Ten selected publications
1. M. Ekström, L. Zurauskaite and P. -E. Hellström, "Si thickness influence on subthreshold currents at high temperatures in FDSOI CMOS," 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, pp. 1-4, doi: 10.1109/EuroSOI-ULIS53016.2021.9560668.
The work demonstrates that FDSOI CMOS technolgy can be tailored to allow PFET and NFET operation at operating temperature of 300 °C with low off-state leakge <1 nA/µm.
2. L. Zurauskaite, A. Abedin, P.-E. Hellström and Mikael Östling, “Si-Passivated Ge Gate Stacks with Low Interface State and Oxide Trap Densities Using Thulium Silicate”, ECS Transactions, 8, 387-393(2020). DOI: 10.1149/09805.0387ecst
In the paper, we describe a process to achieve interface state densities less than \(5\times10^{11} eV^{-1}cm^{-2}\) in Ge channel devices. We also determine the boundaries on the process conditions to achive such low interface state density for Ge devices.
3. S. Hou, M. Shakir, P.-E. Hellström, B. G. Malm, C.-M. Zetterling and M. Östling, “A Silicon Carbide 256 pixel UV sensor array operating at 400 °C”, IEEE Journal of Electron Devices Society, 8, 116(2020). DOI:10.1109/JEDS.2020.2966680
The paper demonstrate SiC electronics and UV sensor working at an high operating temperature of 400 °C.
4. G. Jayakumar, M. Lagallais, P.-E. Hellström, M. Mouis, I Pignot-Paintrand, V. Stambouli-Sene, C. Ternon and M. Östling, “Wafer-Scale HfO2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment”, Nanotechnology, 30, 184001(2019). DOI:10.1088/1361-6528/aaffa5
Together with collaborators from GINP (France) we demonstrate a wafer scale process technology for Si nanowire transistors and demonstrated a procedure to detect DNA molecules with the transistors.
5. P. Chaourani, S. Rodriguez, P.-E. Hellström, A. Rusu, “Inductors in a Monolithic 3-D Process: Performance Analysis and Design Guidelines”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 27, 468(2018). DOI: 10.1109/TVLSI.2018.2877132
Monolithic 3D technology is a path to increase transistor packing density when conventional scaling is not feasible. In this paper we analyzed integration schemes of inductors for analog circuits in a monolithic 3D technology.
6. A. Abedin, L. Zurauskaite, A. Asadollahi, K. Garidis, G. Jayakumar, B. G. Malm, P.-E. Hellström and M. Östling, “Germanium on Insulator Fabrication for Monolithic 3-D integration”, IEEE Journal of Electron Device Society, 6, 588(2018). DOI:10.1109/JEDS.2018.2801335
We developed process technology for monolithic 3D integration using Ge transistors and showed their performance using a maximum process temperature of 600 °C.
7. E. Dentoni Litta, P.-E. Hellström and M. Östling, ”Integration of TmSiO/HfO2 Dielectric Stack in Sub-nm EOT High-k/Metal gate CMOS Technology”, IEEE Transaction on Electron Devices, 62, 934(2015). DOI: 10.1109/TED.2015.2391179
The paper describes a highly scaled gate dielectric with an equivalent oxide thickness less than 1 nm without severe degradation of the channel mobility.
8. E. Dentoni Litta, P.-E. Hellström, C. Henkel, S. Valerio, A. Hallén, M. Östling, ”High-deposition-rate atomic layer deposition of thulium oxide from TmCp3and H2O", Journal of The Electrochemical Society, 160, no. 11, D538-D542, Sept. 2013, DOI:10.1149/2.056311jes
We describe an Atomic Layer Deposition process to deposit Tm2O3 with an high deposition rate.
9. V. Gudmundsson, P.-E. Hellström, J. Luo, J. Lu, S.-L. Zhang and M. Östling, “Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation”, IEEE Electron Device Letters 30, 541(2009). DOI:10.1109/LED.2009.2015900
The paper demonstrate a FinFET type transistor on SOI using metallic source drain to reduced source drain resistance. The nano-scaled transistors were fabricated with conventional I-line lithography using the double patterning.
10. J. Hållstedt, M. v Haartman, P.-E. Hellström, M. Östling, and H.H. Radamsson, “Hole mobility in Ultrathin Body SOI pMOSFETs with SiGe and SiGeC Channels”, IEEE Electron Device Letters 27, 466(2006). DOI:10.1109/LED.2006.874763
In the paper we showed that adding Ge in the channel material of an fully depleted SOI MOSFET boosts the mobility of p-type MOSFETs.
