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Publications by Saulius Marcinkevicius

Peer reviewed

Articles

[1]
S. Marcinkevičius et al., "Dynamics of carrier injection through V-defects in long wavelength GaN LEDs," Applied Physics Letters, vol. 124, no. 18, 2024.
[2]
S. Marcinkevičius et al., "Effect of Mg doping on carrier recombination in GaN," Journal of Applied Physics, vol. 134, no. 8, 2023.
[3]
S. Marcinkevičius et al., "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs," Applied Physics Letters, vol. 123, no. 20, 2023.
[5]
S. Marcinkevicius and J. S. Speck, "Electron-phonon scattering in beta-Ga2O3 studied by ultrafast transmission spectroscopy," Applied Physics Letters, vol. 118, no. 24, 2021.
[6]
S. Marcinkevičius et al., "High internal quantum efficiency of long wavelength InGaN quantum wells," Applied Physics Letters, vol. 119, no. 7, 2021.
[9]
S. Marcinkevičius and J. S. Speck, "Ultrafast dynamics of hole self-localization in beta-Ga2O3," Applied Physics Letters, vol. 116, no. 13, 2020.
[10]
R. Yapparov et al., "Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells," Journal of Applied Physics, vol. 128, no. 22, 2020.
[11]
M. A. Bergmann et al., "Electrochemical etching of AlGaN for the realization of thin-film devices," Applied Physics Letters, vol. 115, no. 18, 2019.
[12]
A. C. Espenlaub et al., "Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs," Journal of Applied Physics, vol. 126, no. 18, 2019.
[13]
S. Marcinkevicius et al., "Interwell carrier transport in InGaN/(In)GaN multiple quantum wells," Applied Physics Letters, vol. 114, no. 15, 2019.
[14]
G. Omanakuttan et al., "Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth," Optical Materials Express, vol. 9, no. 3, pp. 1488-1500, 2019.
[15]
T. K. UŽdavinys et al., "Impact of surface morphology on the properties of light emission in InGaN epilayers," Applied Physics Express, vol. 11, no. 5, 2018.
[16]
[20]
R. Ivanov et al., "Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells," Applied Physics Letters, vol. 110, no. 3, 2017.
[21]
M. Noroozi et al., "Unprecedented thermoelectric power factor in SiGe nanowires field-effect transistors," ECS Journal of Solid State Science and Technology, vol. 6, no. 9, pp. Q114-Q119, 2017.
[22]
S. Marcinkevičius et al., "Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy," Physical Review B. Condensed Matter and Materials Physics, vol. 94, no. 23, 2016.
[23]
D. Wickramaratne et al., "Iron as a source of efficient Shockley-Read-Hall recombination in GaN," Applied Physics Letters, vol. 109, no. 16, 2016.
[25]
K. Gelzinyte et al., "High spatial uniformity of photoluminescence spectra in semipolar (20(2)over-bar1) plane InGaN/GaN quantum wells," Journal of Applied Physics, vol. 117, no. 2, pp. 023111, 2015.
[27]
S. Marcinkevicius et al., "Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure," Semiconductor Science and Technology, vol. 30, no. 11, 2015.
[29]
S. Marcinkevicius et al., "High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy," Applied Physics Letters, vol. 105, no. 24, pp. 241108, 2014.
[30]
S. Marcinkevicius et al., "Highly polarized photoluminescence and its dynamics in semipolar (20(2)over-bar(1)over-bar) InGaN/GaN quantum well," Applied Physics Letters, vol. 104, no. 11, pp. 111113, 2014.
[31]
N. Meiser, S. Marcinkevicius and V. Pasiskevicius, "Transient behaviour of quantum-dot saturable absorber mirrors at varying excitation fluence," Applied physics. B, Lasers and optics (Print), vol. 116, no. 4, pp. 919-927, 2014.
[32]
S. Marcinkevicius et al., "Carrier dynamics and localization in AlInN/GaN heterostructures," Physica Status Solidi. C, Current topics in solid state physics, vol. 10, no. 5, pp. 853-856, 2013.
[33]
S. Naureen et al., "Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching," Applied Physics Letters, vol. 102, no. 21, pp. 212106, 2013.
[34]
S. Marcinkevičius et al., "Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra," Applied Physics Letters, vol. 103, no. 13, pp. 131116, 2013.
[35]
