues in technology and applications of semiconductor nanostructures and plasmonic structures.
• Determine conditions of plasmon generation in planar and spherical plasmonic structures.