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Publications by Carl-Mikael Zetterling

Peer reviewed

Articles

[1]
A. Metreveli et al., "In Situ Gamma Irradiation Effects on 4H-SiC Bipolar Junction Transistors," IEEE Transactions on Nuclear Science, vol. 70, no. 12, pp. 2597-2604, 2023.
[2]
M. Ekström and C.-M. Zetterling, "Self-aligned contacts to ion implanted S/D regions in 4H-SiC," Materials Science in Semiconductor Processing, vol. 168, 2023.
[3]
S. Hou et al., "A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 degrees C," IEEE Journal of the Electron Devices Society, vol. 8, no. 1, pp. 116-121, 2020.
[4]
D. Mukherjee et al., "Deposition of diamond films on single crystalline silicon carbide substrates," Diamond and related materials, vol. 101, 2020.
[5]
S. Kargarrazi et al., "500 degrees C SiC PWM Integrated Circuit," IEEE transactions on power electronics, vol. 34, no. 3, pp. 1997-2001, 2019.
[6]
M. Shakir et al., "555-Timer and Comparators Operational at 500 degrees C," IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3734-3739, 2019.
[7]
S. Hou et al., "A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode," IEEE Electron Device Letters, vol. 40, no. 1, pp. 51-54, 2019.
[8]
M. Ekström, B. G. Malm and C.-M. Zetterling, "High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators," IEEE Electron Device Letters, vol. 40, no. 5, pp. 670-673, 2019.
[9]
M. Ekström, A. Ferrario and C.-M. Zetterling, "Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide," Journal of Electronic Materials, vol. 48, no. 4, pp. 2509-2516, 2019.
[10]
S. Roy et al., "Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning," IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3764-3770, 2019.
[11]
[12]
A. Salemi et al., "15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain," IEEE Electron Device Letters, vol. 39, no. 1, pp. 63-66, 2018.
[13]
S. Kargarrazi et al., "500 °c, High Current Linear Voltage Regulator in 4H-SiC BJT Technology," IEEE Electron Device Letters, vol. 39, no. 4, pp. 548-551, 2018.
[14]
M. Shakir et al., "A 600 degrees C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology," IEEE Electron Device Letters, vol. 39, no. 10, pp. 1540-1543, 2018.
[15]
T. Kurose et al., "Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics," Materials Science Forum, vol. 924, pp. 971-974, 2018.
[16]
S. Hou et al., "Scaling and modeling of high temperature 4H-SiC p-i-n photodiodes," IEEE Journal of the Electron Devices Society, vol. 6, no. 1, pp. 139-145, 2018.
[17]
H. Elahipanah et al., "500 degrees C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits," IEEE Electron Device Letters, vol. 38, no. 10, pp. 1429-1432, 2017.
[18]
Y. Tian and C.-M. Zetterling, "A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C," IEEE Transactions on Electron Devices, vol. 64, no. 7, pp. 2782-2788, 2017.
[19]
H. Elahipanah et al., "A Wafer-Scale Self-Aligned Ni-Silicide (SALICIDE) Low-Ohmic Contact Technology on n-type 4H-SiC," ECS Journal of Solid State Science and Technology, vol. 6, no. 4, pp. 197-200, 2017.
[20]
H. Elahipanah et al., "A wafer-scale Ni-salicide contact technology on n-type 4H-SiC," ECS Journal of Solid State Science and Technology, vol. 6, no. 4, pp. P197-P200, 2017.
[21]
C.-M. Zetterling et al., "Bipolar integrated circuits in SiC for extreme environment operation," Semiconductor Science and Technology, vol. 32, no. 3, 2017.
[22]
A. Nathan, P. Pavan and C.-M. Zetterling, "Editorial EIC," IEEE Journal of the Electron Devices Society, vol. 5, no. 3, pp. 147-148, 2017.
[23]
R. Hedayati et al., "High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology," Materials Science Forum, vol. 897, pp. 681-684, 2017.
[24]
Y. Tian and C.-M. Zetterling, "High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology," Solid-State Electronics, vol. 135, pp. 65-70, 2017.
[25]
M. Ekström et al., "Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide," Journal of Electronic Materials, vol. 46, no. 7, pp. 4478-4484, 2017.
[26]
Y. Tian, R. Hedayati and C.-M. Zetterling, "SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K," IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3588-3594, 2017.
[27]
S. Hou et al., "550 degrees C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization," IEEE Electron Device Letters, vol. 37, no. 12, pp. 1594-1596, 2016.
[28]
R. Hedayati et al., "A 500 degrees C 8-b Digital-to-Analog Converter in Silicon Carbide Bipolar Technology," IEEE Transactions on Electron Devices, vol. 63, no. 9, pp. 3445-3450, 2016.
[29]
Y. Tian et al., "A 500 °C monolithic SiC BJT latched comparator," Materials Science Forum, vol. 858, pp. 921-924, 2016.
[30]
A. Salemi et al., "A Comprehensive Study on the Geometrical Effects in High Power 4H-SiC BJTs," IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 882-887, 2016.
