Publikationer av Anders Hallén
Refereegranskade
Artiklar
[1]
A. Siddiqui et al., "Carrier removal rates in 4H–SiC power diodes : A predictive analytical model," Materials Science in Semiconductor Processing, vol. 167, 2023.
[2]
M. Zubkins et al., "Deposition of Ga2O3 thin films by liquid metal target sputtering," Vacuum, vol. 209, s. 111789, 2023.
[3]
T. T. Tran et al., "High hole mobility and non-localized states in amorphous germanium," APL Materials, vol. 11, no. 4, s. 041115, 2023.
[4]
A. Metreveli et al., "In Situ Gamma Irradiation Effects on 4H-SiC Bipolar Junction Transistors," IEEE Transactions on Nuclear Science, vol. 70, no. 12, s. 2597-2604, 2023.
[5]
H. M. Ayedh et al., "Carbon vacancy control in p(+)-n silicon carbide diodes for high voltage bipolar applications," Journal of Physics D : Applied Physics, vol. 54, no. 45, 2021.
[6]
M. Usman et al., "Comparative study of proton and helium elastic scatterings from nitrogen in GaN," Materials Science in Semiconductor Processing, vol. 121, 2021.
[7]
M. Hammar, A. Hallén och S. Lourdudoss, "Compound Semiconductors," Physica status solidi. B, Basic research, vol. 258, no. 2, 2021.
[8]
D. Rwegasira et al., "Energy trading and control of islanded DC microgrid using multi-agent systems," Multiagent and Grid Systems, vol. 17, no. 2, s. 113-128, 2021.
[9]
H. Khelidj et al., "Ge(Sn) growth on Si(001) by magnetron sputtering," Materials Today Communications, vol. 26, 2021.
[10]
M. K. Linnarsson, L. Vines och A. Hallén, "Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC," Journal of Applied Physics, vol. 130, no. 7, 2021.
[11]
S. Khartsev et al., "Reverse‐Bias Electroluminescence in Er‐Doped β‐Ga 2 O 3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition," Physica Status Solidi (a) applications and materials science, vol. 219, no. 4, s. 2100610-2100610, 2021.
[12]
D. Johannesson et al., "Static and Dynamic Performance Prediction of Ultra-High-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors," IEEE transactions on power electronics, vol. 36, no. 5, s. 5874-5891, 2021.
[13]
A. Azarov et al., "Effects of annealing on photoluminescence and defect interplay in ZnO bombarded by heavy ions : Crucial role of the ion dose," Journal of Applied Physics, vol. 127, no. 2, 2020.
[14]
S. Khartsev et al., "High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition," Physica status solidi. B, Basic research, vol. 258, no. 2, s. 2000362-2000362, 2020.
[15]
K. Tia et al., "Modelling the static on-state current voltage characteristics for a 10 kV 4H-SiC PiN diode," Materials Science in Semiconductor Processing, vol. 115, 2020.
[16]
K. Tian et al., "An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss," IEEE Transactions on Electron Devices, vol. 66, no. 5, s. 2307-2313, 2019.
[17]
M. K. Linnarsson et al., "Channeling implantations of p-type dopants into 4H-SiC at different tempertures," Materials Science Forum, vol. 963, s. 382-385, 2019.
[18]
K. Tian et al., "Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature," IEEE Transactions on Electron Devices, vol. 66, no. 10, s. 4279-4286, 2019.
[19]
A. Azarov et al., "Defect annealing kinetics in ZnO implanted with Zn substituting elements : Zn interstitials and Li redistribution," Journal of Applied Physics, vol. 125, no. 7, 2019.
[20]
S. Majdi et al., "High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors," Review of Scientific Instruments, vol. 90, no. 6, 2019.
[21]
M. Linnarsson, A. Hallén och L. Vines, "Influence of a thin amorthous layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC," Applied Physics A : Materials Science & Processing, vol. 125, no. 12, 2019.
[22]
M. Linnarsson, A. Hallén och L. Vines, "Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC," Semiconductor Science and Technology, vol. 34, s. 1-10, 2019.
[23]
J. Woerle et al., "Interaction of low-energy muons with defect profiles in proton-irradiated Si and 4H-SiC," Physical Review B, vol. 100, no. 11, 2019.
[24]
T. Luo et al., "Combined effect of Pt and Walloying elements on Ni-silicide formation," Journal of Applied Physics, vol. 123, no. 12, 2018.
[25]
S. S. Suvanam et al., "Extreme radiation hard thin film CZTSSe solar cell," Solar Energy Materials and Solar Cells, vol. 185, s. 16-20, 2018.
[26]
T. Chulapakorn et al., "Impact of H-uptake by forming gas annealing and ion implantation on photoluminescence of Si-nanoparticles," Physica Status Solidi (a) applications and materials science, vol. 215, no. 3, 2018.
[27]
S. S. Suvanam et al., "Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC," Applied Surface Science, vol. 433, s. 108-115, 2018.
[28]
M. Usman et al., "Improving the quality of Al2O3/4H-SiC interface for device applications," Materials Science in Semiconductor Processing, vol. 81, s. 118-121, 2018.
[29]
T. Chulapakorn et al., "Luminescence of silicon nanoparticles from oxygen implanted silicon," Materials Science in Semiconductor Processing, vol. 86, s. 18-22, 2018.
[30]
C.-M. Zetterling et al., "Bipolar integrated circuits in SiC for extreme environment operation," Semiconductor Science and Technology, vol. 32, no. 3, 2017.
[31]
A. Azarov et al., "Extended defects in ZnO : Efficient sinks for point defects," Applied Physics Letters, vol. 110, no. 2, 2017.
