Publications by Mikael Östling
Refereegranskade
Artiklar
[1]
S. Hou et al., "A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 degrees C," IEEE Journal of the Electron Devices Society, vol. 8, no. 1, pp. 116-121, 2020.
[2]
X. Fan et al., "Manufacture and characterization of graphene membranes with suspended silicon proof masses for MEMS and NEMS applications," MICROSYSTEMS & NANOENGINEERING, vol. 6, no. 1, 2020.
[3]
L. Zurauskaite, P.-E. Hellström and M. Östling, "Process Conditions for Low Interface State Density in Si-passivated Ge Devices with TmSiO Interfacial Layer," ECS Journal of Solid State Science and Technology, vol. 9, no. 12, 2020.
[4]
K. Garidis et al., "Selective epitaxial growth of in situ doped SiGe on bulk Ge for p+/n junction formation," Electronics, vol. 9, no. 4, 2020.
[5]
S. Hou et al., "A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode," IEEE Electron Device Letters, vol. 40, no. 1, pp. 51-54, 2019.
[6]
M. W. Hussain et al., "An Intermediate Frequency Amplifier for High-Temperature Applications (vol 65, pg 1411, 2018)," IEEE Transactions on Electron Devices, vol. 66, no. 8, pp. 3694-3694, 2019.
[7]
[8]
S. S. Delekta et al., "Fully inkjet printed ultrathin microsupercapacitors based on graphene electrodes and a nano-graphene oxide electrolyte," Nanoscale, vol. 11, no. 21, pp. 10172-10177, 2019.
[9]
X. Fan et al., "Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers," Nature Electronics, vol. 2, no. 9, pp. 394-404, 2019.
[10]
G. Jayakumar and M. Östling, "Pixel-based biosensor for enhanced control : silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology," Nanotechnology, vol. 30, no. 22, 2019.
[11]
X. Fan et al., "Suspended Graphene Membranes with Attached Silicon Proof Masses as Piezoresistive Nanoelectromechanical Systems Accelerometers," Nano letters (Print), vol. 19, no. 10, pp. 6788-6799, 2019.
[12]
M. Shakir et al., "Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications," Electronics, vol. 8, no. 5, 2019.
[13]
G. Jayakumar, P.-E. Hellström and M. Östling, "Utilizing the superior etch stop quality of HfO 2 in the front end of line wafer scale integration of silicon nanowire biosensors," Microelectronic Engineering, vol. 212, pp. 13-20, 2019.
[14]
G. Jayakumar et al., "Wafer-scale HfO 2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment," Nanotechnology, vol. 30, no. 18, 2019.
[15]
S. S. Delekta, M. Östling and J. Li, "Wet Transfer of Inkjet Printed Graphene for Microsupercapacitors on Arbitrary Substrates," ACS Applied Energy Materials, vol. 2, no. 1, pp. 158-163, 2019.
[16]
A. Salemi et al., "15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain," IEEE Electron Device Letters, vol. 39, no. 1, pp. 63-66, 2018.
[17]
M. Shakir et al., "A 600 degrees C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology," IEEE Electron Device Letters, vol. 39, no. 10, pp. 1540-1543, 2018.
[18]
A. Abedin et al., "Germanium on Insulator Fabrication for Monolithic 3-D Integration," IEEE Journal of the Electron Devices Society, vol. 6, no. 1, pp. 588-593, 2018.
[19]
X. Fan et al., "Humidity and CO2 gas sensing properties of double-layer graphene," Carbon, vol. 127, pp. 576-587, 2018.
[20]
A. Quellmalz et al., "Influence of Humidity on Contact Resistance in Graphene Devices," ACS Applied Materials and Interfaces, vol. 10, no. 48, pp. 41738-41746, 2018.
[21]
P. Loiko et al., "Inkjet-printing of graphene saturable absorbers for similar to 2 mu m bulk and waveguide lasers," Optical Materials Express, vol. 8, no. 9, pp. 2803-2814, 2018.
[22]
T. Kurose et al., "Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics," Materials Science Forum, vol. 924, pp. 971-974, 2018.
[23]
G. Jayakumar, P.-E. Hellström and M. Östling, "Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application," Micromachines, vol. 9, no. 11, 2018.
[24]
S. Hou et al., "Scaling and modeling of high temperature 4H-SiC p-i-n photodiodes," IEEE Journal of the Electron Devices Society, vol. 6, no. 1, pp. 139-145, 2018.