[31]
S. Kargarrazi, L. Lanni and C.-M. Zetterling, "A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier," Solid-State Electronics, vol. 116, pp. 33-37, 2016.
[32]
S. S. Suvanam et al., "High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits," IEEE Transactions on Nuclear Science, 2016.
[33]
H. Elahipanah et al., "Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High Voltage SiC BJTs and Darlington Transistors," IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4366-4372, 2016.
[34]
R. Hedayati and C.-M. Zetterling, "Material aspects of wide temperature range amplifier design in SiC bipolar technologies," Journal of Materials Research, vol. 31, no. 19, pp. 2928-2935, 2016.
[35]
Y. Tian et al., "Silicon Carbide fully differential amplifier characterized up to 500 °C," IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2242-2247, 2016.
[36]
R. Hedayati et al., "Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC," IEEE Electron Device Letters, vol. 37, no. 2, pp. 146-149, 2016.
[37]
H. Elahipanah et al., "4.5-kV 20-mΩ. cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension," Materials Science Forum, vol. 821, pp. 838-841, 2015.
[38]
H. Elahipanah et al., "5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension," IEEE Electron Device Letters, vol. 36, no. 2, pp. 168-170, 2015.
[39]
S. Kargarrazi et al., "500 degrees C Bipolar SiC Linear Voltage Regulator," IEEE Transactions on Electron Devices, vol. 62, no. 6, pp. 1953-1957, 2015.
[40]
S. Kargarrazi, L. Lanni and C.-M. Zetterling, "Design and characterization of 500°c schmitt trigger in 4H-SiC," Materials Science Forum, vol. 821-823, pp. 897-901, 2015.
[41]
L. Lanni et al., "ECL-based SiC logic circuits for extreme temperatures," Materials Science Forum, vol. 821-823, pp. 910-913, 2015.
[42]
L. Lanni et al., "Influence of Passivation Oxide Thickness and Device Layout on the Current Gain of SiC BJTs," IEEE Electron Device Letters, vol. 36, no. 1, pp. 11-13, 2015.
[43]
C.-M. Zetterling, "Integrated circuits in silicon carbide for high-temperature applications," MRS bulletin, vol. 40, no. 5, pp. 431-438, 2015.
[44]
[45]
A. Salemi et al., "Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs," IEEE Electron Device Letters, vol. 36, no. 10, pp. 1069-1072, 2015.
[46]
H. Fashandi et al., "Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti," Scripta Materialia, vol. 99, pp. 53-56, 2015.
[47]
K. Smedfors, C.-M. Zetterling and M. Östling, "Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC," Materials Science Forum, vol. 821-823, pp. 440-443, 2015.
[48]
S. S. Suvanam et al., "Tailoring the interface between dielectric and 4H-SiC by ion implantation," Materials Science Forum, vol. 821-823, pp. 488-491, 2015.
[49]
R. Hedayati et al., "A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology," IEEE Electron Device Letters, vol. 35, no. 7, pp. 693-695, 2014.
[50]
J. Xia et al., "Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor," Materials Science Forum, vol. 778-780, pp. 549-552, 2014.
[51]
K. Smedfors et al., "Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from-40 degrees C to 500 degrees C," Materials Science Forum, vol. 778-780, pp. 681-684, 2014.
[52]
S. S. Suvanam et al., "Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates," IEEE Transactions on Nuclear Science, vol. 61, no. 4, pp. 1772-1776, 2014.
[53]
A. Salemi et al., "Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC," Materials Science Forum, vol. 778-780, pp. 836-840, 2014.
[54]
L. Lanni et al., "Lateral p-n-p Transistors and Complementary SiC Bipolar Technology," IEEE Electron Device Letters, vol. 35, no. 4, pp. 428-430, 2014.
[55]
L. Lanni et al., "SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs," Materials Science Forum, vol. 778-780, pp. 1005-1008, 2014.
[56]
L. Lanni et al., "500 degrees C Bipolar Integrated OR/NOR Gate in 4H-SiC," IEEE Electron Device Letters, vol. 34, no. 9, pp. 1091-1093, 2013.
[57]
L. Lanni et al., "A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits," Journal of Microelectronics and Electronic Packaging, vol. 10, no. 4, pp. 155-162, 2013.
[58]
A. Salemi et al., "Area-optimized JTE simulations for 4.5 kV non ion-implanted sic BJT," Materials Science Forum, vol. 740-742, pp. 974-977, 2013.
[59]
L. Lanni et al., "High-temperature characterization of 4H-SiC darlington transistors for low voltage applications," Materials Science Forum, vol. 740-742, pp. 966-969, 2013.
[60]
H. Elahipanah et al., "Process variation tolerant 4H-SiC power devices utilizing trench structures," Materials Science Forum, vol. 740-742, pp. 809-812, 2013.
[61]
L. Lanni et al., "Bipolar integrated OR-NOR gate in 4H-SiC," Materials Science Forum, vol. 717-720, pp. 1257-1260, 2012.