[32]
T. Chulapakorn et al., "Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2," Nanotechnology, vol. 28, 2017.
[33]
M. K. Linnarsson et al., "Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering," Journal of Physics D : Applied Physics, vol. 50, no. 49, 2017.
[34]
M. Rubel et al., "Metallic mirrors for plasma diagnosis in current and future reactors : tests for ITER and DEMO," Physica Scripta, vol. T170, 2017.
[35]
H. M. Ayedh et al., "Thermodynamic equilibration of the carbon vacancy in 4H-SiC : A lifetime limiting defect," Journal of Applied Physics, vol. 122, no. 2, 2017.
[36]
L. H. Karlsson et al., "Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC," Materials letters (General ed.), vol. 181, s. 325-327, 2016.
[37]
S. S. Suvanam et al., "High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits," IEEE Transactions on Nuclear Science, 2016.
[38]
A. Garcia-Carrasco et al., "Impact of helium implantation and ion-induced damage on reflectivity of molybdenum mirrors," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, 2016.
[39]
A. Hallén och M. K. Linnarsson, "Ion implantation technology for silicon carbide," Surface & Coatings Technology, vol. 306, s. 190-193, 2016.
[40]
T. Chulapakorn et al., "MeV ion irradiation effects on the luminescence properties of Si-implanted SiO2-thin films," Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 13, no. 10-12, s. 921-926, 2016.
[41]
M. Usman et al., "Stoichiometry of the ALD-Al2O3/4H-SiC interface by synchrotron-based XPS," Journal of Physics D : Applied Physics, vol. 49, no. 25, 2016.
[42]
S. S. Suvanam et al., "4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption," Journal of Applied Physics, vol. 117, no. 10, 2015.
[43]
H. M. Ayedh et al., "Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures," Applied Physics Letters, vol. 107, no. 25, 2015.
[44]
H. M. Ayedh, A. Hallén och B. G. Svensson, "Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation : Influence of the ion species," Journal of Applied Physics, vol. 118, no. 17, 2015.
[45]
M. Usman, A. Hallen och A. Nazir, "Ion implantation induced nitrogen defects in GaN," Journal of Physics D : Applied Physics, vol. 48, no. 45, 2015.
[46]
A. Zamani et al., "Magnetic properties of amorphous Fe93Zr7 films : Effect of light ion implantation," Journal of Applied Physics, vol. 117, no. 14, 2015.
[47]
A. Azarov et al., "Optical activity and defect/dopant evolution in ZnO implanted with Er," Journal of Applied Physics, vol. 118, no. 12, 2015.
[48]
T. Chulapakorn et al., "Si-nanoparticle synthesis using ion implantation and MeV ion irradiation," Physica Status Solidi (C) Current Topics in Solid State Physics, 2015.
[49]
S. S. Suvanam et al., "Tailoring the interface between dielectric and 4H-SiC by ion implantation," Materials Science Forum, vol. 821-823, s. 488-491, 2015.
[50]
P. C. Lansåker et al., "Characterization of gold nanoparticle films : Rutherford backscattering spectroscopy, scanning electron microscopy with image analysis, and atomic force microscopy," AIP Advances, vol. 4, no. 10, s. 107101, 2014.
[51]
A. Y. Azarov et al., "Effect of implanted species on thermal evolution of ion-induced defects in ZnO," Journal of Applied Physics, vol. 115, no. 7, s. 073512, 2014.
[52]
S. S. Suvanam et al., "Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates," IEEE Transactions on Nuclear Science, vol. 61, no. 4, s. 1772-1776, 2014.
[53]
A. Salemi et al., "Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC," Materials Science Forum, vol. 778-780, s. 836-840, 2014.
[54]
H. M. Ayedh et al., "Formation of carbon vacancy in 4H silicon carbide during high-temperature processing," Journal of Applied Physics, vol. 115, no. 1, s. 012005, 2014.
[55]
T. Kobayashi et al., "Ion-stimulated desorption in the medium-energy regime," Japanese Journal of Applied Physics, vol. 53, no. 6, s. 060305, 2014.
[56]
R. Moubah et al., "Origin of the anomalous temperature dependence of coercivity in soft ferromagnets," Journal of Applied Physics, vol. 116, no. 5, s. 053906, 2014.
[57]
A. Hallén et al., "Passivation of SiC device surfaces by aluminum oxide," IOP Conference Series : Materials Science and Engineering, vol. 56, no. 1, s. 012007, 2014.
[58]
A. Hallén och G. Moschetti, "RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 332, s. 172-175, 2014.
[59]
F. Issa et al., "Radiation silicon carbide detectors based on ion implantation of boron," IEEE Transactions on Nuclear Science, vol. 61, no. 4, s. 2105-2111, 2014.
[60]
M. K. Linnarsson och A. Hallén, "Sodium diffusion in 4H-SiC," APL Materials, vol. 2, no. 9, s. 096106, 2014.
[61]
M. K. Linnarsson et al., "ToF-MEIS stopping measurements in thin SiC films," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 332, s. 130-133, 2014.
[62]
D. Primetzhofer et al., "Ultra-thin film and interface analysis of high-k dielectric materials employing Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS)," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 332, s. 212-215, 2014.
[63]
S.-Y. Li et al., "Bandgap widening in thermochromic Mg-doped VO2 thin films : Quantitative data based on optical absorption," Applied Physics Letters, vol. 103, no. 16, s. 161907, 2013.
[64]
R. Nipoti et al., "Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC," Journal of Materials Research, vol. 28, no. 1, s. 17-22, 2013.
