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Home Assignments
First part of the course:
|
Name |
Problem Number |
|
Anne-Lise |
3.4, 4.1, 5.5 |
|
Bejan |
3.3, 5.3, 6.1 |
|
Cristine |
2.3, 3.2, 5.1 |
|
Tomas |
*, 2.5, 5.2 |
|
Toon |
15.2 (a, b, c, d) |
Second part of the course
|
Name |
Problem Number |
|
Anne-Lise |
***, 11.1, 12.5 |
|
Bejan |
9.3, 10.1, 13.1 |
|
Cristine |
**, 12.3, 14.4 |
|
Tomas |
9.2, 11.4, 12.2 |
|
Toon |
9.5, 10.5, 11.3 |
* Considering that ionization energy of donors and acceptors in Si is about 50 meV, estimate the fraction of ionized impurities at room temperature.
** Gain in direct bandgap excitonic system is shown to be impossible. What makes Er+3 ion gain possible where the discrete level structure of inner levels resemble exciton levels?
*** What is the difference between amplified spontaneous emission and stimulated emission? How can these two be distinguished in an experiment?