[25]
H. Elahipanah et al., "500 degrees C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits," IEEE Electron Device Letters, vol. 38, no. 10, pp. 1429-1432, 2017.
[26]
H. Elahipanah et al., "A Wafer-Scale Self-Aligned Ni-Silicide (SALICIDE) Low-Ohmic Contact Technology on n-type 4H-SiC," ECS Journal of Solid State Science and Technology, vol. 6, no. 4, pp. 197-200, 2017.
[27]
H. Elahipanah et al., "A wafer-scale Ni-salicide contact technology on n-type 4H-SiC," ECS Journal of Solid State Science and Technology, vol. 6, no. 4, pp. P197-P200, 2017.
[28]
M. Östling et al., "An editorial on the recent advances in high and low temperature electronics," Semiconductor Science and Technology, vol. 32, no. 8, 2017.
[29]
C.-M. Zetterling et al., "Bipolar integrated circuits in SiC for extreme environment operation," Semiconductor Science and Technology, vol. 32, no. 3, 2017.
[30]
G. S. Lobov et al., "Direct birefringence and transmission modulation via dynamic alignment of P3HT nanofibers in an advanced opto-fluidic component," Optical Materials Express, vol. 7, no. 1, pp. 52-61, 2017.
[31]
G. Lobov et al., "Electro-optical effects of high aspect ratio P3HT nanofibers colloid in polymer micro-fluid cells," Optics Letters, vol. 42, no. 11, pp. 2157-2160, 2017.
[32]
L. Jablonka et al., "Formation of nickel germanides from Ni layers with thickness below 10 nm," Journal of Vacuum Science & Technology B, vol. 35, no. 2, 2017.
[33]
A. D. Smith et al., "Graphene-based CO2 sensing and its cross-sensitivity with humidity," RSC Advances, vol. 7, no. 36, pp. 22329-22339, 2017.
[34]
S. S. Delekta et al., "Inkjet printed highly transparent and flexible graphene micro-supercapacitors," Nanoscale, vol. 9, no. 21, pp. 6998-7005, 2017.
[35]
M. Ekström et al., "Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide," Journal of Electronic Materials, vol. 46, no. 7, pp. 4478-4484, 2017.
[36]
J. Li et al., "Scalable Fabrication and Integration of Graphene Microsupercapacitors through Full Inkjet Printing," ACS Nano, vol. 11, no. 8, pp. 8249-8256, 2017.
[37]
A. D. Smith et al., "Wafer-Scale Statistical Analysis of Graphene FETs-Part I : Wafer-Scale Fabrication and Yield Analysis," IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3919-3926, 2017.
[38]
A. D. Smith et al., "Wafer-Scale Statistical Analysis of Graphene Field-Effect Transistors-Part II : Analysis of Device Properties," IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3927-3933, 2017.
[39]
S. Hou et al., "550 degrees C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization," IEEE Electron Device Letters, vol. 37, no. 12, pp. 1594-1596, 2016.
[40]
A. Salemi et al., "A Comprehensive Study on the Geometrical Effects in High Power 4H-SiC BJTs," IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 882-887, 2016.
[41]
J. Li, V. Mishukova and M. Östling, "All-solid-state micro-supercapacitors based on inkjet printed graphene electrodes," Applied Physics Letters, vol. 109, no. 12, 2016.
[42]
Y. Illarionov et al., "Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors," Japanese Journal of Applied Physics, vol. 55, no. 4, 2016.
[43]
G. Lobov et al., "Dynamic Manipulation of Optical Anisotropy of Suspended Poly-3-hexylthiophene Nanofibers," Advanced Optical Materials, vol. 4, no. 10, pp. 1651-1656, 2016.
[44]
S. Wagner et al., "Graphene transfer methods for the fabrication of membrane-based NEMS devices," Microelectronic Engineering, vol. 159, pp. 108-113, 2016.
[45]
M. Moeen et al., "Improved designs of Si-based quantum wells and Schottky diodes for IR detection," Thin Solid Films, vol. 613, pp. 19-23, 2016.
[46]
H. Elahipanah et al., "Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High Voltage SiC BJTs and Darlington Transistors," IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4366-4372, 2016.
[47]
A. D. Smith et al., "Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors," ACS Nano, vol. 10, no. 11, pp. 9879-9886, 2016.