[65]
A. Jamshidi et al., "Growth of GeSnSiC layers for photonic applications," Surface & Coatings Technology, vol. 230, s. 106-110, 2013.
[66]
P. D. Edmondson et al., "Helium bubble distributions in a nanostructured ferritic alloy," Journal of Nuclear Materials, vol. 434, no. 1-3, s. 210-216, 2013.
[67]
M. Usman, C. Henkel och A. Hallén, "HfO2/Al2O3 bilayered high-k dielectric for passivation and gate insulator in 4H-SiC devices," ECS Journal of Solid State Science and Technology, vol. 2, no. 8, s. N3087-N3091, 2013.
[68]
E. Dentoni Litta et al., "High-Deposition-Rate Atomic Layer Deposition of Thulium Oxide from TmCp3 and H2O," Journal of the Electrochemical Society, vol. 160, no. 11, s. D538-D542, 2013.
[69]
Y. Song et al., "Molecular beam epitaxy growth of InSb1-xBix thin films," Journal of Crystal Growth, vol. 378, s. 323-328, 2013.
[70]
M. Usman, M. Nawaz och A. Hallén, "Position-dependent bulk traps and carrier compensation in 4H-SiC bipolar junction transistors," IEEE Transactions on Electron Devices, vol. 60, no. 1, s. 178-185, 2013.
[71]
R. Moubah et al., "Soft Room-Temperature Ferromagnetism of Carbon-Implanted Amorphous Fe93Zr7 Films," APPL PHYS EXPRESS, vol. 6, no. 5, s. 053001, 2013.
[72]
G. Moschetti et al., "True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications," Solid-State Electronics, vol. 79, s. 268-273, 2013.
[73]
A. Zamani et al., "Tuning magnetic properties by hydrogen implantation in amorphous Fe100-xZrx thin films," Journal of Magnetism and Magnetic Materials, vol. 346, s. 138-141, 2013.
[74]
C. M. Parish et al., "A Multi-Technique Approach to Understand Radiation-Tolerant Nanostructures," Microscopy and Microanalysis, vol. 18, no. S2, s. 1430-1431, 2012.
[75]
A. Y. Azarov et al., "Annealing of ion implanted CdZnO," Journal of Physics D : Applied Physics, vol. 45, no. 23, s. 235304, 2012.
[76]
A. Yu. Azarov et al., "Damage accumulation and annealing behavior in high fluence implanted MgZnO," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 272, s. 426-429, 2012.
[77]
A. Audren, A. Hallén och G. Possnert, "Damage recovery in the oxygen sublattice of ZnO by post-implantation annealing," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 272, s. 418-421, 2012.
[78]
Y. Song et al., "Growth of GaSb1-xBix by molecular beam epitaxy," Journal of Vacuum Science & Technology B, vol. 30, no. 2, s. 02B114, 2012.
[79]
H. L. Liang et al., "Growth of single-phase Mg0.3Zn0.7O films suitable for solar-blind optical devices on RS-MgO substrates," Thin Solid Films, vol. 520, no. 6, s. 1705-1708, 2012.
[80]
M. Usman, B. Buono och A. Hallén, "Impact of Ionizing Radiation on the SiO2/SiC Interface in 4H-SiC BJTs," IEEE Transactions on Electron Devices, vol. 59, no. 12, s. 3371-3376, 2012.
[81]
J. -. Lee et al., "Local anodic oxidation of phosphorus-implanted 4H-SiC by atomic force microscopy," Materials Science Forum, vol. 717-720, s. 905-908, 2012.
[82]
M. K. Linnarsson och A. Hallén, "Manganese in silicon carbide," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 273, s. 127-130, 2012.
[83]
M. -. Kang et al., "Metal work-function and doping-concentration dependent barrier height of Ni-contacts to 4H-SiC with metal-embedded nano-particles," Materials Science Forum, vol. 717-720, s. 857-860, 2012.
[84]
M. K. Linnarsson et al., "New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector," Review of Scientific Instruments, vol. 83, no. 9, s. 095107, 2012.
[85]
G. Moschetti et al., "Planar InAs/AlSb HEMTs With Ion-Implanted Isolation," IEEE Electron Device Letters, vol. 33, no. 4, s. 510-512, 2012.
[86]
J. M. Wikberg et al., "Annealing effects on structural and magnetic properties of Co implanted ZnO single crystals," Journal of Applied Physics, vol. 109, no. 8, s. 083918, 2011.
[87]
P. T. Neuvonen et al., "Defect evolution and impurity migration in Na-implanted ZnO," Physical Review B. Condensed Matter and Materials Physics, vol. 84, no. 20, s. 205202, 2011.
[88]
P. D. Edmondson et al., "Helium entrapment in a nanostructured ferritic alloy," Scripta Materialia, vol. 65, no. 8, s. 731-734, 2011.
[89]
O. Gustafsson et al., "Long-wavelength infrared quantum-dot based interband photodetectors," Infrared physics & technology, vol. 54, no. 3, s. 287-291, 2011.
[90]
R. Nipoti et al., "Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC," APPL PHYS EXPRESS, vol. 4, no. 11, s. 111301, 2011.
[91]
M. Usman och A. Hallén, "Radiation-Hard Dielectrics for 4H-SiC : A Comparison Between SiO(2) and Al(2)O(3)," IEEE Electron Device Letters, vol. 32, no. 12, s. 1653-1655, 2011.
[92]
K. Gulbinas et al., "Surface Recombination Investigation in Thin 4H-SiC Layers," Materials Science-Medziagotyra, vol. 17, no. 2, s. 119-124, 2011.
