Home Assignments

First part of the course:

Name

Problem Number

Anne-Lise

3.4, 4.1, 5.5

Bejan

3.3, 5.3, 6.1

Cristine

2.3, 3.2, 5.1

Tomas

*, 2.5, 5.2

Toon

15.2 (a, b, c, d)

Second part of the course

Name

Problem Number

Anne-Lise

***, 11.1, 12.5

Bejan

¶ ¶ 9.3, 10.1, 13.1

Cristine

**, 12.3, 14.4

Tomas

9.2, 11.4, 12.2

Toon

9.5, 10.5, 11.3

* Considering that ionization energy of donors and acceptors in Si is about 50 meV, estimate the fraction of ionized impurities at room temperature.

** Gain in direct bandgap excitonic system is shown to be impossible. What makes Er+3 ion gain possible where the discrete level structure of inner levels resemble exciton levels?

*** What is the difference between amplified spontaneous emission and stimulated emission? How can these two be distinguished in an experiment?