[48]
J. Li and M. Ostling, "Precise percolation thresholds of two-dimensional random systems comprising overlapping ellipses," Physica A : Statistical Mechanics and its Applications, vol. 462, pp. 940-950, 2016.
[49]
A. Abedin et al., "Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane," Thin Solid Films, vol. 613, pp. 38-42, 2016.
[50]
G. S. Lobov et al., "Size Impact of Ordered P3HT Nanofibers on Optical Anisotropy," Macromolecular Chemistry and Physics, vol. 217, no. 9, pp. 1089-1095, 2016.
[51]
M. M. Atwa et al., "Trilayer Graphene as a Candidate Material for Phase-Change Memory Applications," MRS Advances, vol. 1, no. 20, pp. 1487-1494, 2016.
[52]
H. Elahipanah et al., "4.5-kV 20-mΩ. cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension," Materials Science Forum, vol. 821, pp. 838-841, 2015.
[53]
H. Elahipanah et al., "5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension," IEEE Electron Device Letters, vol. 36, no. 2, pp. 168-170, 2015.
[54]
I. Z. Mitrovic et al., "Atomic-layer deposited thulium oxide as a passivation layer on germanium," Journal of Applied Physics, vol. 117, no. 21, 2015.
[55]
S. Vaziri et al., "Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors," Nanoscale, vol. 7, no. 30, pp. 13096-13104, 2015.
[56]
J. Li and M. Östling, "Conductivity scaling in supercritical percolation of nanoparticles : not a power law," Nanoscale, vol. 7, no. 8, pp. 3424-3428, 2015.
[57]
L. Lanni et al., "ECL-based SiC logic circuits for extreme temperatures," Materials Science Forum, vol. 821-823, pp. 910-913, 2015.
[58]
M. Östling and B. G. Malm, "Editorial Selected papers from the 15th Ultimate Integration on Silicon (ULIS) conference," Solid-State Electronics, vol. 108, pp. 1-1, 2015.
[59]
G. S. Lobov et al., "Electric field induced optical anisotropy of P3HT nanofibers in a liquid solution," Optical Materials Express, vol. 5, no. 11, pp. 2642-2647, 2015.
[60]
E. Dentoni Litta, P.-E. Hellström and M. Östling, "Enhanced channel mobility at sub-nm EOT by integration of a TmSiO interfacial layer in HfO2/TiN high-k/metal gate MOSFETs," IEEE Journal of the Electron Devices Society, vol. 3, no. 5, pp. 397-404, 2015.
[61]
S. Vaziri et al., "Going ballistic : Graphene hot electron transistors," Solid State Communications, vol. 224, pp. 64-75, 2015.
[62]
Y. Illarionov et al., "Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors : Similarities and Differences," IEEE Transactions on Electron Devices, vol. 62, no. 11, pp. 3876-3881, 2015.
[63]
L. Lanni et al., "Influence of Passivation Oxide Thickness and Device Layout on the Current Gain of SiC BJTs," IEEE Electron Device Letters, vol. 36, no. 1, pp. 11-13, 2015.
[64]
E. D. Litta, P.-E. Hellström and M. Östling, "Integration of TmSiO/HfO2 Dielectric Stack in Sub-nm EOT High-k/Metal Gate CMOS Technology," IEEE Transactions on Electron Devices, vol. 62, no. 3, pp. 934-939, 2015.
[65]
A. Salemi et al., "Investigation of the breakdown voltage in high voltage 4H-SiC BJT with respect to oxide and interface charges," Materials Science Forum, vol. 821-823, pp. 834-837, 2015.
[66]
A. D. Smith et al., "Large scale integration of graphene transistors for potential applications in the back end of the line," Solid-State Electronics, vol. 108, pp. 61-66, 2015.
[67]
M. Olyaei et al., "Low-frequency noise characterization in ultra-low equivalent-oxide-thickness thulium silicate interfacial layer nMOSFETs," IEEE Electron Device Letters, vol. 36, no. 12, pp. 1355-1358, 2015.
[68]
A. Salemi et al., "Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs," IEEE Electron Device Letters, vol. 36, no. 10, pp. 1069-1072, 2015.
[69]
S. K. Del et al., "Optimizing the optical and electrical properties of graphene ink thin films by laser-annealing," Current Opinion in Chemical Engineering, vol. 2, no. 1, 2015.