[93]
A. Yu. Azarov et al., "Thermally induced surface instability in ion-implanted Mg(x)Zn(1-x)O films," Physical Review B. Condensed Matter and Materials Physics, vol. 84, no. 1, s. 014114, 2011.
[94]
M. Usman et al., "Toward the Understanding of Stacked Al-Based High-k Dielectrics for Passivation of 4H-SiC Devices," Journal of the Electrochemical Society, vol. 158, no. 1, s. H75-H79, 2011.
[95]
M. Usman et al., "Annealing of ion implanted 4H-SiC in the temperature range of 100-800 degrees C analysed by ion beam techniques," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 268, no. 11-12, s. 2083-2085, 2010.
[96]
A. Azarov et al., "Dopant incorporation in thin strained Si layers implanted with Sb," Thin Solid Films, vol. 518, no. 9, s. 2474-2477, 2010.
[97]
M. Usman et al., "Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs," Physica Scripta, vol. T140, s. 014012, 2010.
[98]
A. Yu. Azarov et al., "Effect of composition on damage accumulation in ternary ZnO-based oxides implanted with heavy ions," Journal of Applied Physics, vol. 108, no. 3, s. 033509, 2010.
[99]
A. Hallén et al., "Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors," IEEE Electron Device Letters, vol. 31, no. 7, s. 707-709, 2010.
[100]
M. K. Linnarsson, A. Audren och A. Hallén, "Manganese in 4H-SiC," Materials Science Forum, vol. 645-648, s. 701-704, 2010.
[101]
R. Spohr et al., "Stroke Asymmetry of Tilted Superhydrophobic Ion Track Textures," Langmuir, vol. 26, no. 9, s. 6790-6796, 2010.
[102]
A. Yu. Azarov et al., "Structural damage in ZnO bombarded by heavy ions," Vacuum, vol. 84, no. 8, s. 1058-1061, 2010.
[103]
A. Wolska et al., "Study of the Local Environment of Mn Ions Implanted in GaSb," Acta Physica Polonica. A, vol. 117, no. 2, s. 286-292, 2010.
[104]
A. Azarov et al., "Effect of collision cascade density on radiation damage in SiC," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 267, no. 8-9, s. 1247-1250, 2009.
[105]
M. Usman et al., "Electrical and structural characterization of ion implanted GaN," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 267, no. 8-9, s. 1561-1563, 2009.
[106]
M. Wolborski et al., "Improved properties of AION/4H-SiC interface for passivation studies," Materials Science Forum, vol. 600-603, s. 763-766, 2009.
[107]
B. Emmoth et al., "In-situ measurements of carbon and deuterium deposition using the fast reciprocating probe in TEXTOR," Journal of Nuclear Materials, vol. 390-91, s. 179-182, 2009.
[108]
P. T. Neuvonen et al., "Interaction between Na and Li in ZnO," Applied Physics Letters, vol. 95, no. 24, 2009.
[109]
Z. L. Liu et al., "Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers," Journal of Crystal Growth, vol. 311, no. 18, s. 4356-4359, 2009.
[110]
A. Pinos et al., "Time-resolved luminescence studies of proton-implanted GaN," Applied Physics Letters, vol. 95, no. 11, 2009.
[111]
M. Gabrysch et al., "Compensation in boron-doped CVD diamond," , vol. 205, no. 9, s. 2190-2194, 2008.
[112]
A. Y. Azarov et al., "Dopant distribution in high fluence Fe implanted GaN," Journal of Applied Physics, vol. 104, no. 5, 2008.
[113]
J. Wong-Leung et al., "Ion implantation in 4H-SiC," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 266, no. 8, s. 1367-1372, 2008.
[114]
P. Petersson et al., "Mapping of hydrogen isotopes with a scanning nuclear microprobe," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 266, no. 10, s. 2429-2432, 2008.
[115]
S. Intarasiri et al., "Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 257, s. 195-198, 2007.
[116]
M. Wolborski et al., "Characterization of HfO films deposited on 4H-SiC by atomic layer deposition," Journal of Applied Physics, vol. 101, no. 12, s. 124105, 2007.
[117]
S. Intarasiri et al., "Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si," Applied Surface Science, vol. 253, no. 11, s. 4836-4842, 2007.
[118]
I. Sychugov et al., "Effect of photonic bandgap on luminescence from silicon nanocrystals," Optics Letters, vol. 32, no. 13, s. 1878-1880, 2007.
[119]
S. Intarasiri et al., "Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide," Journal of Applied Physics, vol. 101, no. 8, 2007.
[120]
M. Wolborski et al., "Aluminium nitride deposition on 4H-SiC by means of physical vapour deposition," Thin Solid Films, vol. 515, s. 456-459, 2006.
[121]
A. Hallén et al., "Annealing of Al implanted 4H silicon carbide," Physica Scripta, vol. T126, s. 37-40, 2006.
[122]
M. Wolborski et al., "Characterisation of the Al2O3 films deposited by ultrasonic spray pyrolysis and atomic layer deposition methods for passivation of 4H–SiC devices," Microelectronics and reliability, vol. 46, s. 743-755, 2006.
[123]
S. Intarasiri et al., "Characterization of the crystalline quality of beta-SiC formed by ion beam synthesis," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 249, s. 851-855, 2006.
[124]
A. Galeckas et al., "Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC," Physical Review B. Condensed Matter and Materials Physics, vol. 74, no. 23, 2006.
[125]
A. Suchodolskis et al., "Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy," Thin Solid Films, vol. 515, no. 2, s. 611-614, 2006.