[62]
L. Lanni et al., "Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC," IEEE Transactions on Electron Devices, vol. 59, no. 4, pp. 1076-1083, 2012.
[63]
C.-M. Zetterling et al., "Future high temperature applications for SiC integrated circuits," Physica Status Solidi. C, Current topics in solid state physics, vol. 9, no. 7, pp. 1647-1650, 2012.
[64]
K. Buchholt et al., "Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)," Journal of Crystal Growth, vol. 343, no. 1, pp. 133-137, 2012.
[65]
B. Buono et al., "Investigation of Current Gain Degradation in 4H-SiC Power BJTs," Materials Science Forum, vol. 717-720, pp. 1131-1134, 2012.
[66]
J. -. Lee et al., "Local anodic oxidation of phosphorus-implanted 4H-SiC by atomic force microscopy," Materials Science Forum, vol. 717-720, pp. 905-908, 2012.
[68]
B. Buono et al., "Current Gain Degradation in 4H-SiC Power BJTs," Materials Science Forum, vol. 679-680, pp. 702-705, 2011.
[69]
R. Ghandi et al., "High Voltage (2.8 kV) Implantation-free 4H-SiC BJTs with Long-TermStability of the Current Gain," IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2665-2669, 2011.
[70]
R. Ghandi et al., "High Voltage, Low On-resistance 4H-SiC BJTs with Improved Junction Termination Extension," Materials Science Forum, vol. 679-680, pp. 706-709, 2011.
[72]
B. Buono et al., "Modeling and Characterization of the ON-Resistance in 4H-SiC Power BJTs," IEEE Transactions on Electron Devices, vol. 58, no. 7, pp. 2081-2087, 2011.
[73]
K. Buchholt et al., "Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide," Applied Physics Letters, vol. 98, no. 4, pp. 042108, 2011.
[74]
R. Ghandi et al., "Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation," IEEE Electron Device Letters, vol. 32, no. 5, pp. 596-598, 2011.
[75]
R. Ghandi et al., "Surface-passivation effects on the performance of 4H-SiC BJTs," IEEE Transactions on Electron Devices, vol. 58, pp. 259-265, 2011.
[76]
R. Esteve et al., "Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures," Journal of the Electrochemical Society, vol. 5, no. 158, pp. 496-501, 2011.
[77]
R. Esteve et al., "Comparative study of thermal oxides and post-oxidized depositedoxides on n-type free standing 3C-SiC," Materials Science Forum, vol. 645-648, pp. 829-832, 2010.
[78]
R. Ghandi et al., "Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs," Materials Science Forum, vol. 645-648, no. Part 1-2, pp. 661-664, 2010.
[79]
B. Buono et al., "Influence of Emitter Width and Emitter-Base Distance on the Current Gain in 4H-SiC Power BJTs," IEEE Transactions on Electron Devices, vol. 57, no. 10, pp. 2664-2670, 2010.
[80]
B. Buono et al., "Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs," IEEE Transactions on Electron Devices, vol. 57, no. 3, pp. 704-711, 2010.
[81]
B. Buono et al., "Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs," Materials Science Forum, vol. 645-648, pp. 1061-1064, 2010.
[82]
H.-S. Lee et al., "1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance," Materials Science Forum, vol. 600-603, pp. 1151-1154, 2009.
[85]
R. Ghandi et al., "Backside Nickel Based Ohmic Contacts to n-type Silicon Carbide," Materials Science Forum, vol. 600-603, pp. 635-638, 2009.
[86]
R. Esteve et al., "Comparative study of thermally grown oxides on n-type free standing 3C-SiC (001)," Journal of Applied Physics, vol. 106, no. 4, 2009.
[87]
R. Ghandi et al., "High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension," IEEE Electron Device Letters, vol. 30, no. 11, pp. 1170-1172, 2009.
[89]
B. Buono et al., "Simulations of Open Emitter Breakdown Voltage in SiC BJTs with non Implanted JTE," Materials Science Forum, vol. 615-617, pp. 841-844, 2009.
[90]
R. Ghandi et al., "Fabrication of 2700-v 12-m Omega center dot cm(2) non ion-implanted 4H-SiC BJTs with common-emitter current gain of 50," IEEE Electron Device Letters, vol. 29, no. 10, pp. 1135-1137, 2008.
[91]
H.-S. Lee et al., "High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE," IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1894-1898, 2008.
[92]
H.-S. Lee et al., "Low-forward-voltage-drop 4H-SiC BJTs without base contact implantation," IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1907-1911, 2008.
[93]
H.-S. Lee et al., "Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors," Applied Physics Letters, vol. 92, no. 8, pp. 082113-1-082113-3, 2008.
[94]
H.-S. Lee et al., "1200-V 5.2-m Omega center dot cm(2) 4H-SiC BJTs with a high common-emitter current gain," IEEE Electron Device Letters, vol. 28, no. 11, pp. 1007-1009, 2007.
[95]
H.-S. Lee et al., "4H-SiC power BJTs with high current gain and low on-resistance," Materials Science Forum, vol. 556-557, pp. 767-770, 2007.
[96]