S. Marcinkevicius et al., "Optical properties of extended and localized states in m-plane InGaN quantum wells," Applied Physics Letters, vol. 102, no. 10, pp. 101102, 2013.
[36]
S. Marcinkevicius et al., "Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells," Applied Physics Letters, vol. 103, no. 11, pp. 111107, 2013.
[37]
V. Liuolia et al., "Near- and far-field optical characterization of InGaN photonic crystal light emitting diodes," Physica Status Solidi. C, Current topics in solid state physics, vol. 9, no. 7, pp. 1664-1666, 2012.
[38]
V. Liuolia et al., "Photoexcited carrier dynamics in AlInN/GaN heterostructures," Applied Physics Letters, vol. 100, no. 24, pp. 242104, 2012.
[39]
A. Pinos et al., "Scanning near-field optical spectroscopy of AlGaN epitaxial layers," Physica Status Solidi. C, Current topics in solid state physics, vol. 9, no. 7, pp. 1617-1620, 2012.
[40]
S. Marcinkevicius et al., "Transient photoreflectance of AlInN/GaN heterostructures," AIP Advances, vol. 2, no. 4, pp. 042148, 2012.
[41]
A. Pinos, S. Marcinkevicius and M. S. Shur, "High current-induced degradation of AlGaN ultraviolet light emitting diodes," Journal of Applied Physics, vol. 109, no. 10, pp. 103108, 2011.
[42]
[43]
A. Sugunan et al., "Synthesis of tetrahedral quasi-type-II CdSe-CdS core-shell quantum dots," Nanotechnology, vol. 22, no. 42, pp. 425202, 2011.
[44]
V. Liuolia et al., "Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy," Applied Physics Letters, vol. 97, no. 15, pp. 151106, 2010.
[45]
V. Liuolia et al., "Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells," Journal of Applied Physics, vol. 108, no. 2, pp. 023101, 2010.
[46]
A. Pinos et al., "Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes," Journal of Applied Physics, vol. 108, no. 9, pp. 093113, 2010.
[47]
S. Kivisto et al., "Pulse dynamics of a passively mode-locked Bi-doped fiber laser," Optics Express, vol. 18, no. 2, pp. 1041-1048, 2010.
[48]
A. Berrier et al., "Accumulated sidewall damage in dry etched photonic crystals," Journal of Vacuum Science & Technology B, vol. 27, no. 4, pp. 1969-1975, 2009.
[51]
A. Pinos et al., "Time-resolved luminescence studies of proton-implanted GaN," Applied Physics Letters, vol. 95, no. 11, 2009.
[52]
S. Gautier et al., "AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas," Journal of Crystal Growth, vol. 310, no. 23, pp. 4927-4931, 2008.
[53]
A. Pinos et al., "Carrier lifetimes in AlGaN quantum wells : electric field and excitonic effects," Journal of Physics D : Applied Physics, vol. 41, no. 15, 2008.
[54]
A. Pinos et al., "Screening dynamics of intrinsic electric field in AlGaN quantum wells," Applied Physics Letters, vol. 92, no. 6, pp. 061907, 2008.
[55]
S. Suomalainen et al., "Semiconductor saturable absorbers with recovery time controlled by lattice mismatch and band-gap engineering," Materials Science & Engineering : B. Solid-state Materials for Advanced Technology, vol. 147, no. 2-3, pp. 156-160, 2008.
[56]
S. Marcinkevicius, A. Gushterov and J. P. Reithmaier, "Transient electromagnetically induced transparency in self-assembled quantum dots," Applied Physics Letters, vol. 92, no. 4, 2008.
[57]
T. Aggerstam et al., "Electron and hole capture cross-sections of Fe acceptors in GaN:Fe epitaxially grown on sapphire," Journal of Electronic Materials, vol. 36, no. 12, pp. 1621-1624, 2007.
[58]
S. Marcinkevicius et al., "Intrinsic electric fields in AlGaN quantum wells," Applied Physics Letters, vol. 90, no. 8, 2007.
[59]
S. Suomalainen et al., "1 µm saturable absorber with recovery time reduced by lattice mismatch," Applied Physics Letters, vol. 89, no. 7, pp. 071112-1-071112-3, 2006.
[60]
S. Marcinkevicius, J. Siegert and Q. X. Zhao, "Carrier spin dynamics in modulation-doped InAs/GaAs quantum dots," Journal of Applied Physics, vol. 100, no. 5, pp. 054310, 2006.
[61]
K. Bertulis et al., "GaBiAs : A material for optoelectronic terahertz devices," Applied Physics Letters, vol. 88, no. 20, 2006.
[62]
J. Siegert et al., "Recombination properties of Si-doped InGaAs/GaAs quantum dots," Nanotechnology, vol. 17, no. 21, pp. 5373-5377, 2006.
[64]