[126]
P. O. A. Persson et al., "Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide," Journal of Applied Physics, vol. 100, no. 5, 2006.
[127]
S. Intarasiri et al., "RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 249, s. 859-864, 2006.
[128]
L. Vines et al., "Scanning probe microscopy of single Au ion implants in Si," Materials science & engineering. C, biomimetic materials, sensors and systems, vol. 26, no. 07-maj, s. 782-787, 2006.
[129]
A. Suchodolskis et al., "Scanning spreading resistance microscopy of shallow doping profiles in silicon," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 253, no. 02-jan, s. 141-144, 2006.
[130]
L. Vines et al., "Visualization of MeV ion impacts in Si using scanning capacitance microscopy," Physical Review B. Condensed Matter and Materials Physics, vol. 73, no. 8, 2006.
[131]
T. M. Borseth et al., "Annealing study of Sb+ and Al+ ion-implanted ZnO," Superlattices and Microstructures, vol. 38, no. 4-6, s. 464-471, 2005.
[132]
H. Kortegaard Nielsen, A. Hallén och B. G. Svensson, "Capacitance transient study of the metastable M center in n-type 4H-SiC.," Physical Review B. Condensed Matter and Materials Physics, vol. 72, no. 8, 2005.
[133]
G. Alfieri et al., "Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide," Journal of Applied Physics, vol. 98, no. 11, 2005.
[134]
A. Razpet et al., "Fabrication of high-density ordered nanoarrays in silicon dioxide by MeV ion track lithography," Journal of Applied Physics, vol. 97, no. 4, 2005.
[135]
J. Slotte et al., "Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC," Journal of Applied Physics, vol. 97, no. 3, 2005.
[136]
T. V. Blank et al., "Temperature dependence of the photoelectric conversion quantum efficiency of 4H-SiC Schottky UV photodetectors," Semiconductor Science and Technology, vol. 20, no. 8, s. 710-715, 2005.
[137]
Y. Zhang et al., "Annealing behavior of Al-implantation-induced disorder in 4H-SiC," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 219, s. 647-651, 2004.
[138]
D. M. Martin et al., "Bistable defect in mega-electron-volt proton implanted 4H silicon carbide," Applied Physics Letters, vol. 84, no. 10, s. 1704-1706, 2004.
[139]
B. Y. Ber et al., "Determination of nitrogen in silicon carbide by secondary ion mass spectrometry," Journal of Analytical Chemistry, vol. 59, no. 3, s. 250-254, 2004.
[140]
Y. Zhang et al., "Effects of implantation temperature on damage accumulation in Al-implanted 4H-SiC," Journal of Applied Physics, vol. 95, no. 8, s. 4012-4018, 2004.
[141]
M. L. David et al., "Electrically active defects in irradiated 4H-SiC," Journal of Applied Physics, vol. 95, no. 9, s. 4728-4733, 2004.
[142]
M. S. Janson et al., "Electronic stopping cross sections in silicon carbide for low-velocity ions with 1 <= Z(1)<= 15," Journal of Applied Physics, vol. 96, no. 1, s. 164-169, 2004.
[143]
A. M. Ivanov et al., "High-resolution short range ion detectors based on 4H-SiC films," Technical physics letters, vol. 30, no. 7, s. 575-577, 2004.
[144]
M. S. Janson et al., "Hydrogen in the wide bandgap semiconductor silicon carbide," Physica Scripta, vol. T108, s. 99-112, 2004.
[145]
A. Razpet et al., "Ion transmission and characterization of ordered nanoporous alumina," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 222, no. 04-mar, s. 593-600, 2004.
[146]
E. V. Kalinina et al., "Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions," Semiconductors (Woodbury, N.Y.), vol. 38, no. 10, s. 1187-1191, 2004.
[147]
M. S. Janson et al., "Vacancy-related defect distributions in B-11-, N-14-, and Al-27-implanted 4H-SiC : Role of channeling," Journal of Applied Physics, vol. 95, no. 1, s. 57-63, 2004.
[148]
H. Kortegaard Nielsen et al., "Annealing study of a bistable defect in proton-implanted n-type 4H-SiC," Physica. B, Condensed matter, vol. 340, s. 743-747, 2003.
[149]
P. O. A. Persson et al., "Dislocation loop evolution in ion implanted 4H-SiC," Journal of Applied Physics, vol. 93, no. 11, s. 9395-9397, 2003.
[150]
A. Y. Kuznetsov et al., "Dynamic annealing in ion implanted SiC : Flux versus temperature dependence," Journal of Applied Physics, vol. 94, no. 11, s. 7112-7115, 2003.
[151]
E. V. Kalinina et al., "Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers," Semiconductors (Woodbury, N.Y.), vol. 37, no. 10, s. 1229-1233, 2003.
[152]
Y. Zhang et al., "Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC," Journal of Applied Physics, vol. 93, no. 4, s. 1954-1960, 2003.
[153]
P. Leveque et al., "Identification of hydrogen related defects in proton implanted float-zone silicon," European Physical Journal : Applied physics, vol. 23, no. 1, s. 5-9, 2003.
[154]
E. V. Monakhov et al., "Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si," Journal of Physics : Condensed Matter, vol. 15, no. 39, s. S2771-S2777, 2003.
[155]
U. Zimmermann et al., "Material defects in 4H-silicon carbide diodes," Journal of Applied Physics, vol. 93, no. 1, s. 611-618, 2003.
[156]
J. Osterman et al., "Scanning spreading resistance microscopy of aluminum implanted 4H-SiC," Materials Science & Engineering : B. Solid-state Materials for Advanced Technology, vol. 102, no. 03-jan, s. 128-131, 2003.