[70]
G. Lupina et al., "Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene," ACS Nano, vol. 9, no. 5, pp. 4776-4785, 2015.
[71]
A. D. Smith et al., "Resistive graphene humidity sensors with rapid and direct electrical readout," Nanoscale, vol. 7, no. 45, pp. 19099-19109, 2015.
[72]
J. Li and M. Östling, "Scalable Fabrication of 2D Semiconducting Crystals for Future Electronics," Electronics, vol. 4, no. 4, pp. 1033-1061, 2015.
[73]
K. Smedfors, C.-M. Zetterling and M. Östling, "Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC," Materials Science Forum, vol. 821-823, pp. 440-443, 2015.
[74]
E. Dentoni Litta, P.-E. Hellström and M. Östling, "Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs," Solid-State Electronics, vol. 108, pp. 24-29, 2015.
[75]
S. Rodriguez et al., "A Comprehensive Graphene FET Model for Circuit Design," IEEE Transactions on Electron Devices, vol. 61, no. 4, pp. 1199-1206, 2014.
[76]
Y. Y. Illarionov et al., "Bias-temperature instability in single-layer graphene field-effect transistors," Applied Physics Letters, vol. 105, no. 14, pp. 143507, 2014.
[77]
J. Xia et al., "Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor," Materials Science Forum, vol. 778-780, pp. 549-552, 2014.
[78]
K. Smedfors et al., "Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from-40 degrees C to 500 degrees C," Materials Science Forum, vol. 778-780, pp. 681-684, 2014.
[79]
S. Kataria et al., "Chemical vapor deposited graphene : From synthesis to applications," Physica Status Solidi (a) applications and materials science, vol. 211, no. 11, pp. 2439-2449, 2014.
[80]
A. Eklund et al., "Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field," Applied Physics Letters, vol. 104, no. 9, pp. 092405, 2014.
[81]
J. Luo et al., "Effects of carbon pre-silicidation implant into Si substrate on NiSi," Microelectronic Engineering, vol. 120, pp. 178-181, 2014.
[82]
E. Dentoni Litta et al., "Electrical characterization of thulium silicate interfacial layers for integration in high-k/metal gate CMOS technology," Solid-State Electronics, vol. 98, pp. 20-25, 2014.
[83]
A. Salemi et al., "Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC," Materials Science Forum, vol. 778-780, pp. 836-840, 2014.
[84]
G. Jayakumar et al., "Fabrication and characterization of silicon nanowires using STL for biosensing applications," INT CONF ULTI INTEGR, pp. 109-112, 2014.
[85]
J. Li, M. C. Lemme and M. Östling, "Inkjet Printing of 2D Layered Materials," ChemPhysChem, vol. 15, no. 16, pp. 3427-3434, 2014.
[86]
J. Li et al., "Inkjet Printing of MoS2," Advanced Functional Materials, vol. 24, no. 41, pp. 6524-6531, 2014.
[87]
L. Lanni et al., "Lateral p-n-p Transistors and Complementary SiC Bipolar Technology," IEEE Electron Device Letters, vol. 35, no. 4, pp. 428-430, 2014.
[88]
C. W. Liu, M. Östling and J. B. Hannon, "New materials for post-Si computing," MRS bulletin, vol. 39, no. 8, pp. 658-662, 2014.
[89]
L. Lanni et al., "SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs," Materials Science Forum, vol. 778-780, pp. 1005-1008, 2014.
[90]
G. Jayakumar et al., "Silicon nanowires integrated with CMOS circuits for biosensing application," Solid-State Electronics, vol. 98, pp. 26-31, 2014.
[91]
S. Rodriguez et al., "Static Nonlinearity in Graphene Field Effect Transistors," IEEE Transactions on Electron Devices, vol. 61, no. 8, pp. 3001-3003, 2014.
[92]
J. Luo et al., "Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements," Microelectronic Engineering, vol. 120, pp. 174-177, 2014.
[93]
A. Smith et al., "Wafer Scale Graphene Transfer for Back End of the Line Device Integration," INT CONF ULTI INTEGR, pp. 29-32, 2014.
[94]
L. Lanni et al., "500 degrees C Bipolar Integrated OR/NOR Gate in 4H-SiC," IEEE Electron Device Letters, vol. 34, no. 9, pp. 1091-1093, 2013.