J. Siegert, S. Marcinkevičius and Q. X. Zhao, "Carrier dynamics in modulation-doped InAs/GaAs quantum dots," Physical Review B. Condensed Matter and Materials Physics, vol. 72, no. 8, pp. 085316, 2005.
[65]
H. Lindberg et al., "Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber," Optics Letters, vol. 30, no. 20, pp. 2793-2795, 2005.
[66]
N. Zurauskiene et al., "Optically detected microwave resonance and carrier dynamics in InAs/GaAs quantum dots," Acta Physica Polonica. A, vol. 107, no. 2, pp. 435-439, 2005.
[67]
S. Marcinkevicius et al., "Time-resolved photoluminescence and Raman scattering of InAsSb/InP quantum dots," Applied Physics Letters, vol. 86, no. 18, 2005.
[68]
M. X. Chen et al., "1 micron wavelength photo- and electroluminescence from a conjugated polymer," Applied Physics Letters, vol. 84, no. 18, pp. 3570-3572, 2004.
[69]
P. Pellegrino et al., "Time-resolved analysis of the white photoluminescence from SiO2 films after Si and C coimplantation," Applied Physics Letters, vol. 84, no. 1, pp. 25-27, 2004.
[70]
J. Siegert et al., "Carrier recombination in aligned InAs/GaAs quantum dots grown in strain-relaxed InGaAs layers," Physica Status Solidi. C, Current topics in solid state physics, vol. 0, no. 4, pp. 1213, 2003.
[71]
C. Carmody et al., "Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications," Applied Physics Letters, vol. 82, no. 22, pp. 3913-3915, 2003.
[72]
J. Siegert et al., "Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers," Physica. E, Low-Dimensional systems and nanostructures, vol. 18, no. 4, pp. 541, 2003.
[73]
C. Carmody et al., "Ultrafast carrier trapping and recombination in highly resistive ion implanted InP," Journal of Applied Physics, vol. 94, no. 2, pp. 1074-1078, 2003.
[74]
A. Krotkus et al., "Be-doped low-temperature-grown GaAs material for optoelectronic switches," IEE Proceedings - Optoelectronics, vol. 149, no. 3, pp. 111-115, 2002.
[75]
S. Marcinkevicius et al., "Changes in carrier dynamics induced by proton irradiation in quantum dots," Physica. B, Condensed matter, vol. 314, no. 04-jan, pp. 203-206, 2002.
[76]
S. Marcinkevičius et al., "Changes in luminescence intensities and carrier dynamics induced by proton irradiation in In_xGa_1-xAs/GaAs quantum dots," Physical Review B. Condensed Matter and Materials Physics, vol. 66, no. 23, pp. 235314, 2002.
[77]
R. Leon et al., "Defect states in red-emitting InxAl1-xAs quantum dots," Physical Review B. Condensed Matter and Materials Physics, vol. 66, no. 8, 2002.
[78]
R. Leon et al., "Dislocation-induced spatial ordering of InAs quantum dots : Effects on optical properties," Journal of Applied Physics, vol. 91, no. 9, pp. 5826-5830, 2002.
[79]
R. Leon et al., "Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots," IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 2844-2851, 2002.
[80]
A. Gaarder et al., "Time-resolved micro-photoluminescence studies of deep level distribution in selectively regrown GaInP : Fe and GaAs : Fe," Semiconductor Science and Technology, vol. 17, no. 2, pp. 129-134, 2002.
[82]
A. Gaarder et al., "Dopant distribution in selectively regrown InP : Fe studied by time-resolved photoluminescence," Journal of Crystal Growth, vol. 226, no. 4, pp. 451-457, 2001.
[83]
S. Marcinkevicius, A. Gaarder and R. Leon, "Rapid carrier relaxation by phonon emission in In0.6Ga0.4As/GaAs quantum dots," Physical Review B Condensed Matter, vol. 6411, no. 11, 2001.
[84]
S. Marcinkevicius and R. Leon, "Carrier capture and relaxation in quantum dot structures with different dot densities," Microelectronic Engineering, vol. feb-51, pp. 79-83, 2000.
[85]
S. Marcinkevicius et al., "Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers," Applied Physics Letters, vol. 76, no. 10, pp. 1306-1308, 2000.
[86]
S. Marcinkevicius and R. Leon, "Photoexcited carrier transfer in InGaAs quantum dot structures : Dependence on the dot density," Applied Physics Letters, vol. 76, no. 17, pp. 2406-2408, 2000.
[87]
E. R. Messmer et al., "Properties of semi-insulating GaAs : Fe grown by hydride vapor phase epitaxy," Journal of the Electrochemical Society, vol. 147, no. 8, pp. 3109-3110, 2000.