H.-S. Lee et al., "A comparative study of surface passivation on SiC BJTs with high current gain," Materials Science Forum, vol. 556-557, pp. 631-634, 2007.
[97]
M. Domeij et al., "Current gain dependence on emitter width in 4H-SiC BJTs," Materials Science Forum, vol. 527-529, pp. 1425-1428, 2006.
[98]
H.-S. Lee et al., "Investigation of TiW contacts to 4H-SiC bipolar junction devices," Materials Science Forum, vol. 527-529, pp. 887-890, 2006.
[99]
E. Danielsson et al., "A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer," Materials Science Forum, vol. 483-485, pp. 905-908, 2005.
[100]
M. Domeij et al., "Current gain of 4H-SiC bipolar transistors including the effect of interface states," Materials Science Forum, vol. 483, pp. 889-892, 2005.
[101]
H.-S. Lee et al., "Electrical characteristics of 4H-SiC BJTs at elevated temperatures," Materials Science Forum, vol. 483-485, pp. 897-900, 2005.
[102]
M. Domeij et al., "Geometrical effects in high current gain 1100-V 4H-SiC BJTs," IEEE Electron Device Letters, vol. 26, no. 10, pp. 743-745, 2005.
[103]
E. Danielsson et al., "Extrinsic base design of SiC bipolar transistors," Materials Science Forum, vol. 457-460, no. II, pp. 1117-1120, 2004.
[104]
[105]
W. Liu et al., "High frequency measurements and simulations of SiC MESFETs up to 250 degrees C," Materials Science Forum, vol. 457-460, pp. 1209-1212, 2004.
[106]
S.-M. Koo et al., "SiC JMOSFETs for high-temperature stable circuit operation," Materials Science Forum, vol. 457-460, pp. 1445-1448, 2004.
[107]
H.-S. Lee et al., "Simulation study of 4H-SiC junction-gated MOSFETs from 300 K to 773 K," Materials Science Forum, vol. 457-460, pp. 1437-1440, 2004.
[108]
M. Östling et al., "Thin films in silicon carbide semiconductor devices," Proceedings of SPIE, the International Society for Optical Engineering, vol. 5774, pp. 5-10, 2004.
[109]
S. M. Koo et al., "Combination of JFET and MOSFET devices in 4H-SiC for high-temperature stable circuit operation," Electronics Letters, vol. 39, no. 12, pp. 933-935, 2003.
[110]
W. Liu et al., "Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors," Materials Science Forum, vol. 433-436, pp. 781-784, 2003.
[111]
S. M. Koo et al., "Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor," Applied Physics Letters, vol. 83, no. 19, pp. 3975-3977, 2003.
[112]
E. Danielson et al., "Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors," Solid-State Electronics, vol. 47, no. 4, pp. 639-644, 2003.
[113]
S. M. Koo et al., "Processing and properties of ferroelectric Pb(Zr,Ti)O-3/silicon carbide field-effect transistor," Integrated Ferroelectrics, vol. 57, pp. 1221-1231, 2003.
[114]
S. -. Koo et al., "Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs," Materials Science Forum, vol. 433-436, pp. 773-776, 2003.
[115]
E. Danielsson et al., "Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H-SiC," Journal of Applied Physics, vol. 91, no. 4, pp. 2372-2379, 2002.
[116]
S. M. Koo et al., "Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide," Solid-State Electronics, vol. 46, no. 9, pp. 1375-1380, 2002.
[117]
S. K. Lee et al., "Electrical characterization of titanium-based ohmic contacts to 4H-Silicon carbide for high-power and high-temperature operation," Journal of the Korean Physical Society, vol. 40, no. 4, pp. 572-576, 2002.
[118]
S. M. Koo et al., "Ferroelectric Pb(Zr,Ti)O-3/Al2O3/4H-SiC diode structures," Applied Physics Letters, vol. 81, no. 5, pp. 895-897, 2002.
[119]
S. -. Koo et al., "Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors," Materials Science Forum, vol. 389-393, no. 2, pp. 1235-1238, 2002.
[120]
E. Danielsson et al., "Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors," Materials Science Forum, vol. 389-393, no. 2, pp. 1337-1340, 2002.
[121]
S. K. Lee et al., "Low resistivity ohmic contacts on 4H-silicon carbide for high power and high temperature device applications," Microelectronic Engineering, vol. 60, no. 02-jan, pp. 261-268, 2002.
[123]
S. K. Lee et al., "Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide," Journal of Electronic Materials, vol. 31, no. 5, pp. 340-345, 2002.
[124]
S. K. Lee et al., "Reduction of the Schottky barrier height on silicon carbide using Au nano-particles," Solid-State Electronics, vol. 46, no. 9, pp. 1433-1440, 2002.
[126]
E. Danielsson et al., "The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions," Solid-State Electronics, vol. 46, no. 6, pp. 827-835, 2002.
[127]
E. Danielsson et al., "Fabrication and characterization of heterojunction diodes with HVPE-Grown GaN on 4H-SiC," IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 444-449, 2001.
[128]
H. Cho et al., "High density plasma via hole etching in SiC," Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, vol. 19, no. 4, pp. 1878-1881, 2001.
[129]
