IH2657 Design of Nano Semiconductor Devices 7.5 credits

Design av nanohalvledarkomponenter

Level: Advanced

  • Education cycle

    Second cycle
  • Main field of study

    Electrical Engineering
  • Grading scale

    A, B, C, D, E, FX, F

Course offerings

Spring 19 for programme students

Spring 20 for programme students

  • Periods

    Spring 20 P4 (7.5 credits)

  • Application code

    60924

  • Start date

    16/03/2020

  • End date

    01/06/2020

  • Language of instruction

    English

  • Campus

    KTH Kista

  • Tutoring time

    Daytime

  • Form of study

    Normal

  • Number of places *

    25 - 40

    *) The Course date may be cancelled if number of admitted are less than minimum of places. If there are more applicants than number of places selection will be made.

  • Course responsible

    Carl-Mikael Zetterling <bellman@kth.se>

  • Part of programme

Intended learning outcomes

The course is about advanced nanometerscaled semiconductor devices for application areas such as very large-scale integrated circuits and for high-speed communications.

After the course, the student should be able to

- analyse the operation of semiconductor devices

- analyse delay times from parasitics

- analyse scaling of MOSFETs

- design a scaled down device from a given device

- discuss semiconductor devices based on research articles

With analyse is meant to derive relations and calculate from equations given in the textbook.

Course main content

This course covers the the most important device in silicon: nanometer sized MOSFETs for digital high speed operation. Sections: Historical background of semiconductor devices, technology and device trends, physics of the MOS structure, MOSFET scaling theory, nanometer design, silicon-on-insulator (SOI), and new techniques such as nanotubes and nanowires. Apart from the text book, research articles are studied, and the students select one to present in English in a seminar.

Eligibility

Recommended prerequisites

A basic course in semiconductor devices or semiconductor physics.

Literature

Fundamentals of Modern VLSI Devices, Y. Taur &T Ning

Upplaga: 1 Förlag: Cambridge År: 1998

ISBN:

Övrig litteratur

Forskningsartiklar från tex IEEE-tidskrifter.

Research articles from e.g. IEEE journals.

Examination

  • ANN1 - Examination, 7.5, grading scale: A, B, C, D, E, FX, F

Requirements for final grade

Homework assignments, computer lab and seminar presentation. Grading is based in equal parts on the three tasks. (ANN1; 7,5 hp)

Offered by

EECS/Electronics and Embedded Systems

Examiner

Carl-Mikael Zetterling <bellman@kth.se>

Version

Course syllabus valid from: Spring 2019.
Examination information valid from: Spring 2019.