[157]
P. Leveque et al., "Vacancy and interstitial depth profiles in ion-implanted silicon.," Journal of Applied Physics, vol. 93, no. 2, s. 871-877, 2003.
[158]
J. Osterman, A. Hallén och S. Anand, "Carrier profiling of Al-doped 4H-SiC by scanning spreading resistance microscopy," Applied Physics Letters, vol. 81, no. 16, s. 3004-3006, 2002.
[159]
E. Kalinina et al., "Characterization of Al-implanted 4H SiC high voltage diodes," Physica Scripta, vol. T101, s. 207-210, 2002.
[160]
N. Keskitalo, S. Tiensuu och A. Hallén, "Characterization of hydrophobic bonded silicon wafers," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 186, s. 66-70, 2002.
[161]
W. J. Weber et al., "Damage evolution and recovery in 4H and 6H silicon carbide irradiated with aluminum ions," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 191, s. 514-518, 2002.
[162]
Y. Zhang et al., "Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H-SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis," Journal of Applied Physics, vol. 91, no. 10, s. 6388-6395, 2002.
[163]
A. Hallén och N. Keskitalo, "Defect distributions in silicon implanted with low doses of MeV ions," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 186, s. 344-348, 2002.
[164]
P. Leveque et al., "Dose-rate influence on the defect production in MeV proton-implanted float-zone and epitaxial n-type silicon," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 186, s. 375-379, 2002.
[165]
Y. Zhang et al., "Evolution and recrystallization of buried amorphous layers in A1(2)(2+) implanted 4H-SiC," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 195, no. 04-mar, s. 320-328, 2002.
[166]
E. V. Monakhov et al., "Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si," Physical Review B. Condensed Matter and Materials Physics, vol. 65, no. 23, 2002.
[167]
A. Hallén et al., "Ion implantation of silicon carbide," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 186, s. 186-194, 2002.
[168]
P. O. A. Persson et al., "On the nature of ion implantation induced dislocation loops in 4H-silicon carbide," Journal of Applied Physics, vol. 92, no. 5, s. 2501-2505, 2002.
[169]
G. N. Violina et al., "Photoelectric properties of p(+)-n junctions based on 4H-SiC ion-implanted with aluminum," Semiconductors (Woodbury, N.Y.), vol. 36, no. 6, s. 706-709, 2002.
[170]
P. Pellegrino et al., "Separation of vacancy and interstitial depth profiles in proton- and boron-implanted silicon," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 186, s. 334-338, 2002.
[171]
G. N. Violina et al., "Silicon carbide detectors of high-energy particles," Semiconductors (Woodbury, N.Y.), vol. 36, no. 6, s. 710-713, 2002.
[172]
P. Pellegrino et al., "Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon," Physical Review B. Condensed Matter and Materials Physics, vol. 64, no. 19, 2001.
[173]
M. S. Janson et al., "Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide," Physical Review B. Condensed Matter and Materials Physics, vol. 64, no. 19, 2001.
[174]
M. S. Janson et al., "Hydrogen-boron complex formation and dissociation in 4H-silicon carbide," Applied Surface Science, vol. 184, no. 04-jan, s. 257-262, 2001.
[175]
P. Leveque et al., "Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 174, no. 3, s. 297-303, 2001.
[176]
E. Kalinina et al., "Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layers," Applied Surface Science, vol. 184, no. 04-jan, s. 323-329, 2001.
[177]
E. Kalinina et al., "Material quality improvements for high voltage 4H-SiC diodes," Materials Science & Engineering : B. Solid-state Materials for Advanced Technology, vol. 80, no. 03-jan, s. 337-341, 2001.
[178]
D. Aberg et al., "Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers," Applied Physics Letters, vol. 78, no. 19, s. 2908-2910, 2001.
[179]
D. Aberg et al., "Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers," Applied Surface Science, vol. 184, no. 04-jan, s. 263-267, 2001.
[180]
L. Storasta et al., "Pseudodonor nature of the D-I defect in 4H-SiC," Applied Physics Letters, vol. 78, no. 1, s. 46-48, 2001.
[181]
E. Kalinina et al., "Structural, electrical, and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers," Journal of Applied Physics, vol. 90, no. 10, s. 5402-5409, 2001.
[182]
T. V. Blank et al., "Temperature dependence of the quantum efficiency of 4H-SiC-Based Schottky photodiodes," Technical physics letters, vol. 27, no. 9, s. 776-778, 2001.
[183]
J. Slotte et al., "Vacancy type defects in Al implanted 4H-SiC studied by positron annihilation spectroscopy," Physica. B, Condensed matter, vol. 308, s. 664-667, 2001.
[184]
V. Y. Bratus et al., "Vacancy-related defects in ion-beam and electron irradiated 6H-SiC," Applied Surface Science, vol. 184, no. 04-jan, s. 229-236, 2001.
[185]
M. S. Janson et al., "Electric-field-assisted migration and accumulation of hydrogen in silicon carbide," Physical Review B. Condensed Matter and Materials Physics, vol. 61, no. 11, s. 7195-7198, 2000.
[186]
E. Kalinina et al., "High-dose Al-implanted 4H-SiC p(+)-n-n(+) junctions," Applied Physics Letters, vol. 77, no. 19, s. 3051-3053, 2000.
[187]
A. Y. Kuznetsov et al., "Self-interstitial migration during ion irradiation of boron delta-doped silicon," Materials Science in Semiconductor Processing, vol. 3, no. 4, s. 279-283, 2000.
