KTH develops new computer memory for IBM
KTH is helping IBM to develop the computer memory of the future – MRAM. This is economical on energy, super-fast, and with very large storage capacity; in other words just what all types of PC´s, mobile phones and other portable electronic devices will need.
Vladislav Korenivski, Professor at the KTH Dept. of Applied Physics, has landed a most prestigious contract between KTH and computer giant IBM.
“His research team are world leaders in high-frequency measurement techniques, and IBM wants KTH to assist them in finding the best combination of architecture and material that will yield the very fastest MRAM circuit”, says the magazine Ny Teknik.
MRAM is the abbreviation for Magnetoresistive Random Access Memory. An MRAM stores data in the form of magnetic fields, created by the electrons in the material, as they spin around their own axes. This technology is referred to as spinntronics.
MRAMs do have a number of advantages, viz:
- The memory retains its stored data even if the current supply is lost;
- The memory can store huge amounts of data; it is also extremely fast;
- A computer with an MRAM will start immediately;
- This memory is not affected by radiation; hence it may be used in spatial research as well as for military research applications.