E. Danielsson et al., "Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization," Journal of Electronic Materials, vol. 30, no. 3, pp. 247-252, 2001.
[130]
S. K. Lee, C.-M. Zetterling and M. Östling, "Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide," Journal of Electronic Materials, vol. 30, no. 3, pp. 242-246, 2001.
[131]
F. Dahlquist et al., "2.8 kV, forward drop JBS diode with low leakage," Materials Science Forum, vol. 338-342, pp. 1179-1182, 2000.
[132]
N. Lundberg et al., "CVD-based tungsten carbide Schottky contacts to 6H-SiC for very high-temperature operation," Journal of Electronic Materials, vol. 29, no. 3, pp. 372-375, 2000.
[133]
E. Danielsson et al., "Dry etching and metallization schemes in a GaN/SiC heterojunction device process," Materials Science Forum, vol. 338-342, pp. 1049-1052, 2000.
[134]
P. Leerungnawarat et al., "Effect of UV light irradiation on SiC dry etch rates," Journal of Electronic Materials, vol. 29, no. 3, pp. 342-346, 2000.
[135]
S. K. Lee et al., "Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H-silicon carbide," Applied Physics Letters, vol. 77, no. 10, pp. 1478-1480, 2000.
[136]
L. W. Wang et al., "Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen," Journal of Physics D : Applied Physics, vol. 33, no. 12, pp. 1551-1555, 2000.
[137]
S. K. Lee et al., "Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide," Solid-State Electronics, vol. 44, no. 7, pp. 1179-1186, 2000.
[138]
S. K. Lee, C.-M. Zetterling and M. Östling, "Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide," Journal of Applied Physics, vol. 87, no. 11, pp. 8039-8044, 2000.
[139]
C.-M. Zetterling et al., "SiC MISFETs with MBE-grown AlN gate dielectric," Materials Science Forum, vol. 338-342, pp. 1315-1318, 2000.
[140]
L. W. Wang et al., "Structural and electrical characteristics of oxygen-implanted 6H-SiC," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 169, pp. 1-5, 2000.
[141]
H. Cho et al., "Ultradeep, low-damage dry etching of SiC," Applied Physics Letters, vol. 76, no. 6, pp. 739-741, 2000.
[142]
J. Hong et al., "Plasma chemistries for high density plasma etching of SiC," Journal of Electronic Materials, vol. 28, no. 3, pp. 196-201, 1999.
[143]
[144]
E. Danielsson et al., "Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes," Materials Science & Engineering : B. Solid-state Materials for Advanced Technology, vol. 61-62, pp. 320-324, 1999.
[145]
L. Wang et al., "Study of optical characteristics of damage in oxygen-implanted 6H-SiC," Journal of materials science letters, vol. 18, no. 12, pp. 979-982, 1999.
[146]
C.-M. Zetterling et al., "UV-ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide," Materials Science in Semiconductor Processing, vol. 2, no. 1, pp. 23-27, 1999.
[147]
P. Leerungnawarat et al., "Via-hole etching for SiC," Journal of Vacuum Science & Technology B, vol. 17, pp. 2050-2054, 1999.
[148]
C.-M. Zetterling et al., "Comparison of SiO2 and AlN as gate dielectric for SiC MOS structures," Materials Science Forum, vol. 264-268, pp. 877-880, 1998.
[149]
J. J. Wang et al., "High rate etching of SiC and SiCN in NF3 inductively coupled plasmas," Solid-State Electronics, vol. 42, no. 5, pp. 743-747, 1998.
[150]
J. J. Wang et al., "ICP etching of SiC," Solid-State Electronics, vol. 42, no. 12, pp. 2283-2288, 1998.
[151]
J. J. Wang et al., "Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries," Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, vol. 16, no. 4, pp. 2204-2209, 1998.
[152]
F. Dahlquist et al., "Junction barrier Schottky diodes in 4H-SiC and 6H-SiC," Materials Science Forum, vol. 264-268, no. PART 2, pp. 1061-1064, 1998.
[153]
C.-M. Zetterling et al., "Junction barrier Schottky diodes in 6H SiC," Solid-State Electronics, vol. 42, no. 9, pp. 1757-1759, 1998.
[154]
E. Danielsson et al., "Thermal stability of sputtered TiN as metal gate on 4H-SiC," Materials Science Forum, vol. 264-268, no. PART 2, pp. 805-808, 1998.
[155]
C.-M. Zetterling et al., "Influence of growth conditions on electrical characteristics of AlN on SiC," Applied Physics Letters, vol. 70, no. 26, pp. 3549-3551, 1997.
[156]
C.-M. Zetterling et al., "Investigation of aluminum nitride grown by metal-organic chemical-vapor deposition on silicon carbide," Journal of Applied Physics, vol. 82, no. 6, pp. 2990-2995, 1997.
[157]
C.-M. Zetterling and M. Östling, "A novel UMOS capacitor test structure for SiC devices," Solid-State Electronics, vol. 39, no. 9, pp. 1396-1397, 1996.
[158]
C.-M. Zetterling and M. Östling, "Thermal oxidation of n- and p-type 6H-silicon carbide," Physica scripta. T, vol. T54, pp. 291-294, 1994.
[159]
N. Lundberg, C.-M. Zetterling and M. Östling, "Temperature stability of cobalt Schottky contacts on n- and p-type 6H silicon carbide," Applied Surface Science, vol. 73, no. C, pp. 316-321, 1993.