[95]
L. Lanni et al., "A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits," Journal of Microelectronics and Electronic Packaging, vol. 10, no. 4, pp. 155-162, 2013.
[96]
S. Vaziri et al., "A Graphene-Based Hot Electron Transistor," Nano letters (Print), vol. 13, no. 4, pp. 1435-1439, 2013.
[97]
S. Vaziri et al., "A manufacturable process integration approach for graphene devices," Solid-State Electronics, vol. 84, pp. 185-190, 2013.
[98]
A. Salemi et al., "Area-optimized JTE simulations for 4.5 kV non ion-implanted sic BJT," Materials Science Forum, vol. 740-742, pp. 974-977, 2013.
[99]
M. Moeen et al., "Characterization of SiGe/Si multi-quantum wells for infrared sensing," Applied Physics Letters, vol. 103, no. 25, pp. 251609, 2013.
[100]
J. Li et al., "Efficient inkjet printing of graphene," Advanced Materials, vol. 25, no. 29, pp. 3985-3992, 2013.
[101]
A. Smith et al., "Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes," Nano letters (Print), vol. 13, no. 7, pp. 3237-3242, 2013.
[102]
A. Jamshidi et al., "Growth of GeSnSiC layers for photonic applications," Surface & Coatings Technology, vol. 230, pp. 106-110, 2013.
[103]
E. Dentoni Litta et al., "High-Deposition-Rate Atomic Layer Deposition of Thulium Oxide from TmCp3 and H2O," Journal of the Electrochemical Society, vol. 160, no. 11, pp. D538-D542, 2013.
[104]
L. Lanni et al., "High-temperature characterization of 4H-SiC darlington transistors for low voltage applications," Materials Science Forum, vol. 740-742, pp. 966-969, 2013.
[105]
I. Z. Mitrovic et al., "Interface engineering of Ge using thulium oxide : Band line-up study," Microelectronic Engineering, vol. 109, pp. 204-207, 2013.
[106]
J. Li and M. Östling, "Percolation thresholds of two-dimensional continuum systems of rectangles," Physical Review E. Statistical, Nonlinear, and Soft Matter Physics, vol. 88, no. 1, pp. 012101, 2013.
[107]
A. D. Smith et al., "Pressure sensors based on suspended graphene membranes," Solid-State Electronics, vol. 88, pp. 89-94, 2013.
[108]
J. Li and M. Östling, "Prevention of graphene restacking for performance boost of supercapacitors-a review," Crystals, vol. 3, no. 1, pp. 163-190, 2013.
[109]
H. Elahipanah et al., "Process variation tolerant 4H-SiC power devices utilizing trench structures," Materials Science Forum, vol. 740-742, pp. 809-812, 2013.
[110]
V. Gudmundsson et al., "Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model," Solid-State Electronics, vol. 79, pp. 172-178, 2013.
[111]
E. Dentoni Litta et al., "Thulium silicate interfacial layer for scalable high-k/metal gate stacks," IEEE Transactions on Electron Devices, vol. 60, no. 10, pp. 3271-3276, 2013.
[112]
J. Li et al., "A simple route towards high-concentration surfactant-free graphene dispersions," Carbon, vol. 50, no. 8, pp. 3113-3116, 2012.
[113]
M. M. Naiini et al., "ALD high-k layer grating couplers for single and double slot on-chip SOI photonics," Solid-State Electronics, vol. 74, pp. 58-63, 2012.
[114]
L. Lanni et al., "Bipolar integrated OR-NOR gate in 4H-SiC," Materials Science Forum, vol. 717-720, pp. 1257-1260, 2012.
[115]
J. Li and M. Östling, "Corrected finite-size scaling in percolation," Physical Review E. Statistical, Nonlinear, and Soft Matter Physics, vol. 86, no. 4, pp. 040105, 2012.
[116]
V. Gudmundsson, P.-E. Hellström and M. Östling, "Error Propagation in Contact Resistivity Extraction Using Cross-Bridge Kelvin Resistors," IEEE Transactions on Electron Devices, vol. 59, no. 6, pp. 1585-1591, 2012.
[117]
C.-M. Zetterling et al., "Future high temperature applications for SiC integrated circuits," Physica Status Solidi. C, Current topics in solid state physics, vol. 9, no. 7, pp. 1647-1650, 2012.