[188]
M. S. Janson et al., "Transient enhanced diffusion of implanted boron in 4H-silicon carbide," Applied Physics Letters, vol. 76, no. 11, s. 1434-1436, 2000.
[189]
A. Hallén, "Lifetime in proton irradiated silicon," Journal of Applied Physics, vol. 79, s. 3906, 1996.
Konferensbidrag
[190]
Z. Yuan et al., "Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation," i Materials Science Forum, 2022, s. 442-446.
[191]
M. K. Linnarsson, A. Hallén och L. Vines, "Intentional and unintentional channeling during implantation of p-dopants in 4h-sic," i Materials Science Forum, 2020, s. 689-697.
[192]
D. Johannesson et al., "Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model," i Materials Science Forum, 2020, s. 911-916.
[193]
A. Hallén, M. Linnarsson och L. Vines, "Recent advances in the doping of 4H-SiC by channeling ion implantation," i Silicon Carbide and Related Materials 2018, 2019, s. 375-381.
[194]
H. M. Ayedh et al., "Controlling the carbon vacancy in 4H-SiC by thermal processing," i ECS Transactions, 2018, s. 91-97.
[195]
H. M. Ayedh et al., "Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC," i International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, 2018, s. 233-236.
[196]
A. Hallén och S. S. Suvanam, "Radiation hardness for silicon oxide and aluminum oxide on 4H-SiC," i International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, 2018, s. 229-232.
[197]
M. K. Linnarsson et al., "Surface erosion of ion-implanted 4H-SiC during annealing with carbon cap," i International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, 2018, s. 373-376.
[198]
H. M. Ayedh et al., "Formation of D-Center in p-type 4H-SiC epi-layers during high temperature treatments," i 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, 2017, s. 262-265.
[199]
S. S. Suvanam et al., "Total Dose Effects on 4H-SiC Bipolar Junction Transistors," i European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM-16), 2017.
[200]
M. K. Linnarsson et al., "Alkali metal re-distribution after oxidation of 4H-SiC," i 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 2016, s. 677-680.
[201]
H. M. Ayedh et al., "Controlling the carbon vacancy concentration in 4H-SiC subjected to high temperature treatment," i 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 2016, s. 414-417.
[202]
H. M. Ayedh et al., "Formation and annihilation of carbon vacancies in 4H-SiC," i 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 2016, s. 331-336.
[203]
F. Issa et al., "Improvements in Realizing 4H-SiC Thermal Neutron Detectors," i ISRD 15 - INTERNATIONAL SYMPOSIUM ON REACTOR DOSIMETRY, 2016.
[204]
S. S. Suvanam et al., "Interface analysis of p-type 4H-SiC/Al2O3 using synchrotron-based XPS," i 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 2016, s. 693-696.
[205]
F. Issa et al., "4H-SiC Neutron Sensors Based on Ion Implanted B-10 Neutron Converter Layer," i 2015 4TH INTERNATIONAL CONFERENCE ON ADVANCEMENTS IN NUCLEAR INSTRUMENTATION MEASUREMENT METHODS AND THEIR APPLICATIONS (ANIMMA), 2015.
[206]
F. Issa et al., "4H-SiC neutron sensors based on ion implanted 10B neutron converter layer," i 2015 4th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications, ANIMMA 2015, 2015.
[207]
A. Salemi et al., "Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes," i Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2015, s. 269-272.
[208]
H. M. Ayedh et al., "Isothermal treatment effects on the carbon vacancy in 4H silicon carbide," i Mater. Sci. Forum, 2015, s. 351-354.
[209]
F. Issa et al., "Study of the stability of 4H-SiC detectors by thermal neutron irradiation," i European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, 2015, s. 875-878.
[210]
M. Linnarsson och A. Hallén, "Diffusion of alkali metals in SiC," i Silicon Carbide and Related Materials 2013, PTS 1 and 2, 2014, s. 297-300.
[211]
F. Issa et al., "Nuclear radiation detectors based on 4H-SiC p+-n junction," i 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, 2014, s. 1046-1049.
[212]
V. Vervisch et al., "Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor," i Materials Research Society Symposium Proceedings, 2014.
[213]
S. S. Suvanam et al., "A comparison of free carrier absorption and capacitance voltage methods for interface trap measurements," i Silicon Carbide and Related Materials 2012, 2013, s. 465-468.
[214]
R. Nipoti et al., "Al+ implanted 4H-SiC : Improved electrical activation and ohmic contacts," i Silicon Carbide and Related Materials 2012, 2013, s. 767-772.
[215]
Y. Song et al., "Dilute bismides for near and mid-infrared applications," i 2013 15th International Conference on Transparent Optical Networks (ICTON), 2013, s. 6602735.
[216]
S. S. Suvanam et al., "Effects of 3 MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gates," i Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, 2013.
[217]
V. Vervisch et al., "Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC," i 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013, 2013, s. 6728002.
[218]
J. Ul Hassan et al., "On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications," i Silicon Carbide and Related Materials 2012, 2013, s. 173-176.
[219]
F. Issa et al., "Radiation silicon carbide detectors based on ion implantation of boron," i 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013, 2013, s. 6727997.
[220]
I. D. Booker et al., "Comparison of post-growth carrier lifetime improvement methods for 4H-SiC epilayers," i Silicon Carbide And Related Materials 2011, Pts 1 And 2, 2012, s. 285-288.
[221]
M. Usman et al., "Effect of nuclear scattering damage at the SiO2/SiC and Al2O3/SiC interface : A radiation hardness study of dielectrics," i Silicon Carbide And Related Materials 2011, Pts 1 And 2, 2012, s. 805-808.