Conference papers

[160]
M. Ekström, B. G. Malm and C.-M. Zetterling, "Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low Voltage n-Channel SiC MOSFETs," in Silicon Carbide and Related Materials 2019, 2020, pp. 642-651.
[161]
J. Inoue et al., "4H-SIC trench pMOSFETs for high-frequency CMOS inverters," in Silicon Carbide and Related Materials 2018, 2019, pp. 837-840.
[162]
S. Hou et al., "High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor," in European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), Birmingham, United Kingdom, 2-6 September 2018, 2019.
[163]
A. U. Rashid et al., "Numerical simulation model development and comparative analysis of low-voltage SiC BJT for compact modeling," in 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019, 2019, pp. 137-142.
[164]
S. Hou et al., "Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits," in Proceedings of the 3rd Electron Devices Technology and Manufacturing, (EDTM) Conference 2019, 2019.
[165]
T. Ishii et al., "Suppression of short-channel effects in 4H-SIC trench MOSFETS," in Silicon Carbide and Related Materials 2018, 2019, pp. 613-616.
[166]
J. Kajihara et al., "4H-SiC pMOSFETs with al-doped S/D and NbNi silicide ohmic contacts," in International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, 2018, pp. 423-427.
[167]
A. Salemi et al., "Conductivity modulated and implantation-free 4H-SiC ultra-high-voltage PiN Diodes," in International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, 2018, pp. 568-572.
[168]
M. Shakir et al., "Electrical characterization of integrated 2-input TTL NAND Gate at elevated temperature, fabricated in bipolar SiC-technology," in International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, 2018, pp. 958-961.
[169]
M. Ekström et al., "Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing," in International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, 2018, pp. 389-392.
[170]
A. Salemi et al., "10+ kV implantation-free 4H-SiC PiN diodes," in 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, 2017, pp. 423-426.
[171]
S. Hou et al., "4H-SiC PIN diode as high temperature multifunction sensor," in 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, 2017, pp. 630-633.
[172]
S. -. Kuroki et al., "4H-SiC pseudo-CMOS logic inverters for harsh environment electronics," in 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, 2017, pp. 669-672.
[173]
S. Hou et al., "Scaling of 4H-SiC p-i-n photodiodes for high temperature applications," in 2017 75th Annual Device Research Conference (DRC), 2017.
[174]
S. S. Suvanam et al., "Total Dose Effects on 4H-SiC Bipolar Junction Transistors," in European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM-16), 2017.
[175]
C. Fuglesang, C.-M. Zetterling and C. F. Wilson, "Venus long-life surface package (VL2SP)," in Proceedings of the International Astronautical Congress, IAC, 2017, pp. 3035-3043.
[176]
C. Fuglesang, C.-M. Zetterling and M. Östling, "Working on venus and beyond - SiC electronics for extreme environments," in Proceedings of the International Astronautical Congress, IAC, 2017, pp. 10393-10398.
[177]
H. Nagatsuma et al., "4H-SiC nMOSFETs with As-Doped S/D and NbNi silicide ohmic contacts," in 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 2016, pp. 573-576.
[178]
S. I. Kuroki et al., "Characterization of 4H-SiC nMOSFETs in harsh environments, high-temperature and high gamma-ray radiation," in 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 2016, pp. 864-867.
[179]
A. Salemi et al., "Geometrical effect dependency on the on-state characteristics in 5.6 kV 4H-SiC BJTs," in 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 2016, pp. 958-961.
[180]
J. Colmenares et al., "High-Temperature Passive Components for Extreme Environments," in 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2016, pp. 271-274.
[181]
H. Elahipanah et al., "Modification of etched junction termination extension for the high voltage 4H-SiC power devices," in Silicon Carbide and Related Materials, 2016, pp. 978-981.
[182]
M. Östling et al., "State of the art Power Switching Devices in SiC and their Applications," in 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2016, pp. 122-123.
[183]
R. Hedayati et al., "Wide Temperature Range Integrated Amplifier in Bipolar 4H-SiC Technology," in 2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2016, pp. 198-201.
[184]
S. Kargarrazi et al., "A monolithic SiC drive circuit for SiC Power BJTs," in 2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, pp. 285-288.
[185]
A. Salemi et al., "Area- and Efficiency-Optimized Junction Termination for a 5.6 kV SiC BJT Process with Low ON-Resistance," in 2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, pp. 249-252.
[186]
A. Salemi et al., "Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes," in Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2015, pp. 269-272.
[187]
S. S. Suvanam et al., "Effects of 3 MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gates," in Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, 2013.
[188]
C.-M. Zetterling, "Present and Future Applications of Silicon Carbide Devices and Circuits," in Proceedings of the Custom Integrated Circuits Conference 2012, 2012, p. 6330619.
[189]
L. Lanni et al., "Bipolar Integrated OR-NOR Gate in 4H-SiC," in Proceedings of International Conference on Silicon Carbibe and Related Materials 2011, 2011.
[190]
M.-S. Kang et al., "Effect of annealing temperature on the barrier height of nano-particle embedded Ni-contacts to 4H-SiC," in 2011 International Semiconductor Device Research Symposium (ISDRS), 2011, pp. 1-2.
[191]
C.-M. Zetterling et al., "Future high temperature applications for SiC integrated circuits," in 16th Semiconducting and Insulating Materials Conference (SIMC-XVI), Stockholm, Sweden, June 19-23, 2011, 2011.
[192]