[118]
M. Kolahdouz, M. Östling and H. H. Radamson, "High performance infra-red detectors based on Si/SiGe multilayers quantum structure," Materials Science & Engineering : B. Solid-state Materials for Advanced Technology, vol. 177, no. 17, pp. 1563-1566, 2012.
[119]
C. Henkel et al., "Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks," Solid-State Electronics, vol. 74, pp. 7-12, 2012.
[120]
B. Buono et al., "Investigation of Current Gain Degradation in 4H-SiC Power BJTs," Materials Science Forum, vol. 717-720, pp. 1131-1134, 2012.
[121]
M. Kolahdouz et al., "Kinetic Modeling of Low Temperature Epitaxy Growth of SiGe Using Disilane and Digermane," Journal of the Electrochemical Society, vol. 159, no. 5, pp. H478-H481, 2012.
[122]
M. Olyaei et al., "Low-Frequency Noise in High-k LaLuO3/TiN MOSFETs," Solid-State Electronics, vol. 78, no. SI, pp. 51-55, 2012.
[123]
S. Rodriguez et al., "RF Performance Projections of Graphene FETs vs. Silicon MOSFETs," ECS Transactions, vol. 1, no. 5, pp. Q39-Q41, 2012.
[124]
J. Li et al., "Threshold of hierarchical percolating systems," Physical Review E. Statistical, Nonlinear, and Soft Matter Physics, vol. 85, no. 2, pp. 021109, 2012.
[125]
W. Mehr et al., "Vertical Graphene Base Transistor," IEEE Electron Device Letters, vol. 33, no. 5, pp. 691-693, 2012.
[126]
S. Vaziri, M. Östling and M. C. Lemme, "A Hysteresis-Free High-k Dielectric and Contact Resistance Considerations for Graphene Field Effect Transistors," ECS Transactions, vol. 41, no. 7, pp. 165-171, 2011.
[127]
B. Buono et al., "Current Gain Degradation in 4H-SiC Power BJTs," Materials Science Forum, vol. 679-680, pp. 702-705, 2011.
[128]
[129]
R. Ghandi et al., "High Voltage (2.8 kV) Implantation-free 4H-SiC BJTs with Long-TermStability of the Current Gain," IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2665-2669, 2011.
[130]
R. Ghandi et al., "High Voltage, Low On-resistance 4H-SiC BJTs with Improved Junction Termination Extension," Materials Science Forum, vol. 679-680, pp. 706-709, 2011.
[131]
R. Ghandi et al., "High current-gain implantation-free 4H-SiC Monolithic Darlington Transistor," IEEE Electron Device Letters, vol. 32, no. 2, pp. 188-190, 2011.
[132]
M. Östling, "High power devices in wide bandgap semiconductors," SCI CHINA-INF SCI, vol. 54, no. 5, pp. 1087-1093, 2011.
[133]
L. Donetti et al., "Hole effective mass in silicon inversion layers with different substrate orientations and channel directions," Journal of Applied Physics, vol. 110, no. 6, pp. 063711, 2011.
[134]
J. Li et al., "Ink-jet printed thin-film transistors with carbon nanotube channels shaped in long strips," Journal of Applied Physics, vol. 109, no. 8, 2011.
[135]
L. Lanni et al., "Measurements and simulations of lateral PNP transistors in a SiC NPN BJT technology for high temperature integrated circuits," Materials Science Forum, vol. 679-680, pp. 758-761, 2011.
[136]
B. Buono et al., "Modeling and Characterization of the ON-Resistance in 4H-SiC Power BJTs," IEEE Transactions on Electron Devices, vol. 58, no. 7, pp. 2081-2087, 2011.
[137]
J. Luo et al., "On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain," IEEE Transactions on Electron Devices, vol. 58, no. 7, pp. 1898-1906, 2011.
[138]
S. M. Thomas et al., "On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors," Journal of Applied Physics, vol. 110, no. 12, pp. 124503, 2011.
[139]
R. Ghandi et al., "Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation," IEEE Electron Device Letters, vol. 32, no. 5, pp. 596-598, 2011.
[140]
R. Ghandi et al., "Surface-passivation effects on the performance of 4H-SiC BJTs," IEEE Transactions on Electron Devices, vol. 58, pp. 259-265, 2011.
[141]
M. Kolahdouz et al., "The performance improvement evaluation for SiGe-based IR detectors," Solid-State Electronics, vol. 62, no. 1, pp. 72-76, 2011.
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