[222]
R. Nipoti et al., "High dose Al + implanted and microwave annealed 4H-SiC," i Silicon Carbide and Related Materials 2011, 2012, s. 817-820.
[223]
M. K. Linnarsson et al., "Mn implantation for new applications of 4H-SiC," i Silicon Carbide and Related Materials 2011, 2012, s. 221-224.
[224]
G. Moschetti et al., "Source-drain scaling of ion-implanted InAs/AlSb HEMTs," i Indium Phosphide and Related Materials (IPRM), 2012 International Conference on, 2012, s. 57-60.
[225]
M. Usman et al., "Characterization of Al-based high-k stacked dielectric layers deposited on 4H-SiC by Atomic Layer Deposition," i SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, s. 441-444.
[226]
M.-S. Kang et al., "Effect of annealing temperature on the barrier height of nano-particle embedded Ni-contacts to 4H-SiC," i 2011 International Semiconductor Device Research Symposium (ISDRS), 2011, s. 1-2.
[227]
H. L. Liang et al., "High Zn content single-phase RS-MgZnO suitable for solar-blind frequency applications," i 2010 Wide Bandgap Cubic Semiconductors : From Growth To Devices, 2010, s. 185-190.
[228]
J. Jensen et al., "Localized 56Fe+ ion implantation of TiO2 using anodic porous alumina," i Ion beams and nano-engineering, 2010, s. 3-8.
[229]
J. Jensen et al., "Localized Fe-56(+) Ion Implantation of TiO2 Using Anodic Porous Alumina," i ION BEAMS AND NANO-ENGINEERING, 2010, s. 3-+.
[230]
M. Östling et al., "SiC bipolar power transistors : Design and technology issues for ultimate performance," i 2010 MRS Spring Meeting, 2010, s. 175-186.
[231]
P. T. Neuvonen et al., "Transportation of Na and Li in hydrothermally grown ZnO," i Zinc oxide and related materials 2009, 2010, s. 29-34.
[232]
M. K. Linnarsson et al., "A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond," i SILICON CARBIDE AND RELATED MATERIALS 2007, 2009, s. 453-456.
[233]
A. Azarov et al., "High dose Fe implantation of gan : Damage build-up and dopant redistribution," i PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008.
[234]
P. Petersson et al., "Measurement of hydrogen isotopes by a nuclear microprobe," i PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008.
[235]
A. Galeckas et al., "Investigation of structural stability in 4H-SiC structures with heavy ion implanted interface," i Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, s. 395-398.
[236]
B. Svensson et al., "Ion implantation processing and related effects in SiC," i Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, s. 781-786.
[237]
M. Wolborski et al., "Characterization of aluminum and titanium oxides deposited on 4H SiC by atomic later deposition technique," i Silicon Carbide and Related Materials 2004, 2005, s. 701-704.
[238]
E. Kalinina et al., "Comparative study of 4H-SiC irradiated with neutrons and heavy ions," i SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, s. 377-380.
[239]
A. Ivanov et al., "High energy resolution detectors based on 4H-SiC," i SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, s. 1029-1032.
[240]
A. Strel'chuk et al., "Influence of gamma-ray and neutron irradiation on injection characteristics of 4H-SiC pn structures," i SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, s. 993-996.
[241]
A. Galeckas et al., "Investigation of stacking fault formation in hydrogen bombarded 4H-SiC," i SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, s. 327-330.
[242]
S. Intarasiri et al., "Ion beam synthesis of silicon carbide," i PARTICLE BEAMS & PLASMA INTERACTION ON MATERIALS AND ION & PLASMA SURFACE FINISHING 2004, 2005, s. 51-54.
[243]
H. Kortegaard Nielsen et al., "M-center in low-dose proton implanted 4H-SiC; Bistability and change in emission rate," i SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, s. 497-500.
[244]
B. G. Svensson et al., "Defects and diffusion in high purity silicon for detector applications," i Conference on Photo-Responsive Materials, Proceedings, 2004, s. 2250-2257.
[245]
E. Kalinina et al., "Electrical study of fast neutron irradiated devices based on 4H-SiC CVD epitaxial layers," i SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, s. 705-708.
Icke refereegranskade
Artiklar
[246]
M. Hammar, A. Hallén och S. Lourdudoss, "Compound Semiconductors," Physica Status Solidi (a) applications and materials science, vol. 219, no. 4, 2022.
[247]
A. Audren et al., "Damage recovery in ZnO by post-implantation annealing," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 268, no. 11-12, s. 1842-1846, 2010.
Konferensbidrag
[248]
U. Zimmermann et al., "Comparison between implanted and epitaxial pin-diodes on 4H-silicon carbide," i SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, s. 1037-1040.
Kapitel i böcker
[249]
M. K. Linnarsson, L. Vines och A. Hallén, "Al Implantation in SiC; Where Will the Ions Come to Rest?," i Solid State Phenomena, : Trans Tech Publications, Ltd., 2023, s. 57-64.
[250]
Z. Yuan et al., "Tailoring the Charge Carrier Lifetime Distribution of 10 kV SiC PiN Diodes by Physical Simulations," i Key Engineering Materials, : Trans Tech Publications, Ltd., 2023, s. 119-124.
Övriga
[251]
H. Kortegaard Nielsen et al., "Defect evolution at room temperature and 100 degrees C in n-type 4H sislicon carbide.," (Manuskript).
[252]
S. S. Suvanam et al., "Improved Interface and Electrical Properties of Atomic Layer Deposited Al2O3/4H-SiC," (Manuskript).
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2024-04-26 00:02:37