M. Östling et al., "SiC Bipolar Devices for High Power and Integrated Drivers," in Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE, 2011, pp. 227-234.
[193]
M. Östling, R. Ghandi and C.-M. Zetterling, "SiC power devices - present status, applications and future perspective," in 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2011, pp. 10-15.
[194]
M. Östling et al., "Silicon carbide bipolar power devices," in ECS Transactions, 2011, pp. 189-200.
[196]
R. Ghandi et al., "Influence of crystal orientation on the current gain in 4H-SiC BJTs," in Device Research Conference - Conference Digest, DRC, 2010, pp. 131-132.
[197]
R. Esteve et al., "Optimization of Poly-Silicon Process for 3C-SiC Based MOS Devices," in Material Research Society Symposium Proceedings, 2010, p. 115.
[198]
M. Östling et al., "SiC bipolar power transistors : Design and technology issues for ultimate performance," in 2010 MRS Spring Meeting, 2010, pp. 175-186.
[199]
M. Domeij et al., "Analysis of the base current and saturation voltage in 4H-SiC power BJTs," in 2007 European Conference On Power Electronics And Applications : Vols 1-10, 2007, pp. 2744-2750.
[200]
H.-S. Lee et al., "Influence of the base contact on the electrical characteristics of SiC BJTs," in 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 : Jeju Island; 27 May 2007 through 31 May 2007, 2007, pp. 153-156.
[201]
R. Ghandi et al., "Simultaneous study of nickel based ohmic contacts to Si-face and C-face of n-type silicon carbide," in 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, pp. 311-311.
[202]
M. Domeij et al., "High current gain silicon carbide bipolar power transistors," in Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, 2006, pp. 141-144.
[203]
C.-M. Zetterling et al., "Silicon Carbide Power Device Technology," in COMMAD '06, Conference on Optoelectronic and Microelectronic Materials and Devices 2006. UWA, Perth, Australia. 6-8 December 2006, 2006.
[204]
M. Östling et al., "Silicon carbide devices and processes - Present status and future perspective," in Proceedings of the International Conference Mixed Design of Integrated Circuits and Systems, 2006, pp. 34-42.
[205]
M. Domeij et al., "SiC power bipolar junction transistors : Modeling and improvement of the current gain," in 2005 European Conference on Power Electronics and Applications, 2005, p. 1665888.
[206]
C.-M. Zetterling, W. Liu and M. Östling, "Thermal modeling of multi-finger SiC power MESFETs," in 2005 International Semiconductor Device Research Symposium, 2005, pp. 290-291.
[207]
W. Liu, C.-M. Zetterling and M. Östling, "Thermal-issues for design of high power SiC MESFETs," in PROCEEDINGS OF THE SIXTH IEEE CPMT CONFERENCE ON HIGH DENSITY MICROSYSTEM DESIGN AND PACKAGING AND COMPONENT FAILURE ANALYSIS (HDP'04), 2004, pp. 331-335.
[208]
C.-M. Zetterling et al., "Challenges for High Temperature Silicon Carbide Electronics," in Materials Research Society Symposium - Proceedings, 2003, pp. 15-25.
[209]
S.-M. Koo et al., "Characteristics of PZT/Al2O3 stack on SiC demonstrated in a NVFET," in 34th IEEE Semicondctor Interface Specialists Conference, 2003, 2003.
[210]
M. Domeij et al., "Measurements and simulations of self-heating and switching with 4H-SIC power BJTs," in IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2003, pp. 375-378.
[211]
S.-M. Koo et al., "Multifunction Integration of Junction-MOSFETs and Nonvolatile FETs on a Single 4H-SiC Substrate for 300°C Operation," in Proc. IEEE International Electron Devices Meeting (IEDM) 2003, 2003, pp. 575-578.
[212]
S. -. Koo et al., "Towards ferroelectric field effect transistors in 4H-silicon carbide," in Materials Research Society Symposium - Proceedings, 2002, pp. 371-379.
[213]
K. P. Lee et al., "Comparison of F2 plasma chemistries for deep etching of SiC," in Materials Research Society Symposium - Proceedings, 2001, pp. H7.7.1-H7.7.6.
[214]
S.-M. Koo et al., "Metal-oxide-semiconductor structures in inductively coupled plasma etch damaged 6H- and 4H-SiC," in 32nd IEEE Semiconductor Interface Specialists Conference, 2001, 2001.
[215]
S. -. Lee, C.-M. Zetterling and M. Östling, "Titanium tungsten (TiW) for Ohmic contacts to n-and p-type 4H-SiC," in Materials Research Society Symposium - Proceedings, 2001, pp. H7.2.1-H7.2.6.
[216]
S. -. Lee et al., "The formation and characterization of epitaxial titanium carbide contacts to 4H-SiC," in Materials Research Society Symposium - Proceedings, 2000, pp. T691-T696.
[217]
J. Huang et al., "Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process," in Materials Research Society Symposium - Proceedings, 1999, pp. 207-212.
[218]
C.-M. Zetterling, "Dielectric issues for silicon carbide MOS devices," in 29th IEEE Semiconductor Interface Specialists Conference, 1998.
[219]
J. J. Wang et al., "Low damage, highly anisotropic dry etching of SiC," in High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International, 1998, pp. 10-14.
[220]
C.-M. Zetterling et al., "High voltage silicon carbide Junction Barrier Schottky rectifiers," in Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1997, pp. 256-263.
[221]
J. J. Wang et al., "ICP etching of SiC," in Materials Research Society Symposium - Proceedings, 1997, pp. 177-183.
[222]
C.-M. Zetterling et al., "Formation and high frequency CV-measurements of aluminum/aluminum nitride/6H silicon carbide structures," in Materials Research Society Symposium - Proceedings, 1996, pp. 667-672.
[223]
C.-M. Zetterling and M. Östling, "Comparison of thermal gate oxides on silicon and carbon face p-type 6H silicon carbide," in Materials Research Society Symposium - Proceedings, 1994, pp. 209-214.
[224]
C.-M. Zetterling and M. Östling, "Electrical Properties of Thin Oxides for MOSFETs in the Poly-Si / SiO2 / 6H Silicon Carbide System," in Solid State Device Research Conference, 1993. ESSDERC ’93. 23rd European, 1993, pp. 497-500.