Conference papers

[88]
R. Yapparov et al., "Engineering of quantum barriers for efficient InGaN quantum well LEDs," in Novel Optical Materials and Applications, NOMA 2022, 2022.
[90]
S. Marcinkevičius et al., "Impact of barrier height on the interwell carrier transport in InGaN/(In)GaN multiple quantum wells," in Optics InfoBase Conference Papers, 2019.
[92]
S. Marcinkevičius et al., "Multimode scanning near-field photoluminescence spectroscopy of InGaN quantum wells," in 2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID), 2018, pp. 93-95.
[93]
S. Marcinkevičius et al., "Scanning near-field optical microscopy of AlGaN epitaxial layers," in UV and Higher Energy Photonics : From Materials to Applications, 2016.
[94]
S. Marcinkevicius et al., "Spatial variations of optical properties of semipolar InGaN quantum wells," in Gallium Nitride Materials and Devices X, 2015.
[95]
S. Marcinkevicius et al., "Optical properties and carrier dynamics in m-plane InGaN quantum wells," in 10th International Conference on Nitride Semiconductors (ICNS), AUG 25-30, 2013, Washington, DC, USA, 2014, pp. 690-693.
[96]
L. Thylén, S. Marcinkevicius and P. Holmström, "Nanophotonics : A tutorial," in Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012, 2012, pp. 224-225.
[97]
J. Puustinen et al., "1.22 µm GaInNAs saturable absorber mirrors with tailored recovery time," in Emerging trends and novel materials in photonics : International Commission for Optics topical meeting, 2010, pp. 200-203.
[98]
A. Pinos and S. Marcinkevicius, "Scanning near-field optical spectroscopy of AlGaN-based light emitting diodes," in GALLIUM NITRIDE MATERIALS AND DEVICES V, 2010.
[99]
Q. Wang et al., "Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection," in GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009, pp. 721627-1-721627-9.
[100]
A. Berrier et al., "Impact of dry-etching induced damage in InP-based photonic crystals," in PHOTONIC CRYSTAL MATERIALS AND DEVICES VIII, 2008, pp. U9890-U9890.
[101]
S. Marcinkevicius, A. Gusterov and J. P. Reithmaier, "Transient electromagnetically induced transparency in InGaAs quantum dots," in 2008 Conference On Lasers And Electro-Optics & Quantum Electronics And Laser Science Conference : Vols 1-9, 2008, pp. 3597-3598.
[102]
M. Guina et al., "Semiconductor saturable absorbers with recovery time controlled by lattice mismatch," in Optical Components and Materials IV, 2007, pp. 64690P-1-64690P-7.
[103]
M. Guina et al., "Semiconductor saturable absorbers with recovery time controlled through growth conditions," in Solid State Lasers XVI : Technology and Devices, 2007, pp. 645113-1-645113-7.
[104]
S. Marcinkevičius and J. Siegert, "Carrier capture and relaxation in modulation doped InAs quantum dots," in International Quantum Electronics Conference 2005; Tokyo; Japan, 2005, pp. 454-455.
[105]
M. N. Akram et al., "Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 mm MQW structures with different barrier compositions," in 31st European Conference on Optical Communications (ECOC 2005), 2005, 2005, pp. 297-298.
[106]
N. M. Akram et al., "Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 mu;m MQW structures with different barrier compositions," in Optical Communication, 2005. ECOC 2005. 31st European Conference on, 2005, pp. 297-298.
[107]
S. Marcinkevicius and Q. Zhao, "Spin relaxation in charged InAs/GaAs quantum dots," in COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, pp. 443-446.
[108]
N. Zurauskiene et al., "Semiconductor nanostructures for infrared applications," in Functional Nanomaterials For Optoelectronics And Other Applications, 2004, pp. 99-108.
[109]
S. Marcinkevicius et al., "Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation," in ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, 2004, pp. 299-309.
[110]
R. Campi, S. Marcinkevicius and G. Landgren, "Studies on the carrier transport in InGaAlAdP/InGaAsP quantum well structures emitting at 1.3 μm," in Conference on Lasers and Electro-Optics Europe - Technical Digest, 2000, p. 141.

Chapters in books

[111]
S. Marcinkevicius, "Dynamics of carrier transfer into In(Ga)As self-assembled quantum dots," in Self-Assembled Quantum Dots, Zhiming M. Wang Ed., 1st ed. : Springer, 2008, pp. 129-164.
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2024-06-17 00:06:02