IEEE style bio

Curriculum Vitae

B. Gunnar Malm

IEEE Senior Member          

Bengt Gunnar Malm (M’98 - SM’10) was born in Stockholm, Sweden, in 1972. Since 2020 he is a Professor in Integrated Devices and Circuits at the School of Electrical Engineering and Computer Science, KTH, Sweden. He received the MSc degree in engineering physics from Uppsala University, Uppsala, Sweden, in 1997. He was also an intern at ABB AB, Sweden, in 1996. In 1997 he joined KTH Royal Institute of Technology in Stockholm, where his thesis work focused on high-speed silicon-germanium (SiGe) transistors.  He received the PhD degree in Solid-State Electronics in 2002. In 2011 he received the Docent degree also from KTH.  His research interests include semiconductor and spintronic device physics, characterization with emphasis on noise, fluctuations and variability, and also TCAD modeling. His recent work includes silicon-carbide (SiC) integrated circuits for extreme environments and noise and fluctuations in microwave spintronic devices. He has been the main advisor for 3 PhD students and co-advisor for about 10 students and has published or co-authored more than 100 scientific papers in international journals and conferences. He has coauthored 3 book chapters, given a number of invited conference papers and one tutorial, and has one granted US patent.  Dr. Malm is a member of the ESSDERC TPC and served as co-chair for 2011 event in Helsinki. He was an organizer of ISTDM 2010 and ULIS 2014, and the 2012 general chair for the biannual GigaHertz Symposium and Swedish Radio and Microwave Days. He has an active interest in sustainability issues and served on the KTH Sustainability Council (KTH-S) 2011-2015 and 2017. He served as director of undergraduate studies at the Department of Electronics, KTH, 2012-2017. He served as chairman of the faculty assembly at the school of Electrical Engineering and Computer Science at KTH, 2020-2021.