Chapters in books

[225]
M. Östling et al., "SiC Device Technologies," in Encyclopedia of RF and Microwave Engineering : vol 5, Kai Cang Ed., 1st ed. : Wiley-Blackwell, 2005, p. 4613.
[226]
C.-M. Zetterling, "Electrical and transport properties of AlN," in Properties, processing and applications of gallium nitride and related semiconductors, 1st ed. : Institution of Engineering and Technology, 1999, p. 40.

Non-peer reviewed

Articles

[227]
H. Elahipanah et al., "Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices," Materials Science Forum, vol. 858, pp. 978-981, 2016.

Conference papers

[228]
M. Shakir, S. Hou and C.-M. Zetterling, "A Monolithic 500 °C D-flip flop Realized in Bipolar 4H-SiC TTL technology," in Materials Science Forum, Proceedings of European Conference on Silicon Carbide and Related Materials 2018, Birmingham, United Kingdom, 2-6 September 2018, 2019.

Books

[229]
J. Carroll and C.-M. Zetterling, Hjälp studenterna att undvika plagiering. 1st ed. Stockholm : KTH Royal Institute of Technology, 2009.
[230]
C.-M. Zetterling, Process technology for silicon carbide devices. 1st ed. London : Institution of Electrical Engineers (IEE), 2002.

Chapters in books

[231]
C.-M. Zetterling, "Silicon carbide high temperature electronics - is this rocket science?," in Future Trends in Microelectronics : Frontiers and Innovations, : Wiley, 2013, pp. 102-109.

Other

[232]
M. Shakir et al., "555-Timer IC Operational at 500 °C," (Manuscript).
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